W2D SOT23
Abstract: diode w2d transistor w2d marking CODE W2D marking w2d sot23 w2d MC 68 H 705 part no w2d 48 A114 A115
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
353/SC
r14525
MC74VHC1G126/D
W2D SOT23
diode w2d
transistor w2d
marking CODE W2D
marking w2d
sot23 w2d
MC 68 H 705
part no w2d 48
A114
A115
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Untitled
Abstract: No abstract text available
Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
r14525
MC74VHC1G126/D
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A114
Abstract: A115 C101 JESD22 MC74VHC1G126 diode w2d marking w2d a MC 68 H 705
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
353/SC
r14525
MC74VHC1G126/D
A114
A115
C101
JESD22
diode w2d
marking w2d a
MC 68 H 705
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diode w2d
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
r14525
MC74VHC1G126/D
diode w2d
marking w2d
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W2D SOT23
Abstract: transistor w2d part no w2d 48 sot23 w2d marking w2d marking code 10 sot23 A114 A115 C101 JESD22
Text: MC74VHC1G126 Noninverting 3−State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3−state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
SC-88A
OT-353/SC-70
MC74VHC1G126/D
W2D SOT23
transistor w2d
part no w2d 48
sot23 w2d
marking w2d
marking code 10 sot23
A114
A115
C101
JESD22
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w2d sot-23
Abstract: No abstract text available
Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
r14525
MC74VHC1G126/D
w2d sot-23
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74VHC1G126
Abstract: VHC1G126 transistor w2d w2d sot-23 diode w2d A114 A115 C101 JESD22 MC74VHC1G126
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
353/SC
r14525
74VHC1G126
VHC1G126
transistor w2d
w2d sot-23
diode w2d
A114
A115
C101
JESD22
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Axialventilatoren
Abstract: w1g250hh
Text: 37778-7-8811 • KO-07/07-3,25’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut
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KO-07/07-3
D-74673
D-78112
D-84030
Axialventilatoren
w1g250hh
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marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
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Untitled
Abstract: No abstract text available
Text: MC74VHC1G126 Product Preview Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
MC74VHC1G126
r14525
MC74VHC1G126/D
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w2d 98
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
AS5SP256K36DQ
w2d 98
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SSRAM
Abstract: AS5SP256K36
Text: COTS PEM SSRAM AS5SP256K36 • 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 99 100 80 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC VDD 13 68 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21
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AS5SP256K36
220mA
180mA
140mA
120mA
110mA
100mA
35oc/w
275mA
250mA
SSRAM
AS5SP256K36
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Axial fans
Abstract: No abstract text available
Text: 37779-7-8811 • KO-08/07-10,8’ Printed in Germany Axial fans version 07 Axial fans ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen
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KO-08/07-10
D-74673
D-78112
D-84030
Axial fans
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Untitled
Abstract: No abstract text available
Text: COTS PEM SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit
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AS5SP256K36DQ
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AS5SP256K36DQ
Abstract: transistor w2d 850C
Text: CO TS PEM COTS SSRAM AS5SP256K36DQ 81 82 84 83 87 85 86 89 88 91 90 92 95 93 94 96 97 98 100 9.0Mb, 256K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect 99 A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc.
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AS5SP256K36DQ
AS5SP256K36DQ
transistor w2d
850C
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SSRAM
Abstract: AS5SP512K36
Text: SSRAM AS5SP512K36 Plastic Encapsulated Microcircuit 18Mb, 512K x 36, Synchronous SRAM Pipeline Burst, Single Cycle Deselect FEATURES • Synchronous Operation in relation to the input Clock
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AS5SP512K36
165mA,
SSRAM
AS5SP512K36
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 93 95 94 96 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8
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AS5SP512K18
250mA
290mA
220mA
270mA
185mA
240mA
120mA
200mA
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SSRAM
Abstract: AS5SP128K36
Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode
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133Mhz
AS5SP128K36
A95mA
SSRAM
AS5SP128K36
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MS-026D
Abstract: transistor w2a transistor w2d diode w2d 850C W2D 83
Text: SSRAM AS5SP512K18DQ A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Austin Semiconductor, Inc. Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 CONTROL BLOCK GW\ AS5SP512K18DQ Rev. 2.0 09/05 81 82 84 83 85 87 86 89 88 91
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AS5SP512K18DQ
-400C
AS5SP512K18DQ-30IT
AS5SP512K18DQ-35IT
AS5SP512K18DQ-40IT
512Kx18,
1050C)
MS-026D
transistor w2a
transistor w2d
diode w2d
850C
W2D 83
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AS5SP512K36DQ
Abstract: No abstract text available
Text: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88
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AS5SP512K36DQ
AS5SP512K36DQ
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Untitled
Abstract: No abstract text available
Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0
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AS5SP256K36DQ
MS026-D/BHA
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SSRAM
Abstract: AS5SP512K18
Text: SSRAM AS5SP512K18 A A CE1\ CE2 NC NC BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 81 82 84 83 87 85 86 89 88 91 90 92 3 78 4 77 5 76 NC NC 6 75 7 74 DQb DQb 8 73 9 72 VSSQ
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AS5SP512K18
200M2
250mA
290mA
220mA
270mA
185mA
240mA
120mA
200mA
SSRAM
AS5SP512K18
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SSRAM
Abstract: AS5SP128K32
Text: SSRAM 81 84 82 83 85 87 86 89 88 91 90 92 93 95 96 94 97 100 1 80 DQc DQc VDDQ VSSQ 2 79 3 78 4 77 5 76 DQc DQc 6 75 7 74 DQc DQc 8 73 9 72 VSSQ VDDQ 10 71 11 70 DQc 12 69 DQc NC 13 68 VDD 15 NC VSS DQd 16 65 17 64 18 63 DQd 19 62 VDDQ VSSQ 20 61 21 60 VSSQ
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AS5SP128K32
SSRAM
AS5SP128K32
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transistor w2d
Abstract: transistor w2a 1050C 850C
Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array
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AS5SP512K36DQ
MS026-D/BHA
transistor w2d
transistor w2a
1050C
850C
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