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    02N60S5 Search Results

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    02N60S5 Price and Stock

    Infineon Technologies AG SPB02N60S5ATMA1

    MOSFET N-CH 600V 1.8A TO263-3
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    DigiKey SPB02N60S5ATMA1 Cut Tape 87 1
    • 1 $0.75
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    SPB02N60S5ATMA1 Reel 1,000
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    • 10000 $0.405
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    Infineon Technologies AG SPN02N60S5

    MOSFET N-CH 600V 400MA SOT223-4
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    DigiKey SPN02N60S5 Reel 1,000
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    • 1000 $0.45376
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    Rochester Electronics LLC SPP02N60S5

    N-CHANNEL POWER MOSFET
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    DigiKey SPP02N60S5 Bulk 577
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    Infineon Technologies AG SPP02N60S5HKSA1

    MOSFET N-CH 600V 1.8A TO220-3
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    DigiKey SPP02N60S5HKSA1 Tube 500
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    • 1000 $0.55328
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    Rochester Electronics LLC SPU02N60S5BKMA1

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey SPU02N60S5BKMA1 Bulk 434
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    Find more 02N60S5 price and stock on Findchips.com

    02N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252

    SPB02N60S5

    Abstract: No abstract text available
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB02N60S5 P-TO263-3-2 SPB02N60S5 Q67040-S4212 02N60S5

    02N60

    Abstract: SPN02N60S5 02N60S5 GPS05560 VPS05163
    Text: 02N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207 02N60 02N60S5 GPS05560 VPS05163

    SPD02N60S5

    Abstract: 02N60S5 P-TO252 SPU02N60S5
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5

    02N60S5

    Abstract: SPB02N60S5 SPP02N60S5
    Text: 02N60S5 02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 02N60S5 SPB02N60S5

    02N60S5

    Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5

    02N60S5

    Abstract: SPN02N60S5 VPS05163
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 0.4 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance 3


    Original     		PDF SPN02N60S5 OT-223 Q67040-S4207 VPS05163 02N60S5 02N60S5 SPN02N60S5 VPS05163

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Q67040-S4181

    Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 Q67040-S4181 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2

    SPP02N60S5

    Abstract: k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5
    Text: 02N60S5 02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 SPPx5N60S5/SPBx5N60S5 Q67040-S4181 02N60S5 SPP02N60S5 k 117 02n60s5 smd diode 44a SPB02N60S5 SPBX5N60S5 02N60 Transistor 02N60S5

    Untitled

    Abstract: No abstract text available
    Text: 02N60S5 Preliminary data D,2/4 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity 4 3 G,1 2 S,3 1 VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN02N60S5 VPS05163 SPN02N60S5 OT-223 02N60S5 Q67040-S4207

    02N60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    02N60S5

    Abstract: 02N60 SPD02N60S5 SPU02N60S5
    Text: 02N60S5 02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5

    SPN02N60S5

    Abstract: No abstract text available
    Text: 02N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 3 Ω 0.4


    Original     		PDF SPN02N60S5 OT-223 VPS05163 Q67040-S4207 02N60S5 SPN02N60S5

    SPB02N60S5

    Abstract: SPP02N60S5 02N60S5 siemens 230 98 O
    Text: 02N60S5 02N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 SPP02N60S5 P-TO220-3-1 P-TO263-3-2 02N60S5 Q67040-S4181 SPB02N60S5 02N60S5 siemens 230 98 O

    SPB02N60S5

    Abstract: No abstract text available
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB02N60S5 PG-TO263 SPB02N60S5 Q67040-S4212 02N60S5

    02N60S5

    Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 02N60S5 smd 0306 package 02N60

    SPP02N60S5

    Abstract: No abstract text available
    Text: 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 P-TO220-3-1 PG-TO220-3-1 SPP02N60S5 PG-TO220-3-1 Q67040-S4181 02N60S5

    Untitled

    Abstract: No abstract text available
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5

    02n60s5

    Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
    Text: 02N60S5 02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42

    02n60

    Abstract: SPD02N60S5 SPU02N60S5
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

    SPB02N60S5

    Abstract: SPP02N60S5 02N60 02N60S5 02n60s
    Text: 02N60S5 02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP02N60S5 SPB02N60S5 SPPx5N60S5/SPBx5N60S5 P-TO220-3-1 02N60S5 Q67040-S4181 P-TO263-3-2 SPP02N60S5 SPB02N60S5 02N60 02N60S5 02n60s

    SPB02N60S5

    Abstract: SPP02N60S5
    Text: 02N60S5 02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4181 Q67040-S4212 SPB02N60S5