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    140N30P Search Results

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    140N30P Price and Stock

    Littelfuse Inc IXFK140N30P

    MOSFET N-CH 300V 140A TO264AA
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    DigiKey IXFK140N30P Tube 421 1
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    RS IXFK140N30P Bulk 8 Weeks 25
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    Littelfuse Inc IXFN140N30P

    MOSFET N-CH 300V 110A SOT-227B
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    DigiKey IXFN140N30P Tube 122 1
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    RS IXFN140N30P Bulk 8 Weeks 10
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    Littelfuse Inc IXTK140N30P

    MOSFET N-CH 300V 140A TO264
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    DigiKey IXTK140N30P Tube 14 300
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    Newark IXTK140N30P Bulk 300
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    Littelfuse Inc IXFX140N30P

    MOSFET N-CH 300V 140A PLUS247-3
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    DigiKey IXFX140N30P Tube 1
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    Newark IXFX140N30P Bulk 300
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    Littelfuse Inc IXFR140N30P

    MOSFET N-CH 300V 70A ISOPLUS247
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    DigiKey IXFR140N30P Tube 1
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    RS IXFR140N30P Bulk 8 Weeks 30
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    140N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFR140N30

    Abstract: No abstract text available
    Text: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode


    Original     		PDF 140N30P ISOPLUS247TM 405B2 IXFR140N30

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 70 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 140N30P ISOPLUS247TM IXFR140N30P

    ixfn 140n30p

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 140N30P OT-227 E153432 IXFN140N30P ixfn 140n30p

    ixfn 140n30p

    Abstract: sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16
    Text: Preliminary Technical Information PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 140N30P 405B2 ixfn 140n30p sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16

    4525G

    Abstract: 140N30P
    Text: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSM VGSM Transient


    Original     		PDF 140N30P O-264 PLUS247 140N30P 4525G

    140n30p

    Abstract: PLUS247 TO-264 weight IXfk 75 N 50
    Text: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSM VGSM


    Original     		PDF 140N30P 140n30p PLUS247 TO-264 weight IXfk 75 N 50

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p