varactor diode parameter
Abstract: ODS-1203 MA46H120
Text: GaAs Constant Gamma Flip-Chip Varactor Diode MA46H120 MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
|
Original
|
PDF
|
MA46H120
MA46H120
varactor diode parameter
ODS-1203
|
Untitled
Abstract: No abstract text available
Text: RoHs Compliant GaAs Flip-Chip Multiplier Varactor Diode MA46H146 V3 Features • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration Description M/A-COM’s MA46H146 is a gallium arsenide flip
|
Original
|
PDF
|
MA46H146
|
Untitled
Abstract: No abstract text available
Text: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V3 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration
|
Original
|
PDF
|
MAVR-000120-1411
70GHz
|
Untitled
Abstract: No abstract text available
Text: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V2 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration
|
Original
|
PDF
|
MAVR-000120-1411
70GHz
|
Untitled
Abstract: No abstract text available
Text: MA46H120 Series M/A-COM Products GaAs Constant Gamma Flip-Chip Varactor Diode Rev. V1 Features • Constant Gamma for Linear Tuning · Low Parasitic Capacitance · High Q · Silicon Nitride Passivation · Polyimide Scratch Protection · Surface Mount Configuration
|
Original
|
PDF
|
MA46H120
|
MA46H120
Abstract: varactor diode GaAs varactor diode macom Polyimide
Text: MA46H120 Series GaAs Constant Gamma Flip-Chip Varactor Diode Features • Constant Gamma for Linear Tuning • Low Parasitic Capacitance • High Q • Silicon Nitride Passivation • Polyimide Scratch Protection • Surface Mount Configuration Rev. V3 Absolute Maximum Ratings 1,2
|
Original
|
PDF
|
MA46H120
varactor diode
GaAs varactor diode
macom
Polyimide
|
varactor flip chip
Abstract: MA46H146
Text: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Features n n n n n V 2.00 Chip Layout Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration Front View Circuit Side
|
Original
|
PDF
|
MA46H146
MA46H146
MA46H146-W
MA46H146-T
varactor flip chip
|
MA46H120
Abstract: gaas varactor diodes varactor flip chip varactor diode "Varactor Diode"
Text: MA46H120 Series GaAs Constant Gamma Flip-Chip Varactor Diode Rev. V2 Features • Constant Gamma for Linear Tuning · Low Parasitic Capacitance · High Q · Silicon Nitride Passivation · Polyimide Scratch Protection · Surface Mount Configuration Absolute Maximum Ratings 1,2
|
Original
|
PDF
|
MA46H120
MA46H120
gaas varactor diodes
varactor flip chip
varactor diode
"Varactor Diode"
|
Untitled
Abstract: No abstract text available
Text: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode M/A-COM Products Rev. V4 Features • • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration RoHS* Compliant
|
Original
|
PDF
|
MA46H146
MA46H146
|
MA46H146
Abstract: varactor flip chip
Text: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Rev. V4 Features • • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration RoHS* Compliant Absolute Maximum Ratings1 @ TA=+25 °C
|
Original
|
PDF
|
MA46H146
MA46H146
varactor flip chip
|
mavr
Abstract: No abstract text available
Text: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Absolute Maximum Ratings 1,2 Features • V1 Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation
|
Original
|
PDF
|
MAVR-000120-1411
mavr
|
varactor flip chip
Abstract: ma46h120 gold embrittlement ODS-1203
Text: Silicon Bipolar XXXXXXX Headline Part Number MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout TOP VIEW Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
|
Original
|
PDF
|
MA46H120
MA46H120
varactor flip chip
gold embrittlement
ODS-1203
|
SKY65050-372LF
Abstract: No abstract text available
Text: Automotive Part numbers link to product information C B E K AEC Q101 Qualified Products* SMSA7630-061 SMPA1302-079LF SMVA1200-999LF SMPA1304-011LF SMVA1211-001LF SMPA1304-019LF SMVA1248-079LF SMPA1320-070LF SMVA1253-079LF SMPA3923-011LF SMVA1400-611LF SMSA3923-011LF
|
Original
|
PDF
|
SMSA7630-061
SMPA1302-079LF
SMVA1200-999LF
SMPA1304-011LF
SMVA1211-001LF
SMPA1304-019LF
SMVA1248-079LF
SMPA1320-070LF
SMVA1253-079LF
SMPA3923-011LF
SKY65050-372LF
|
varactor
Abstract: varactor flip chip GMV7811-000 GMV7821 GMV7811 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000
Text: GaAs Hyperabrupt Junction Varactor Diodes GMV7811, GMV7821 GMV9801, GMV9821, GMV9822 Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon
|
Original
|
PDF
|
GMV7811,
GMV7821
GMV9801,
GMV9821,
GMV9822
00e-14
5e-12
GMV7811
GMV9801
varactor
varactor flip chip
GMV7811-000
GMV7821
GMV7811
GMV7821-000
GMV9801
GMV9801-000
GMV9821
GMV9821-000
|
|
|
varactor flip chip
Abstract: CMOS Stacked RF INtermétal
Text: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media
|
Original
|
PDF
|
100GHz.
