IRC 265
Abstract: DP63950 DP83950BVQB DP83950BVQB-MPC MNDP83950B-VQB T101 T102 T103 T104 T105
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 10/24/94 Last Update Date: 02/24/99 Last Major Revision Date: 10/24/94 MNDP83950B-VQB REV 0B0 REPEATER INTERFACE CONTROLLER General Description The "RIC" may be used to implement an IEEE 802.3 multiport repeater unit including the
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MNDP83950B-VQB
VUL160ARB
28x28x3
160LD
M0003282
MNDP83950B-VQB,
IRC 265
DP63950
DP83950BVQB
DP83950BVQB-MPC
T101
T102
T103
T104
T105
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Untitled
Abstract: No abstract text available
Text: DLI 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE Multiple Level Sensor Multiple Level Sensor Multiple Level Sensor & Ground Multiple Level Sensor & Ground Dual Level & Ground 1595950000 1565970000 1578550000 1578560000 1578530000 1578540000 1578570000
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wiring VDG 13 relay
Abstract: Battery Managements wiring VDG 14 relay CI 3060 elsys 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere20
MC33121/D*
wiring VDG 13 relay
Battery Managements
wiring VDG 14 relay
CI 3060 elsys
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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wiring VDG 13 relay
Abstract: MC33120 TIP 22 transistor MC33120P Battery Managements 20k301 darlington circuit tip 42 HB205 1N6290A MC33120FN
Text: Order this data sheet by MC33120/D MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC The MC33120 is designed to provide the interface between the 4-wire side of a central office, or PBX, and the 2-wire subscriber line. Interface
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MC33120/D
MC33120
MC33120
wiring VDG 13 relay
TIP 22 transistor
MC33120P
Battery Managements
20k301
darlington circuit tip 42
HB205
1N6290A
MC33120FN
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wiring VDG 13 relay
Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Text: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738
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MC33121/D
MC33121
MC33121
refere12
wiring VDG 13 relay
Battery Managements
long range gold detector circuit diagram
PIN CONFIGURATION IC RT 3060
1N4002
1N6282
1N6287
MC33121FN
MC33121P
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TAG 600
Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Text: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect
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vqb 201
Abstract: VQB201 VQB 28 E vqb 27 vqb 200 FUNKAMATEUR-Bauelementeinformation VQB200 Funkamateur ma702 vqb 200 d
Text: FUNKAMATEUR-Bauelementeinformation VQB 200 VQB 201 Einstellige Lichtschachtbauelemente grünstrahlend, Zeichenhöhe 12,7 mm, 16 Segmente und Dezimalpunkt, mit Diodenchips auf GaP-Basis Hersteller: VEB Werk für Fernsehelektronik Berlin TGL 42170 Kurzcharakteristik
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VQB 28 E
Abstract: vqb 27 VQB28 Siebensegmentanzeige VQb 28 VQB 18 VQB16 vqb 27 f VQB27 VQB18
Text: FUNKAMATEUR-Bauelementeinformation Einstellige Lichtschachtbauelemente rot- bzw. grünstrahlend, Ziffernhöhe 19,6 mm, mit Diodenchips auf GaA/As- bzw. GaP-Basis VQB16/17/18 VQB 26/27/28 T G L 55111 Hersteller: V E B W erk für Fernsehelektronik Berlin Kurzcharakteristik
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VQB16/17/18
VQB 28 E
vqb 27
VQB28
Siebensegmentanzeige
VQb 28
VQB 18
VQB16
vqb 27 f
VQB27
VQB18
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NPN MATCHED PAIRS
Abstract: NPN pnp MATCHED PAIRS 5121 M DI4044 DI-2060
Text: HIGH GAIN - SMALL SIGNAL - NPN - MATCHED PAIRS mV Max. •>FEl/l<FE2 Diff. @ lc“ 10 /iA I e“ 0 V ebo Volts Min. @ I e*“ 1 0 / xA lc=0 @ 60 7 Dl 4100 4879 5.0 0.85 to 1.0 55 55 7 By Dl 4045 4880 5.0 0.8 to 1.0 45 45 7 0.1 @ Vqb = 30 Its Dl 4045-1 10.0
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DI-2060
100/xA
Ie-10/xA
100pA
Ie-10/Ã
500mA
NPN MATCHED PAIRS
NPN pnp MATCHED PAIRS
5121 M
DI4044
DI-2060
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VQB 24 E
Abstract: VQB 28 E VQb 28 0485400000 vqb 15
Text: D LI 2 .5 LD P N P D L I 2 .5 LD N P N D L A 2 .5 D LA 2 .5 D D L D 2 .5 PE j ß o-#o 0 — 4, o-H ZH Multiple Level Sensor C_> o— •—o k" o -*Q — ' °¿ r° T_r Multiple Level Sensor -,_ r C -j Multiple Level Sensor & Ground C_J T_r Multiple Level Sensor
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hp 2212
Abstract: 1783550000
Text: D U 2.5 LD PNP DLI 2.5 LD NPN DLA 2.5 DLA 2.5D DLD 2.5 PE °¿F ° o-*o 0 - 9— O o-»CH ° “ L ° ~ l Part No. M ultiple Level Sensor & Ground Part No. Dual Level & Ground Part No. Part No. 1783560000 1783790000 1783980000 1783950000 1783600000 1783970000
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diode 1n4007
Abstract: VQB 28 E vqb 15 0485400000 Diode -1N4007 diode,1N4007 diode 1N4007 terminal Diode 1N4007 vh
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly w ell-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring pow er to the
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Wh6900000
diode 1n4007
VQB 28 E
vqb 15
0485400000
Diode -1N4007
diode,1N4007
diode 1N4007 terminal
Diode 1N4007 vh
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diode 1n4007
Abstract: diode,1N4007 diode 1N4007 terminal Diode -1N4007 DLD 2.5 Diode Marking 1N4007 1317660000 of 1n4007
Text: Feed Through Terminals DLD 2.5 DLI 2.5 Triple Level M ultiple Level Sensor The DLI and DLD terminal blocks are particularly well-suited for use with three-wire proximity sensors. A typical application would use a single DLD feed through block to bring power to the
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bvoe
Abstract: TSC* 7 VQB 28 E
Text: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ
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SD5400
SD5401
SD5402
107dB@
SD5400.
