b1a12
Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit
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PC133/100
M390S2950MTU
M390S2950MTU
128Mx72
128Mx4,
128Mx4
400mil
18bits
b1a12
M390S2950MTU-C1H
M390S2950MTU-C1L
M390S2950MTU-C75
PC133 registered reference design
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DDR200
Abstract: DDR266A DDR266B M312L2923MT0
Text: M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.2 Jan. 2002 Rev. 0.2 Jan. 2002 M312L2923MT0 184pin 1U Registered DDR SDRAM MODULE
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M312L2923MT0
184pin
128Mx72
64Mx72
64Mx8
72-bit
DDR266A
DDR200
DDR266A
DDR266B
M312L2923MT0
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M390S2858DTU
Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked
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M390S2858DTU
PC133/PC100
M390S2858DTU
128Mx72
128Mx4,
128Mx4
400mil
18-bits
M390S2858DTU-C1H
M390S2858DTU-C1L
M390S2858DTU-C7A
M390S2858DTU-C7C
10D4L
PC133 registered reference design
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M377S2953MT3
Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit
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PC100
M377S2953MT3
M377S2953MT3
128Mx72
64Mx8,
64Mx8
400mil
18bits
M377S2953MT3-C1H
M377S2953MT3-C1L
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DDR200
Abstract: DDR266A DDR266B
Text: M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72(64Mx72*2 bank based on 64Mx8 DDR SDRAM) Unbuffered 184pin DIMM 72-bit ECC/Parity Revision 0.3 May. 2002 Rev. 0.3 May. 2002 M381L2923MTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M381L2923MTL
184pin
128Mx72
64Mx72
64Mx8
72-bit
DDR266A
DDR200
DDR266A
DDR266B
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k3661
Abstract: DDR200 DDR266A DDR266B HYMD212G726K4-H HYMD212G726K4-K HYMD212G726K4-L
Text: HYMD212G726K4-K/H/L 128Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD212G726K4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 128Mx72 high-speed memory arrays. HynixHYMD212G726K4-K/H/L series
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HYMD212G726K4-K/H/L
128Mx72
HYMD212G726K4-K/H/L
184-pin
HynixHYMD212G726K4-K/H/L
128Mx4
400mil
184pin
k3661
DDR200
DDR266A
DDR266B
HYMD212G726K4-H
HYMD212G726K4-K
HYMD212G726K4-L
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M312L2920MT0
Abstract: No abstract text available
Text: M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE 1GB DDR SDRAM MODULE 128Mx72 based on 128Mx4 DDR SDRAM Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 Rev. 0.0 Oct. 2001 M312L2920MT0 184pin 1U Registered DDR SDRAM MODULE Revision History
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M312L2920MT0
184pin
128Mx72
128Mx4
72-bit
M312L2920MT0
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M312L5628MT0
Abstract: DDR266A
Text: M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE 2GB DDR SDRAM MODULE 256Mx72 (128Mx72 *2)based on 128Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.0 October. 2001 - -1 - Rev. 0.0 Oct. 2001 M312L5628MT0 184pin 1U Registered DDR SDRAM MODULE
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M312L5628MT0
184pin
256Mx72
128Mx72)
128Mx4
72-bit
M312L5628MT0
DDR266A
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2808 eeprom
Abstract: No abstract text available
Text: 128M x 72 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 72A0TsSEM8G19TWN 168 Pin 128Mx72 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The Module is a 128Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 16Mx8x4 (TSOP)
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PC100/133
72A0TsSEM8G19TWN
128Mx72
16Mx8x4
256x8
PC100/133
DS781-72A0T
2808 eeprom
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DS1082-72A0R
Abstract: 1gb pc133 SDRAM DIMM pc100 power supply unit circuit diagram
Text: 128M x 72 Bit Registered PC100/133 SDRAM DIMM Registered PC100/133 SYNCHRONOUS DRAM DIMM 72A0RxSTM8G24TWR 168 Pin 128Mx72 SDRAM DIMM Registered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 128Mx72 bit, 24 chip, 168 Pin
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PC100/133
72A0RxSTM8G24TWR
128Mx72
DS1082-72A0R
DS1082-72A0R
1gb pc133 SDRAM DIMM
pc100 power supply unit circuit diagram
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2808 eeprom
Abstract: No abstract text available
Text: 128M x 72 Bit Registered PC100/133 SDRAM DIMM Registered PC100/133 SYNCHRONOUS DRAM DIMM 72A0TxSTM8G13KWI 168 Pin 128Mx72 SDRAM DIMM Registered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 128Mx72 bit, 13 chip, 168 Pin
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PC100/133
72A0TxSTM8G13KWI
128Mx72
DS1129-72A0T
2808 eeprom
