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    ZENER DIODE MARKING 25J Search Results

    ZENER DIODE MARKING 25J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    ZENER DIODE MARKING 25J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Zener diode smd marking WE

    Abstract: am 5890 smd marking cj4 smd marking ce5 Zener diode smd marking code am Ce1 marking diode CE5 marking Zener diode smd marking code 14 SMD cf5 smd marking ck2
    Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,


    Original     		PDF CMHZ5221B CMHZ5267B 500mW, OD-123 ELL-2KS400 CMHZ5242B 31-Aug-2010 Zener diode smd marking WE am 5890 smd marking cj4 smd marking ce5 Zener diode smd marking code am Ce1 marking diode CE5 marking Zener diode smd marking code 14 SMD cf5 smd marking ck2

    smd marking ce5

    Abstract: Diode smd code sm Zener diode smd marking WE SMD cf5 SMD MARKING CODE CM5 Zener diode smd marking code am smd marking cj4 diode SMD CODE sm 17 smd diode marking sm 34 smd zener
    Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,


    Original     		PDF CMHZ5221B CMHZ5267B 500mW, OD-123 CMHZ5225B OD-123 CMHZ5225B CMPD2004S smd marking ce5 Diode smd code sm Zener diode smd marking WE SMD cf5 SMD MARKING CODE CM5 Zener diode smd marking code am smd marking cj4 diode SMD CODE sm 17 smd diode marking sm 34 smd zener

    zener diode n8

    Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
    Text: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,


    Original     		PDF CMOZ47L 250mW, OD-523 CMOZ22L CMOZ24L CMOZ27L CMOZ30L CMOZ33L CMOZ36L CMOZ39L zener diode n8 Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L

    Zener diode MARKING H5

    Abstract: marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5
    Text: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for


    Original     		PDF CMOZ43V OD-523 300mW) ELECTRCMOZ20V CMOZ22V CMOZ24V CMOZ27V CMOZ30V CMOZ33V CMOZ36V Zener diode MARKING H5 marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5

    CMHZ5265B

    Abstract: CMHZ5228B CMHZ5229B marking code CJ4 CMHZ5221B CMHZ5222B CMHZ5223B CMHZ5224B CMHZ5225B CMHZ5226B
    Text: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,


    Original     		PDF CMHZ5221B CMHZ5267B 500mW, CMHZ5221B OD-123 25-June CMHZ5265B CMHZ5228B CMHZ5229B marking code CJ4 CMHZ5222B CMHZ5223B CMHZ5224B CMHZ5225B CMHZ5226B

    cll5238b

    Abstract: diode zener marking 58 CLL5221B CLL5222B CLL5223B CLL5224B CLL5225B CLL5226B CLL5227B CLL5228B
    Text: Central CLL5221B THRU CLL5267B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL5221B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial,


    Original     		PDF CLL5221B CLL5267B 500mW, CLL5221B OD-80 200mA CLL5261B CLL5262B CLL5263B CLL5264B cll5238b diode zener marking 58 CLL5222B CLL5223B CLL5224B CLL5225B CLL5226B CLL5227B CLL5228B

    CMOZ13V

    Abstract: No abstract text available
    Text: CMOZ2V4C THRU CMOZ43VC SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 2% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4C Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed


    Original     		PDF CMOZ43VC OD-523 300mW) CMOZ20VC CMOZ22VC CMOZ24VC CMOZ27VC CMOZ30VC CMOZ33VC CMOZ36VC CMOZ13V

    w11nk90z

    Abstract: STW11NK90Z W11NK90 st mosfet JESD97
    Text: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized


    Original     		PDF STW11NK90Z O-247 w11nk90z STW11NK90Z W11NK90 st mosfet JESD97

    Untitled

    Abstract: No abstract text available
    Text: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized


    Original     		PDF STW11NK90Z O-247

    P12NK60

    Abstract: F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z
    Text: STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A ID PW 35 W 3 3 • Extremely high dv/dt capability


    Original     		PDF STP12NK60Z STF12NK60Z O-220 /TO-220FP O-220FP O-220 P12NK60 F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z

    Untitled

    Abstract: No abstract text available
    Text: STN3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw STN3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability


    Original     		PDF STN3N45K3 OT-223 OT-223 AM01476v1 DocID024888

    Untitled

    Abstract: No abstract text available
    Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z


    Original     		PDF STP12NK60Z STF12NK60Z, STW12NK60Z O-220, O-220FP, O-247 STF12NK60Z O-220

    w12nk60z

    Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
    Text: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z


    Original     		PDF STP12NK60Z STF12NK60Z, STW12NK60Z O-220, O-220FP, O-247 STF12NK60Z O-220 w12nk60z P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60

    d2536

    Abstract: 2SD2536
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536 d2536 2SD2536

    Untitled

    Abstract: No abstract text available
    Text: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)


    Original     		PDF 2SD2248

    D2248

    Abstract: darlington transistor with built-in temperature c 2SD2248
    Text: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max)


    Original     		PDF 2SD2248 D2248 darlington transistor with built-in temperature c 2SD2248

    Untitled

    Abstract: No abstract text available
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536

    Untitled

    Abstract: No abstract text available
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536

    d2536

    Abstract: 2SD2536
    Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)


    Original     		PDF 2SD2536 d2536 2SD2536

    D2088 TRANSISTOR

    Abstract: transistor D2088 D2088 2SD2088
    Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2088 D2088 TRANSISTOR transistor D2088 D2088 2SD2088

    D2088 TRANSISTOR

    Abstract: D2088 Transistor D2088 2SD2088
    Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2088 D2088 TRANSISTOR D2088 Transistor D2088 2SD2088

    D2695 TRANSISTOR

    Abstract: D2695 2SD2695
    Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2695 D2695 TRANSISTOR D2695 2SD2695

    D2088 TRANSISTOR

    Abstract: D2088 transistor D2088 d2088 5-x
    Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2088 D2088 TRANSISTOR D2088 transistor D2088 d2088 5-x

    D2088 TRANSISTOR

    Abstract: D2088 Transistor D2088 2SD2088
    Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2088 D2088 TRANSISTOR D2088 Transistor D2088 2SD2088