SD5401
4-250C
bvoe
TSC* 7
VQB 28 E
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E
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68000-A6482
OT-23
Jan-22-1999
P00839
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LL250
Abstract: No abstract text available
Text: Feed Through Terminals VLI 1.5 V LI 1.5 PE M A K 2 .5 jm t W r ip s Ä 0 — — —0 o -o — °~^r -O Multiple Level Sensor Multiple Level Sensor & Ground Triple Level & Ground Terminal Block Selection Data Available Options Dimensions
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0520000000End
LL250
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21134 transistor
Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Text: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to
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b3b7254
244C-01,
21134 transistor
RF1029
21134
case 244c-01
21134 npn
RF NPN POWER TRANSISTOR 3 GHZ 5w
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23
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Q68000-A6479
OT-23
Jan-22-1999
100MHz
EHP00879
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Untitled
Abstract: No abstract text available
Text: VLI 1.5 PE VLI 1.5 Screw Clamp 35 mm DIN-Rail Terminals Multiple Level Sensors MAK2.5 o— o o— o o O -o o -o o- o o -o Q o o “1 — o ± Dimensions 6 / 7 9 / 6 4 .2473.1172.52" 6 / 6 9 / 6 3 (.2472.7272.48") 6 / 8 8 / 6 4 (.2473.4772.52") 7 (.28") 7 (.28")
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L-U/250
5/50BL*
5/50RT'
5/50SW*
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CT1012
Abstract: Sd80-02 TIC 107
Text: SD5000, SD5001, SD5002 Universal Semiconductor N -C hannel E nhancem ent Mode Quad D-Mos F E T A nalog S w itch A rra y s O rdering Inform ation Description 20V , 500 10V, 500 15V, 50 0 16-Pin Plastic DIP 16-Pin Cerdip Gold-Backed Chips in Waffle Pack SD5000N
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SD5000,
SD5001,
SD5002
16-Pin
SD5000N
SD5000J
SD5000CHP
SD5001N
SD5001J
CT1012
Sd80-02
TIC 107
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diode AE 84A
Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Text: BDW84, BDW84A, BDW84B, BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright 1987, Power Innovations Limited, UK • A U G U ST 1978 • R E V IS E D M A R C H 1997 Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D • 150 W at 25°C Case Temperature
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BDW84,
BDW84A,
BDW84B,
BOW84C,
BDW84D
BDW83,
BDW83A,
BDW83B,
BDW83C
BDW83D
diode AE 84A
BOW84C
TRANSISTOR Bdw84d
BDW 65 C
BOW84
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motorola rf Power Transistor mrf317
Abstract: hfc4
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W
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Carrier/120
MBF317
motorola rf Power Transistor mrf317
hfc4
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c1235
Abstract: VQB 28 E
Text: PNP Silicon Darlington Transistors • • • • BCP 28; BCP 48 For general AF applications High collector current High current gain Complementary types: 8CP 29/49 NPN Type M arking O rdering code (12-m m tape) Package* BCP 28 BCP 28 Q 62702- Cl 234 SOT-223
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Q62702
C1235
OT-223
OT-223
BCP28
BCP48
c1235
VQB 28 E
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vqb 71
Abstract: 074I sem 304 SD50G1
Text: TELEDYNE COMPONENTS awbüa HflE J> aoot.444 t. SD5000, SD5001, SD5002 SEM ICO N D U CTO R T 7 e5 7 ~ / / N-CHANNEL ENHANCEMENT-MODE QUAD D-MOS FET ANALOG SWITCH ARRAYS ORDERING INFORMATION Sort«! Chip* fn W«fffe Pack SD5000CHP SD50CHCHP 1$-PfnCsram!c Dual In-Line Package
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SD5000CHP
SD5000J
SD500QN
SD5000,
SD5001,
SD5002
SD50CHCHP
SD5001J
SD5002CH«
SD5Q02M
vqb 71
074I
sem 304
SD50G1
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