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR2 SDRam 128Mx72-BGA 3D2D8G72UB3369 DDR2 Synchronous Dynamic Ram 8Gbit DDR2 SDRam organized as 128Mx72, based on 128Mx16 MODULE Pin Assignment Top View BGA 208 - (11x19 - Pitch 1.00mm) (TOP VIEW - VIEWED BY TRANSPARENCY) 11 10 9 8 7 6 5 4
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128Mx72-BGA
3D2D8G72UB3369
128Mx72,
128Mx16
11x19
128Mx72
MMXX00000000XXX
3DFP-0369-REV
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PC133 SDRAM registered DIMM 512MB hynix
Abstract: HYM72V12C736K4 HYM72V12C736K4-H HYM72V12C736LK4-H RA12
Text: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736 L K4 Series DESCRIPTION The HYM72V12C736K4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in 8pin TSSOP package on a
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128Mx72
PC133
64Mx4
HYM72V12C736
HYM72V12C736K4
128Mx72bits
64Mx4bits
400mil
54pin
168pin
PC133 SDRAM registered DIMM 512MB hynix
HYM72V12C736K4-H
HYM72V12C736LK4-H
RA12
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PC133 SDRAM registered DIMM 512MB hynix
Abstract: No abstract text available
Text: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in
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128Mx72
PC133
64Mx4
HYM72V12C736B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
PC133 SDRAM registered DIMM 512MB hynix
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD512G726A L 8-M/K/H/L DESCRIPTION Preliminary Hynix HYMD512G726A(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD512G726A(L)8M/K/H/L series consists of eighteen 64Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD512G726A(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.
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128Mx72
HYMD512G726A
184-pin
64Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD212G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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128Mx72
HYMD212G726A
184-pin
128Mx4
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Unbuffered DDR SDRAM DIMM HYMD512726A L 8-M/K/H/L DESCRIPTION Preliminary Hynix HYMD512726A(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD512726A(L)8-M/
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128Mx72
HYMD512726A
184-pin
64Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD512G726 L 8M-K/H/L DESCRIPTION Preliminary Hynix HYMD512G726(L)8M-K/H/L series is Low Profile registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix
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128Mx72
HYMD512G726
184-pin
64Mx8
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in
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128Mx72
PC100
64Mx4
HYM72V12C756B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
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M383L2828
Abstract: No abstract text available
Text: M383L2828DT1 1GB DDR SDRAM MODULE 128Mx72 (64Mx72 *2)based on 64Mx4 DDR SDRAM) Registered 184pin DIMM 72-bit ECC/Parity Revision 0.1 May. 2002 - -1 - Rev. 0.1 May. 2002 M383L2828DT1 Revision History Revision 0.0 (Mar. 2002) 1.First release for internal usage.
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M383L2828DT1
128Mx72
64Mx72)
64Mx4
184pin
72-bit
M383L2828DT1
M383L2828
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Untitled
Abstract: No abstract text available
Text: SU5722845D8E6CL August 26, 2004 Ordering Information Part Numbers Description Module Speed SM5722845D8E6CL 128Mx72 1GB , DDR, 184-pin DIMM, Registered, ECC, 64Mx4 Based, DDR333B, 52.07mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5722845D8E6CL 128Mx72 (1GB), DDR, 184-pin DIMM, Registered, ECC,
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SU5722845D8E6CL
SM5722845D8E6CL
SB5722845D8E6CL
128Mx72
184-pin
64Mx4
DDR333B,
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Untitled
Abstract: No abstract text available
Text: IBM13M13734BCA 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A : R eg: : DIMM CAS Latency : f CK ; Clock Frequency ; Clock Cycle IW : | Clock Access Tim e j Units ;
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IBM13M13734BCA
168-Pin
128Mx72
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Untitled
Abstract: No abstract text available
Text: =• = IBM13M13734BCA Preliminary 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A . | Reg- | DIMM CAS Latency
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IBM13M13734BCA
168-Pin
128Mx72
100MHz
133MHz
13M13734BCA
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Untitled
Abstract: No abstract text available
Text: IBM13M13734BCA 128M x 72 2-B an k R eg istered /B u ffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM • Performance: i -260 CL=2 ! -360 CL=3 I -360 CL=2 ji Units: :. :.:. :.:.
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IBM13M13734BCA
168-Pin
128Mx72
66/100MHz
PC100
13M13734BCA
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