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    Nexperia PESD2CANFD24V-QBZ

    ESD Protection Diodes / TVS Diodes PESD2CANFD24V-QB/SOT8015/DFN11
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD24V-QBZ 8,988
    • 1 $0.28
    • 10 $0.191
    • 100 $0.092
    • 1000 $0.09
    • 10000 $0.056
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    Nexperia PESD2CANFD36VQB-QZ

    ESD Protection Diodes / TVS Diodes SOT8015 AUTOMOTIVE LOW SP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD36VQB-QZ 4,900
    • 1 $0.4
    • 10 $0.242
    • 100 $0.099
    • 1000 $0.084
    • 10000 $0.064
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    Nexperia PESD2CANFD27V-QBZ

    ESD Protection Diodes / TVS Diodes PESD2CANFD27V-QB/SOT8015/DFN11
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD27V-QBZ 4,556
    • 1 $0.39
    • 10 $0.242
    • 100 $0.104
    • 1000 $0.096
    • 10000 $0.059
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    Nexperia PESD2CANFD24VQB-QZ

    ESD Protection Diodes / TVS Diodes DIODE-ESD SOT8015/DFN1110D-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD24VQB-QZ 2,900
    • 1 $0.32
    • 10 $0.218
    • 100 $0.103
    • 1000 $0.092
    • 10000 $0.059
    		Buy Now

    Nexperia PESD2CANFD27VQB-QZ

    ESD Protection Diodes / TVS Diodes DIODE-ESD SOT8015/DFN1110D-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PESD2CANFD27VQB-QZ
    • 1 $0.46
    • 10 $0.318
    • 100 $0.11
    • 1000 $0.084
    • 10000 $0.066
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    VQB 71 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TAG 600

    Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
    Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 BUZ 355 N channel Enhancement mode Avalanche-rated Pint Type VDS ID ^DS(on) Package BUZ 355 800V 6A 1.50 TO-218AA Pin 2 Pin 3 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		PDF O-218AA

    BF420

    Abstract: BF421 BF422 BF423 T-31-23 BF422 transistor
    Text: BF420 _ JA_ BF422 PHILIP S I N T E R N AT I ONAL SbE ]> • 711DÖEL DDMSlSb 121 H P H I N SILICON EPITAXIAL TRANSISTORS T -3 ^ 2 3 N-P-N transistors in plastic TO-92 envelope primarily intended for class-B video output stages in


    OCR Scan     		PDF BF420 BF422 BF421 BF423. T-31-23 BF420 7Z77427 BF423 BF422 transistor

    491 marking transistor

    Abstract: 2SC4317
    Text: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain • N F = l.ld B , |S2lel2= 13dB f=lGH z M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4317 SC-59 MI192 491 marking transistor 2SC4317

    TL 431 SO8

    Abstract: 2SD203 SD203DC P3NF
    Text: m SâE D TELEDYNE COMPONENTS ÖTlTbGd Ü0ûti37â &_m SD200, SD201 SD202, SD203 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE LATERAL D-MOS FETs ORDERING INFORMATION SD203DC SD202DC SD200DC SD2Q1DC T O -5 2 ,4 Lead Ptcg. SD200DC/R SD201DC/R SD202DC/R SD203DC/R


    OCR Scan     		PDF SD200, SD201 SD202, SD203 SD203DC SD202DC SD200DC SD200DC/R SD201DC/R SD202DC/R TL 431 SO8 2SD203 P3NF

    vqb 71

    Abstract: 074I sem 304 SD50G1
    Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package


    OCR Scan     		PDF SD5000CHP SD5000J SD500QN SD5000, SD5001, SD5002 SD50CHCHP SD5001J SD5002CH« SD5Q02M vqb 71 074I sem 304 SD50G1

    BD131

    Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
    Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.


    OCR Scan     		PDF BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132

    D147D

    Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
    Text: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC


    OCR Scan     		PDF C520D D147D C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24

    vqb 71

    Abstract: No abstract text available
    Text: M A X IM U M R ATIN G S Symbol Value Unit Collector-Emitter Voltage v CEO 20 Vdc Collector-Base Voltage v CBO 25 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Rating Collector Current — Continuous ic 50 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C


    OCR Scan     		PDF D103b23 vqb 71

    MRF5711LT1

    Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as


    OCR Scan     		PDF O-226AA MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MPS571 MRF571 MRF5711LT1 MBR571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1

    Untitled

    Abstract: No abstract text available
    Text: t e l e d y n e eòe c o m p o n e n t s m D 000^ 44? a i i T t a a 1 SD5 1 0 0 , SD5 1 0 1 SEMICONDUCTOR _ ~7Z & 7 - / / ' N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sorted Chips In Waffle Pack SD5100CHP


    OCR Scan     		PDF 14-Pin SD5100CHP SD5100N SD5101CHP SD5101N Drivers--SD5100 Drivers--SD5101 SD5100 SO-16) OT-143)

