1N914WS
Abstract: No abstract text available
Text: 1N914WS Small Signal Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WQ Top View Marking Code: "WQ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current
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1N914WS
OD-323
OD-323
1N914WS
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1N914WS
Abstract: No abstract text available
Text: 1N914WS Small Signal Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WQ Top View Marking Code: "WQ" Simplified outline SOD-323 and symbol . Absolute Maximum Ratings Ta=25OC Parameter Symbol Limits Unit Repetitive reverse voltage VRRM 100 V Average rectified forward current
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1N914WS
OD-323
OD-323
1N914WS
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1N914WS
Abstract: No abstract text available
Text: 1N914WS Small Signal Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WQ Top View Marking Code: "WQ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current
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1N914WS
OD-323
OD-323
1N914WS
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1N914WS
Abstract: diode marking wq WQ marking
Text: 1N914WS Small Signal Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WQ Top View Marking Code: "WQ" Simplified outline SOD-323 and symbol . Absolute Maximum Ratings Ta=25OC Parameter Symbol Limits Unit Repetitive reverse voltage VRRM 100 V Average rectified forward current
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1N914WS
OD-323
OD-323
1N914WS
diode marking wq
WQ marking
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Untitled
Abstract: No abstract text available
Text: 1N914WS Small Signal Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WQ Top View Marking Code: "WQ" Simplified outline SOD-323 and symbol . Absolute Maximum Ratings Ta=25OC Parameter Symbol Limits Unit Repetitive reverse voltage VRRM 100 V Average rectified forward current
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1N914WS
OD-323
OD-323
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ts 4141
Abstract: 1N914WS
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N914WS SOD-323 PLASTIC PCAKAGE Marking 1N914WS=WQ with cathode band Small Signal Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION
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1N914WS
OD-323
1N914WS
C-120
Rev170507E
ts 4141
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N914WS SOD-323 PLASTIC PCAKAGE Marking 1N914WS=WQ with cathode band Small Signal Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION
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1N914WS
OD-323
1N914WS
C-120
Rev170507E
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SAFFB
Abstract: SAFFB1G SAFFB1G57KE0F00 murata SAW WQ marking
Text: SAW FILTER FOR GPS Murata part number : SAFFB1G57KE0F00 Package Dimensions Specification Specification Item -30 to 85°C 25±2°C typ. 1.10±0.05 1 WQ Dot Marking(0.2) Insertion Loss (1573.92 to 1576.92MHz ) (0.15) 2-0.25±0.03 (3) (0.075) 5-0.25±0.03
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SAFFB1G57KE0F00
42MHz
92MHz
SAFFB
SAFFB1G
SAFFB1G57KE0F00
murata SAW
WQ marking
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5264
Abstract: No abstract text available
Text: fasis fasis Double tier blocks with spring clamp connection, type WKF WKF 4 E /35. fine stranded EN 60 947-7-1 UL ratings CSA ratings Width Approvals 0.13 - 4 mm 2 solid V 0.13 - 6 mm A 2 field/factory wiring Wire strip length 6 mm wq 11 mm Type Double tier block
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10pole
5264
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what is technical report
Abstract: TR17-1 BGB707L7ESD marking swp 9
Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 3. 3 G Hz-3 .8 GHz Wi MAX Applicati on s Technic al Rep ort T R 171 Revision: Rev. 1.0 Date: 16. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es Edition 16. December 2009
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BGB707L
BGB707L7
BGB707L7ESD
TR171,
TR171
what is technical report
TR17-1
marking swp 9
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RF LNA 10 GHz
Abstract: SDMB BGB707L7ESD marking swp 9
Text: B GB 707L 7ESD BGB707L 7ESD L N A Circui t with lo wQ I nduc to rs fo r 2. 3 G Hz-2 .7 GHz W L A N / Wi M A X / S D M B A p p l i c a t i o n s Technic al Rep ort T R 170 Revision: Rev. 1.0 Date: 14. December 2009 Author: Dr. Chih-I Lin RF and Protecti on Devi c es
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BGB707L
BGB707L7
TR170,
TR170
BGB707L7ESD
RF LNA 10 GHz
SDMB
marking swp 9
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Diode marking MFW
Abstract: MFW diode 95rr DIODE S3K ZW 13 diode YQB marking Marking jx Diode MFW B651 WQ marking
Text: SPB80N10L!M SIPMOSTMPower-Transistor Product Summary Feature RQQ w RetI••J RU Ie YQ b S 2H mfssj q VDS J smfshj rj syrtij Qtln hQj {j q qNupSWTNT 6<: ´H tuj wfyn sl yj ruj wfyzwj F{fqfshmj wfyj i ivP
t wfyj i@M fqtlj s2kwj j fhhtwin sl yt NJ H ;679>27276
