1000 volt mosfet
Abstract: ISS 355 L100B11 5026
Text: +,*+3 5 250$1&( 32:(5026)(76 SML L100B11 VDS ID RDSON = = = 1000 Volt 11 Amp 1 : SML L100B10 VDS ID RDSON 1000 Volt 10 Amp 1.1 : The SML L100B11 and SML L100B10 represent outstanding value for all your power applications that demand top performance MOSFETs.
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L100B11
L100B10
L100B11
1000 volt mosfet
ISS 355
5026
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800w power amplifier circuit diagram
Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
Text: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager
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APT9502
56MHz
1000Watt,
56MHz
300VDC
U-134,
APT9303.
800w power amplifier circuit diagram
1200w power amplifier circuit diagram
amplifier circuit diagram class D 1000w
1000w power amplifier circuit diagram
1000 watts amplifier schematic diagram with part
1200w power amplifier
amplifier circuit diagram 1000 watt
300w mosfet power amplifier circuit diagram
1200w amplifier
"Good RF Construction Practices and Techniques"
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1000w power amplifier circuit diagram
Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply
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APT9701
12MHz
O-247
300VDC
AN749,
DL110,
1000w power amplifier circuit diagram
800w power amplifier circuit diagram
1200w power amplifier circuit diagram
amplifier circuit diagram class D 1000w
500 watt mosfet power amplifier circuit diagram
27.12MHz power amplifier
APT9701
1000 watt ferrite transformer
ar164
hf 800w power Amplifier diagram
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MTC3N100E
Abstract: SHD218414 SHD218414A SHD218414B
Text: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E
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SHD218414
SHD218414A
SHD218414B
MTC3N100E
MTC3N100E
SHD218414
SHD218414A
SHD218414B
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
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SHD218414
SHD218414A
SHD218414B
MTC3N100E
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 3.0 Ohm, 3A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to MTC3N100E MAXIMUM RATINGS
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SHD218414
SHD218414A
SHD218414B
MTC3N100E
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IRFAG50
Abstract: SHD218508 SHD218508A SHD218508B shd2188
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching
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SHD218508
SHD218508A
SHD218508B
SHD2188/A/B
IRFAG50
IRFAG50
SHD218508
SHD218508A
SHD218508B
shd2188
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Untitled
Abstract: No abstract text available
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
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SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
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shd2188
Abstract: sensitron
Text: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 5.6A MOSFET Hermetic Ceramic Package Fast Switching Low RDS on
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SHD2188/A/B
SHD218508
SHD218508A
SHD218508B
IRFAG50
shd2188
sensitron
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527 39a
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD226408
O-257
250mA
SHD226408
527 39a
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1000 volt mosfet
Abstract: shd226801
Text: SENSITRON SEMICONDUCTOR SHD226801 TECHNICAL DATA DATA SHEET 4341, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 4 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD226801
O-257
1000 volt mosfet
shd226801
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SHD226408
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE
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SHD226408
O-257
SHD226408
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1000 volt mosfet
Abstract: SHD225613 SHD2258
Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series
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SHD225613
SHD2258
12N100
1000 volt mosfet
SHD225613
SHD2258
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SHD225509
Abstract: 4964 diode
Text: SENSITRON SEMICONDUCTOR SHD225509 SHDC225509 SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 6A, 2 Ohm, MOSFET • Isolated Hermetic Metal Package • Fast intrinsic Rectifier • Low RDS on • Ceramic Seals with Glidcop leads (SHDG225509)
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SHD225509
SHDC225509
SHDG225509
SHDG225509)
SHD225509
4964 diode
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shd225617
Abstract: 1000 volt mosfet
Text: SENSITRON SEMICONDUCTOR SHD225617 TECHNICAL DATA DATA SHEET 451, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.2 Ohm, 10A MOSFET Isolated Hermetic Metal Package Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225617
12Aasheet
shd225617
1000 volt mosfet
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shd2258
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series
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SHD2258
SHD225613
12N100
SHD225613
O-254
O-254
shd2258
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225508 TECHNICAL DATA DATA SHEET 229, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 6.0A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225508
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shd225508
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225508 TECHNICAL DATA DATA SHEET 229, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 2.0 Ohm, 6.0A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225508
SHD225508
O-254
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226208 TECHNICAL DATA DATA SHEET 835, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD226208
O-257
250mA
SHD226208
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mosfet amp ic
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226208 TECHNICAL DATA DATA SHEET 835, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD226208
O-257
250mA
50Vdc,
1000Vdc,
800Vdc,
mosfet amp ic
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smd diode 39a
Abstract: N CHANNEL MOSFET 10A 1000V IRFNG40
Text: Provisional Data Sheet No. PD-9.1555 HEXFET POWER MOSFET IRFNG40 N-CHANNEL Ω HEXFET 1000 Volt, 3.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFNG40
smd diode 39a
N CHANNEL MOSFET 10A 1000V
IRFNG40
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benq
Abstract: SDF2N100
Text: JfaMtxon PRODUCT DEVICES.INC. CÂTÂI ' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER „ SYMBOL Drain-source Volt. l Drain-Gate Voltage 1000 Vdc 1000 Vdc ±20 Vdc 2 Ade 8 75 A W 0.6 W/°C -55 TO +150 1.7 300 "C/W VDSS VDGR (RfiS-l.OMn) (1)
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SDF2N100
MIL-S-19500
benq
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DIODE S3V 70
Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Text: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFMG50D
IRFMG50U
O-254
mil-8-19s00
I-404
DIODE S3V 70
DIODE S3V 52
MOSFET 6A irfmg50
IRFMG50
LSE 0149
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710a
Abstract: IRFMG40 IRFMG40D IRFMG40U
Text: Data Sheet No. PD-9.710A INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG4Q N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRFMG40
IRFMG40D
IRFMG40U
O-254
MIL-S-19500
710a
IRFMG40
IRFMG40U
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