    BCX70

    Abstract: BCX70J
    Text: BCW60 BCX 70 NPN Silicon AF Transistors • • • • • F or AF input stages and d river applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Low noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BCW 61, BCX 71 PNP


    OCR Scan     		PDF BCW60 ITTT111------- BCX70 BCX70J

    Untitled

    Abstract: No abstract text available
    Text: 3GE D rz 7 “ 7# • 7^237 QG3114^ 1 ■ "T*3S-| 5 SGS-THOMSON 5 _Œ Û T O « S _ 2 N 3 0 1 3 S 6 S-THOMSON HIGH SPEED SATURATED SWITCHES D ESCRIPTIO N The 2N3013 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case intended for high


    OCR Scan     		PDF QG3114^ 2N3013

    BF926

    Abstract: BF926 philips PNP UHF transistor transistor BF926
    Text: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and


    OCR Scan     		PDF BF926_ 920S2 BF926 BF926 philips PNP UHF transistor transistor BF926

    MDA220

    Abstract: MOC3030 application notes VQB 28 E MC14404 2N6558 MK1V135 mc145414 2N6558 MOTOROLA mc3417 power supply ctx monitor 762
    Text: MOTOROL A SC {TELECOM}- 01 D e | L3b75S3 00flQM3t. 1 I -r~ v s '" // - ¡ y MC3419-1L TELEPHONE LINE-FEED CIRCUIT . . . designed as the heart of a circuit to provide BORSHT functions for telephone service in Central Office, PABX, and Subscriber Car­ rier equipment. This circuit provides dc power for the telephone


    OCR Scan     		PDF 3b75S3 MC3419 moc3030 mje271 mje270 mpsa56 2n3905 1n4007 MDA220 MOC3030 application notes VQB 28 E MC14404 2N6558 MK1V135 mc145414 2N6558 MOTOROLA mc3417 power supply ctx monitor 762

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TY P E 2SC4843 Unit in mm V H F -U H F BA N D LO W NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. N F = l.ld B , |S2lel2=15.5dB f=lGHz 2 .1 ± 0.1 □ M A X IM U M RATINGS (Ta = 2 5°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4843 --20mA

    irfs614a

    Abstract: MOSFET pA leakage
    Text: IRFS614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 250V H Lower Rds{on) * ^ •393


    OCR Scan     		PDF IRFS614A irfs614a MOSFET pA leakage

    3SD21

    Abstract: tt 2144 bv ui 302 0220
    Text: TELEDYNE COMPONE NTS EflE D Ml fi'ilTbaa QQ0b3fi3 1 M _ - r - 3 , z -y 1 0 2 1 0 ,8 0 2 1 1 ,5 0 2 1 2 , SD 2 1 3 ,S D 2 1 4 ,S D 2 1 5 SEM IC O N D U C TO R N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION


    OCR Scan     		PDF O-206AF CTO-72) SD210DE SD210DBR SD211DE SD211DE/R SD211CHP SD212DE SD212DE/R SD212CHP 3SD21 tt 2144 bv ui 302 0220

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package M a r k i n g on S O T - 3 6 3 p a c k a g e


    OCR Scan     		PDF 3904PN 3904PN Q62702-C OT-363

    d880

    Abstract: No abstract text available
    Text: flêD D • fl2 3 S b 0 5 0Q1SQ0& h M S I E G SIEMENS AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^D S o n = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode


    OCR Scan     		PDF C67078-A3116-A2 d880

    KDS 7c

    Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
    Text: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode


    OCR Scan     		PDF fl23Sb05 C67078-A3116-A2 fl23St QQ15012 fl23SbOS KDS 7c A3116 DIODE S45 C67078-A3116-A2 156* diode

    LSE B10

    Abstract: 2267.1 2SB127 22671 2SB12 2SB1271 2SD190
    Text: 2267B Ordering num ber: EN SA W O i I 2SB1271/2SD1907 N0.2267B PNP/NPN Epitaxial Planar Type Silicon Transistors r H i g h -C u r r e n t Sw i t c h i n g A p p l i c a t i o n s Applications . Suitable for relay drivers, high-speed inverters, converters, and other


    OCR Scan     		PDF 2267B 2SB1271/2SD1907 2SB1271 LSE B10 2267.1 2SB127 22671 2SB12 2SD190

    Untitled

    Abstract: No abstract text available
    Text: UNIVERSAL SEMICONDUCTOR 41E D • T3t.ö341 Q D G O I O S U N IV E R S A L 455 ■ UNV T~3?~OS SD210, SD 211, S D 2 12 SD213, SD 214, S D 215 N-Channel Enhancement-Mode Lateral D-MOS FETs O rd ering Info rm ation O a t* P ro ta o tlv a D loda 1 0 V ,480 20V, 45»


    OCR Scan     		PDF SD210, SD213, SD211DE SD2130E SD211DE/R SD213DE/R SD211CHP SD213CHP SD210DE SD212DE

    IC marking jw

    Abstract: 2SC5097
    Text: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S2le|2= lOdB f=2GHz -fr M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5097 IC marking jw 2SC5097