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SPB80N10L
Diode marking MFW
MFW diode
95rr
DIODE S3K
ZW 13 diode
YQB marking
Marking jx
Diode MFW
B651
WQ marking
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1.14.002
Abstract: No abstract text available
Text: Data Sheet 1.14.002.-MICON 5 Short-travel Keyswitches , , , Data Sheet MICON 5 Short-travel Keyswitches and Accessories , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,
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WQ marking
Abstract: No abstract text available
Text: fasis fasis Double tier terminals with spring clamp connection, type WKF WKF 4 E/35 fine stranded EN 60 947-7-1 UL ratings CSA ratings Width Approvals 0.13 - 4 mm 2 WKF 4 E/VB/35 solid V 0.13 - 6 mm 2 A 800 V/8 kV/3 32 fine stranded 2 0.13 - 4 mm solid 2 0,13 - 6 mm
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10pole
WQ marking
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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OD-80
OD123/323
OT-23,
OT346
OT-323,
OT-416
OT-223,
OT-89
OT-143,
OT-363
smd code book
transistor SMD P1f
marking code W16 SMD Transistor
TRANSISTOR SMD MARKING CODE jg
smd transistor WW1
Transistor SMD a7s
DIODE SMD L4W
smd diode zener code pj 78
smd transistor wv4
Motorola transistor smd marking codes
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Untitled
Abstract: No abstract text available
Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C13 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
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BZT52C2V0
BZT52C39
BZT52C10
BZT52C13
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
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marking code zener diode wl
Abstract: diode marking code W4
Text: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C13 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
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BZT52C2V4
BZT52C39
BZT52C10
BZT52C13
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
marking code zener diode wl
diode marking code W4
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wm 294
Abstract: No abstract text available
Text: BZT52C2V0S - BZT52C39S Lead-free SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S
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BZT52C2V0S
BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
wm 294
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MARKING WjS
Abstract: No abstract text available
Text: SIEMENS BCR 135 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor fî^lO kjQ , /^=47kQ C CHA0 7 H 4 Type Marking Ordering Code Pin Configuration BCR 135 WJs Q62702-C2257 1= B 2=E
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OCR Scan
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PDF
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Q62702-C2257
OT-23
40m-base
Jun-18-1997
MARKING WjS
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Untitled
Abstract: No abstract text available
Text: BCR 192W PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=22k£2, R2=47k£2 c FI □ ill Type Marking Ordering Code Pin Confic uration BCR 192W WPs 1= B Q62702-C2282 Package 2= E
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OCR Scan
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Q62702-C2282
OT-323
ov-27
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Untitled
Abstract: No abstract text available
Text: BCR 183W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R-| = '\0kQ, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183W WMs Q62702-C2276 1= B Package 2= E 3=C SOT-323
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OCR Scan
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PDF
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Q62702-C2276
OT-323
Nov-27-1996
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HN3C13F
Abstract: No abstract text available
Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C13F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.8 Including Two Devices in SM6 Super Mini Type with 6 Leads - 1 SYMBOL VCBO VCEO Ve b o ic Ib Pc* Tj MARKING
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HN3C13F
HN3C13F
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Q62702-S217
Abstract: bss296
Text: SIEMENS BSS 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Pin 1 Pin 2 D G Type BSS 296 Vds 100 V Type BSS 296 Ordering Code Q62702-S217 0.8 A ffDS(on) 0.8 Û Pin 3 Package Marking TO-92 SS 296
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OCR Scan
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Q62702-S217
E6296
BSS296
Q62702-S217
bss296
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Untitled
Abstract: No abstract text available
Text: SIEMENS B S S 192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type VDS b BSS 192 -240 V -0.15 A Type BSS 192 Ordering Code Q62702-S634 %S(on) 20 Q. Package Marking SOT-89 KB Tape and Reel Information
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OT-89
Q62702-S634
E6327
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