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Micro Commercial Components MSJPF11N65-BP MOSFET N-CH 650V 11A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSJPF11N65-BP	Tube	8,441		1	1 $2.96 10 $2.96 100 $2.96 1000 $0.9899 10000 $0.9	Buy Now
Micro Commercial Components MSJP11N65A-BP N-CHANNEL MOSFET,TO-220
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DigiKey	MSJP11N65A-BP	Tube	4,971		1	1 $2.18 10 $2.18 100 $2.18 1000 $0.80076 10000 $0.80076	Buy Now
STMicroelectronics STB11N65M5 MOSFET N CH 650V 9A D2PAK
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DigiKey	STB11N65M5	Digi-Reel	2,839		1	1 $3.06 10 $1.983 100 $3.06 1000 $1.11034 10000 $1.11034	Buy Now
	STB11N65M5	Cut Tape	2,839		1	1 $3.06 10 $1.983 100 $3.06 1000 $1.11034 10000 $1.11034	Buy Now
	STB11N65M5	Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.02642 10000 $1.02642	Buy Now
Mouser Electronics	STB11N65M5		915			1 $2.72 10 $1.84 100 $1.3 1000 $0.978 10000 $0.939	Buy Now
Newark	STB11N65M5	Cut Tape	555		1	1 $2.41 10 $2.03 100 $1.65 1000 $1.24 10000 $1.24	Buy Now
STMicroelectronics	STB11N65M5		915		1	1 $2.67 10 $1.8 100 $1.27 1000 $1.05 10000 $1.05	Buy Now
TME	STB11N65M5		938		1	1 $1.67 10 $1.47 100 $1.24 1000 $1.24 10000 $1.24	Buy Now

Avnet Silica	STB11N65M5		2,000	15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	STB11N65M5	Cut Tape	813			1 $1.86 10 $1.54 100 $1.23 1000 $1.03 10000 $1.03	Buy Now
EBV Elektronik	STB11N65M5			15 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FCP11N60F MOSFET N-CH 600V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP11N60F	Tube	2,555		1	1 $3.45 10 $3.45 100 $3.45 1000 $1.47188 10000 $1.47188	Buy Now
Mouser Electronics	FCP11N60F		5,608			1 $3.21 10 $2.52 100 $1.6 1000 $1.47 10000 $1.43	Buy Now
Ameya Holding Limited	FCP11N60F		1,016			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	FCP11N60F				1,000	1 - 10 - 100 - 1000 $1.47 10000 $1.47	Buy Now
Avnet Silica	FCP11N60F			18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	FCP11N60F		700	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCP11N60F		45,116			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	FCP11N60F		550		1	1 - 10 - 100 $2.75 1000 $2.54 10000 $2.54	Buy Now
STMicroelectronics STF11N60DM2 MOSFET N-CH 600V 10A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF11N60DM2	Tube	1,915		1	1 $2.62 10 $2.62 100 $2.62 1000 $0.85902 10000 $0.76188	Buy Now
Newark	STF11N60DM2	Bulk	828		1	1 $1.42 10 $1.09 100 $0.988 1000 $0.906 10000 $0.885	Buy Now
STMicroelectronics	STF11N60DM2				1	1 $1.69 10 $1.13 100 $0.91 1000 $0.82 10000 $0.82	Buy Now
Avnet Silica	STF11N60DM2		1,300	17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF11N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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11N6 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
11N60S5		Infineon Technologies	Cool MOS Power Transistor		Original	PDF

11N6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,	Original	PDF	11N60K-MT 11N60K-MT QW-R502-A99
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,	Original	PDF	11N60K-MT 11N60K-MT O-220F2 QW-R502-A99
11N60CFD Abstract: SPW11N60CFD 11N60C Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	PDF	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
11N65M5 Abstract: 11n65 STB11N65M5 Text: 11N65M5, 11N65M5, 11N65M5, 11N65M5, 11N65M5 N-channel 650 V, 0.43 Ω typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features TAB TAB Order codes VDSS @ TJmax RDS on max 2	Original	PDF	STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 O-220FP, O-220 STB11N65M5 STD11N65M5 STF11N65M5 11N65M5 11n65
3c90 ferrite Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460 Text: BCD Semi Ltd Co. AP1661 Demo Board Manual AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Design procedure 4. Schematics of the Demo Board 5. PCB Layout 6. Photo View of the Demo Board 7. BOM 8. Test Result for Typical Performance and Characteristics	Original	PDF	AP1661 3c90 ferrite 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 F1 11N60 1N4148 3C90 MUR460
ntc 5d-9 Abstract: analog delay line schematic 11n65c3 AP3101 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431 Text: BCD Semi Ltd Co. AP3101 Demo Board Part Number: DB-AP3101-120W Seriers Number: V1.0-001 Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. PCB Dimensions 6. Photo View of the Demo Board 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL	Original	PDF	AP3101 DB-AP3101-120W 5V-265V 200mV ntc 5d-9 analog delay line schematic 11n65c3 pc817c APPLICATION CIRCUITS FR107 SMD pq32 24v Advanced Analog Circuits B20100On AZ431
11N60S5 Abstract: SPI11N60S5 Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1	Original	PDF	SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5
11N60S5 equivalent Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 Text: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	PDF	SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
Untitled Abstract: No abstract text available Text: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability	Original	PDF	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3
SPW11N60S5 Abstract: 06161L 11N60S5 equivalent 11N60S5 Text: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38	Original	PDF	SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5
11n60c3 Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	PDF	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
11N60CFD Abstract: SPI11N60CFD SPP11N60CFD Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD
11n60cfd Abstract: SPW11N60CFD 11N6 Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6

11N60S5 Abstract: SPW11N60S5 Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5
STR 6750 Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout Text: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board	Original	PDF	AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	PDF	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3
11n60cfd Abstract: No abstract text available Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd
Untitled Abstract: No abstract text available Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618
Untitled Abstract: No abstract text available Text: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3
AR1010 Abstract: No abstract text available Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010
Untitled Abstract: No abstract text available Text: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	PDF	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1
SPD06S60 Abstract: 11N60C3 transistor 11n60c3 Text: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	PDF	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3
Untitled Abstract: No abstract text available Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPW11N60S5 P-TO247 Q67040-S4239 11N60S5

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11N6 Price and Stock

Micro Commercial Components MSJPF11N65-BP

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STMicroelectronics STB11N65M5

onsemi FCP11N60F

STMicroelectronics STF11N60DM2

11N6 Datasheets (1)

11N6 Datasheets Context Search

Untitled

Untitled

11N60CFD

11N60C3

11N65M5

3c90 ferrite

ntc 5d-9

11N60S5

11N60S5 equivalent

Untitled

SPW11N60S5

11n60c3

11N60CFD

11n60cfd

11N60S5

STR 6750

11n60c3

11n60cfd

Untitled

Untitled

AR1010

Untitled

SPD06S60

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