FU-12AP-N
Abstract: 316AP
Text: bem fiE T 001fl3Sb MITSUBISHI OPTICAL DEVICES 3T7 FU-12AP-N/FU-316AP APD MODULE FOR LONG WAVELENGTH BAND FEATURES DESCRIPTION FU-12AP-N and containing highly FU-316AP reliable are detector module • High-speed response (fc = 1 G H z ) Ge • Low operating voltage
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001fl3Sb
FU-12AP-N/FU-316AP
FU-12AP-N
FU-316AP
316AP
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2 Wavelength Laser Diode
Abstract: diode S3 S3 diode laser coupler 1.55um 3db
Text: • 001fl3bs 3TT ■ MITSUBISHI OPTICAL DEVICES FU-52SDM-F1/S1/F3/S3 WDM MODULE WITH SINGLEMODE FIBER PIGTAIL (1.3 pm LD AND 1.55 Mm PD) DESCRIPTION FEATURES WDM module FU-52SDM series incorporate a 1.3um • Incorporate a 1.3|im laser, an InGaAs photodiode
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001fl3bs
FU-52SDM-F1/S1/F3/S3
FU-52SDM
2 Wavelength Laser Diode
diode S3
S3 diode
laser coupler 1.55um 3db
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FU-622SLD
Abstract: fu 024 n FU-622 FU622SLD2M3 b34 diode
Text: • 001fl3üfl b34 ■ MITSUBISHI OPTICALDEVICES FU-622SLD-2M7/2M3/2M6/2M4 1.48 um PUMP LO MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-622SLD series 1480nm laser diode modules are designed as optical pumping sources • Laser Diode specifically optimized fo r pump laser
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001fl3
FU-622SLD-2M7/2M3/2M6/2M4
FU-622SLD
1480nm
48urn
fu 024 n
FU-622
FU622SLD2M3
b34 diode
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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Untitled
Abstract: No abstract text available
Text: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/
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576-Word
40-Bit
HB56A140B/SB
HM514400AS)
72-pin
HB56A140B/
ns/70
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Untitled
Abstract: No abstract text available
Text: SIE MM^baOB 001ÖÖ57 ISS • H I T 2 D HM5116100 Series Preliminary 16,777,216-Word x 1-Bit Dynamic Random Access Memory ■ H IT A C H I/ d e s c r ip t io n LO G IC/ARR AYS/flEM HM5116100J Senes The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word x
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HM5116100
216-Word
HM5116100J
TTP-20D
TTP-20DR
54aax
787l0
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sampa
Abstract: AY-3-0214 top octave generator ic
Text: FU J I TS U M I C R O E L E C T R O N I C S 374^2 47E D M ay 1991 Edition 1.0 DATA S H E E T : 0 0 1 Ô 37 1 S « F H I _ FUJITSU MB86460A MODEM WITH INTERNAL VOICE-BAND FILTERS CMOS MODEM CIRCUIT WITH INTERNAL VOICE-BAND FILTERS FOR CORDLESS TELEPHONES The MB86460 MSK Minimum Shift Keying modem IC contains a 1200-band MSK
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MB86460A
MB86460
1200-band
48-LEAD
FPT-48-M02)
sampa
AY-3-0214 top octave generator ic
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Untitled
Abstract: No abstract text available
Text: H M 5 1 1 0 0 1 A S e r i e s - 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 5 1 1 0 0 1 A P S e r ie s The Hitachi H M 511001A series is a C M OS dynamic RAM organized 1,048,576word x 1-bit. H M 511001A has realized higher density, higher performance and vari
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576-Word
11001A
576word
18-pin
20-pin
3DDP16C
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Untitled
Abstract: No abstract text available
Text: HB56D51236 Series 524,288-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56D51236B is a 512k x 36 dynamic RAM module, mounted 16 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package and 8 pieces of 256k-bit DRAM (HM51256CP) sealed in PLCC package. An outline of the HB56D51236B is
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HB56D51236
288-Word
36-Bit
HB56D51236B
HM514256JP)
256k-bit
HM51256CP)
72-pin
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Untitled
Abstract: No abstract text available
Text: i4inba03 HB56D25632 Series- IHITS T44 T-4& -Z3-17 262,144-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION DOIIDIR ■ PIN OUT The HB56D25632B is a 256k x 32 dynamic RAM module, mounted 8 pieces of 1 Mbit DRAM HM514256JP sealed in SOJ package. An outline of the HB56D25632B is 72-pin sin
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i4inba03
HB56D25632
-Z3-17
144-Word
32-Bit
HB56D25632B
HM514256JP)
72-pin
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Untitled
Abstract: No abstract text available
Text: HM538122 Series Preliminary 131,072 x 8-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM 538122JP Series The HM538122 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM
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HM538122
538122JP
128k-word
256-word
3DCP40D
CP-40D)
787l0
TTP-20D
TTP-20DR
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM 51E D MM 1 b 5Q 3 OOlflS?«? fl73 • H I T S HM514400A Series HM514400AL Series Low P ow er Version HM514400ASL Series Super Low Pow er Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/AU/ALSJ Series
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HM514400A
HM514400AL
HM514400ASL
576-Word
HM514400AJ/AU/ALSJ
20-pin
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Untitled
Abstract: No abstract text available
Text: bl03B01 001037=1 37b M ic r o c h ip 24LCS21A IK 2.5V Dual Mode I2C Serial EEPROM FEATURES PACKAGE TYPES PDIP • Single supply with operation down to 2.5V • Completely implements DDC1™/DDC2™ interface for monitor identification, including recovery to DDC1
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bl03B01
24LCS21A
1D3201
DS21161C-page
24LCS21A
24LCS21
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C4351
Abstract: ic 74 hc 10
Text: New D a ta . C D 54/74H C 4351, C D 54/74H C T4351 C D 54/74H C 4352, C D 54/74H C T4352 C D 54/74H C 4353, C D 54/74H C T4353 HARRIS SECTOR File N um b er 27E D 2145 4303271 ODlflaSb 2 Analog Multiplexers/Demultiplexers With Latch Type Features: • Wide analog in p u t voltage range: ± 5 V max,
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54/74H
T4351
T4352
T4353
054/74H
C4351
ic 74 hc 10
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Untitled
Abstract: No abstract text available
Text: CM O S SRAM KM6465B 16,384 WORD x 4 Bit CMOS Static RAM FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6465B-12 :140mA (max.) KM6465B-15 :130mA (max.) KM6465B-20 :120mA (max.)
