B2716
Abstract: m2716 FDIP24W M271616
Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
AI00784B
B2716
FDIP24W
M271616
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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B2716
Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
FDIP24W
m2716 dip
M2716* eprom
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AM2716
Abstract: circuit diagram of m2716 m2716 1N914 FDIP24W
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
AM2716
circuit diagram of m2716
1N914
FDIP24W
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IEC825
Abstract: MAX3656 MAX3656ETG SLT3120-DN
Text: 19-2790; Rev 0; 3/03 155Mbps to 2.5Gbps Burst-Mode Laser Driver Features ♦ Multirate Operation from 155Mbps to 2.5Gbps ♦ Burst Enable/Disable Delay <2ns ♦ Burst On-Time of 576ns to Infinity The MAX3656 is packaged in a small, 24-pin, 4mm ✕ 4mm thin QFN package and consumes only 132mW
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155Mbps
576ns
MAX3656
24-pin,
132mW
IEC825
MAX3656ETG
SLT3120-DN
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED 1 INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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B2716
Abstract: B-2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
B-2716
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C3174
Abstract: McKenzie transistor c3174 ADSP2187L ADSP-2187L AD1847 ADSP-2100 ADSP-2181 8K24
Text: a FEATURES PERFORMANCE 19 ns Instruction Cycle Time @ 3.3 Volts, 52 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in Every Instruction Cycle Multifunction Instructions
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ADSP-2100
Two27)
ADSP-2187LKST-160
ADSP-2187LBST-160
ADSP-2187LKST-210
ADSP-2187LBST-210
100-Lead
C3174
McKenzie
transistor c3174
ADSP2187L
ADSP-2187L
AD1847
ADSP-2181
8K24
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SSOT23-6
Abstract: FAN5622 FAN5624UMPX fan5626 1910K FAN5624 FAN5626LX led driver SOT23 6pin boost
Text: FAN5622 / FAN5624 / FAN5626 Linear LED Drivers with Single-Wire Digital Interface Features Description Family of Three Linear Current-Sink LED Drivers that Support 2, 4, or 6 LED Outputs Current Sink Driver for Each LED Output: – 30mA Maximum Output Current
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FAN5622
FAN5624
FAN5626
FAN5622,
FAN5624,
FAN5626
FAN5622/24/26
SSOT23-6
FAN5624UMPX
1910K
FAN5626LX
led driver SOT23 6pin boost
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flash card 68 pin
Abstract: Sandisk TSOP hitachi single chip SANDISK NAND sandisk Nand flash part number Hitachi DSA00197 FLASH TRANSLATION LAYER FTL
Text: Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 2 April 1998 HITACHI CARD FAMILY Aufbau/end HELIO.April 06.11.1998 19:08 Uhr Seite 3 Hitachi Card Family Flash-based memory cards are used in a variety of compact devices, including notebook computers, personal organisers and
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150MB
D-85622
flash card 68 pin
Sandisk TSOP
hitachi single chip
SANDISK NAND
sandisk Nand flash part number
Hitachi DSA00197
FLASH TRANSLATION LAYER FTL
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Untitled
Abstract: No abstract text available
Text: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5364000
SM5364000
16MByte
16-megabyte
72-pin,
60/70/80ns
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27512-3
Abstract: EPROM AM27256 AM27512 AM27S12 am92256 27512 AM27256 150 Line Interactive ups with circuit diagram A15C IN3064
Text: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available
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Am27512
250ns
525mW
132mW
28-pin
Am2764,
Am27256
Am27128
Am92256-256K
27512-3
EPROM AM27256
AM27S12
am92256
27512
AM27256 150
Line Interactive ups with circuit diagram
A15C
IN3064
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SM2716
Abstract: No abstract text available
Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
SM2716
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Untitled
Abstract: No abstract text available
Text: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED
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2048x
525mW
132mW
M2716-1
350ns
M2716
450ns
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AM27512
Abstract: AM27S12 AM2764 A15C IN3064 am27256 am27512a
Text: Am27512 Am 27512 65,536 x 8-Bit UV Erasable PROM PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Fast access time — as low as 250ns Programming voltage: 12.5V Sow Power consum ption - Active: 525mW - Standby: 132mW Single 5V pow er supply ± 1 0 % V c c supply tolerance available
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Am27512
250ns
525mW
132mW
28-pin
Am2764,
Am27256
Am27128
Am92256-256K
AM27S12
AM2764
A15C
IN3064
am27512a
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VDR 14D
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM68U1000BL/L-L 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION >Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 132nW(max.)L-Version : 33pW(max.)LL-Version Operating : 132mW(max.)
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KM68U1000BL/L-L
128Kx8
100ns
132nW
132mW
KM68U10OOBLG/BLG-L:
525mil)
KM68U1000BLT/BLT-L
KM68U1000BLR/BLR-L:
KM68U1000BLVBL-L
VDR 14D
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THM365120AS80
Abstract: tc51256t THM365120 TC51256
Text: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required
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THM365120AS-70,
TKM365120AS
TC514256AJ
TC51256T
THM365120AS
THM365120AS-70
THM365120AS-80
THM365120AS-10
100ns
130ns
THM365120AS80
THM365120
TC51256
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vmos
Abstract: S4716 S4264 vmos to S68332 S4216B S6831B
Text: AMI ADVANCED PRODUCT DESCRIPTION S4716 16,384 BIT 2048 X 8 UV ERASABLE VMOS EPROM Features General Description □ Single + 5 Volt P ow er Supply □ F ast A ccess Time: 250ns Maximum □ Pin Compatible w ith AM I’s 16K, 32K and 64K ROMs □ Low Pow er D issipation
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S4716
250ns
525mA
132mW
S4716
S4216B
S6831B
S68332
vmos
S4264
vmos to
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MO-23
Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
Text: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as
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IHM36204QAS/ASG-60/70/80
THM362040A
TC514400ASJ
TC511000BFT
130ns
THM362040AS/ASG-60/70/80
THM362040AS/ASG
THM362040AS/ASG-60
TC514400ASJ
TC511000BFT
MO-23
THM362040ASG-60
MO23
CDQ2
THM362040ASG
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Untitled
Abstract: No abstract text available
Text: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A
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MB85346A-60/-70/-80
MB85346A
MB814400A
MB81C1000A
72-pad
MSS-72P-P11
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MB85323A-70
Abstract: No abstract text available
Text: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A
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MB85323A-60/-70/-80
MB85323A
MB814400A
MB81C1000A
a72-pad
MSS-72P-P37
MB85323A-70
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ite 8892
Abstract: MB8532 MB85323A-70
Text: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four
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5323A
MB85323-A
MB814400A
MB81C1000A
MB85323A
72-pad
MSS-72P-P37
ite 8892
MB8532
MB85323A-70
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