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KM6465B
KM6465B-12
140mA
KM6465B-15
130mA
KM6465B-20
120mA
KM6465B-2S
110mA
KM6465BP:
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marking 683
Abstract: No abstract text available
Text: Wfiol HEWLETT mL/iM P A C K A R D 0 .8 -6 GHz 3 V Downconverter Technical Data IAM-91563 F ea tu res • +0 dBm Input IP3 at 1.9 GHz Surface M ount Package SOT-363 S C -70 • Single +3V Supply • 8.5 dB SSB N oise Figure at 1.9 GHz • 9.0 dB Conversion Gain at
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IAM-91563
OT-363
IAM-91563
OT-363
OT-143
5965-1330E
5965-9973E
4447S
marking 683
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DD CONVERTER marking code T92
Abstract: DS2151Q DS2151QN DS2153Q TR62411
Text: D S 2 15 1Q a D A L L A S DS2151Q T1 Single—Chip Transceiver s e m ic o n d u c to r FEATURES PIN ASSIGNM ENT • Complete DS1/ISDN-PRI transceiver functionality Functional Blocks • Line interface can handle both long and short haul trunks • 32-bit or 128-bit jitter attenuator
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DS2151Q
32-bit
128-bit
SLC-96R
supp0010413
2bmi30
DS2151QT1
DD CONVERTER marking code T92
DS2151Q
DS2151QN
DS2153Q
TR62411
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Untitled
Abstract: No abstract text available
Text: FDC37B80X 1 ADVANCE INFORMATION STANDARD MICROSYSTEMS CORPORATION 100 Pin Enhanced Super I/O Controller FEATURES - 2 Mbps, 1 Mbps, 500 Kbps, 300 Kbps, 250 Kbps Data Rates Programmable Precompensation Modes Keyboard Controller 8042 Software Compatible 8 Bit Microcomputer
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FDC37B80X
NS16C550A
16-Byte
230kis
FDC37B80x
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2N7080
Abstract: No abstract text available
Text: T em ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 -9 .5 TO-2S4AA Hermetic Package o rO |h D S G P-C hannel M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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2n7080
P-37012â
2N7080
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dc815
Abstract: No abstract text available
Text: F U J I TS U MICROELECTRONICS 374^2 47E D 0016325 2 • F U I "T - ^ -O S FUJITSU October 1991 DATA SHEET■ F5CB Series Piezoelectric Filters SAW-BPF, 700 MHz to 1000 MHz The F5 series are wide bandpass filters for use in the 700 MHz to 1000 MHz range. The F5 series uses a single lithium tantalate piezoelectric crystal LiTa03 that has a
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LiTa03)
LiTa03
IlS33b
dc815
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/HEH S1E J> MM1bED3 DGlRlfib 577 IHIT2 HB56D136B/S Series-1,048,576-Word x 36-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56D136B/SB/BR/SBR/BS/SBS is a 1M x 36 dy namic RAM module, mounted 8 pieces of 4 Mbit DRAM
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HB56D136B/S
576-Word
36-Bit
HB56D136B/SB/BR/SBR/BS/SBS
HM514400JP/AJ)
HM511000JP)
HB56D136B/SB/BR/SBR)
HM511000ATS)
HB56D136SB/
HB56D136B/SB/BR/SBR/BS/SBS
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Untitled
Abstract: No abstract text available
Text: HM514266 Series 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM 514266AP Series The Hitachi H M 514266A is a C M O S dynamic RAM organized 262,144-word x 4-bit. H M 514266A has realized higher density, higher performance and various func
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HM514266
144-Word
514266AP
14266A
20-pin
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR FEATURES D S 2 1 4 1 A T1 Controller PIN ASSIGNMENT • DS1/ISDN-PRI framing transceiver TCLK [ 1 TSER [ 2 • Frames to D4, ESF, and SLC-96 formats TCHCLK [ 3 TPOS [ 4 • Parallel control port ^ 40 ] VDD 39 ] TSYNC 38 3 TUNK 37 ] TLCLK
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SLC-96
DS2141A
DS2141AQ
Shmi30
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Untitled
Abstract: No abstract text available
Text: HB56A240 Series 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • PINOUT ■ DESCRIPTION The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a 72-pin single in-line package. Therefore, the HB56A240B/
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HB56A240
152-Word
40-Bit
HB56A240B/SB
HM514400AS)
72-pin
HB56A240B/
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