WFS-FS-21329-11/2008
varactor flip chip
CMOS Stacked RF
INtermétal
|
Diodes
Abstract: RF Diode Design Guide
Text: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,
|
Original
|
PDF
|
eng508
BRO389-11B
Diodes
RF Diode Design Guide
|
Untitled
Abstract: No abstract text available
Text: CATV / Satcom Solutions June 2012 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog semiconductors. Leveraging core technologies, Skyworks offers high performance analog products supporting automotive, broadband, cellular infrastructure, energy management, industrial, medical, military, wireless
|
Original
|
PDF
|
device735
BRO402-12C
|
GaAs varactor diode
Abstract: ODS-1203 varactor diode
Text: MA46H120 M/A-COM AlftCGM GaAs Constant Gamma Flip Chip Varactor Diode m r f& Features • • • • • • Microwave Products Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
|
OCR Scan
|
PDF
|
MA46H120
MA46H120
GaAs varactor diode
ODS-1203
varactor diode
|
A46H
Abstract: No abstract text available
Text: MA46H120 M/A-COM GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • A ßQ ^ A Miyûwavtt Hrortiirts Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection
|
OCR Scan
|
PDF
|
MA46H120
A46H
|
GMV9823-000
Abstract: No abstract text available
Text: GaAs Hyperabrupt Junction Varactor Diodes EBAlpha GMV7811-GMV7815, GMV7821-GMV7825 GMV9801-GMV9806, GMV9821-GMV9826 Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in
|
OCR Scan
|
PDF
|
GMV7811-GMV7815,
GMV7821-GMV7825
GMV9801-GMV9806,
GMV9821-GMV9826
100mA
GMV9801-000
GMV9801-210.
2/99A
GMV9823-000
|
Untitled
Abstract: No abstract text available
Text: O -Sì fe ^ co < O TO A m p lifie rs Frequency GHz Description Gain (dB) Min. Noise Figure (dB) Max. Power P1 dB (dBm) Typ. 19 2.9 6 Bias Output IP3 Voltage VD (dBm) Typ. (V) Package Type Part Number Low Noise Amplifiers 3.2-3.8 Switchable Gain LNA 2 S o
|
OCR Scan
|
PDF
|
QFN-16
AL108-338
GMV7811-000
GMV7821-000
GMV9801-000
GMV9821-000
GMV9822-000
|
Untitled
Abstract: No abstract text available
Text: Microwave ICs and Discrete Semiconductors CO -92 42 •5 ° .P T3 c l .O Q •£5 2a» § 8 - CO -o e to 3 y ? 2 .8 I ? C to Q> </> I -S •5 £ 5 § ° !2 Q Microwave ICs and Discrete Semiconductors . . .38 Chip, Chip on Board, and Hermetic Packaged S w itc h e s .39
|
OCR Scan
|
PDF
|
|
80500 TRANSISTOR
Abstract: Vo 80500 TRANSISTOR HE 80500 HE 80500 TRANSISTOR CT 80500 80500+TRANSISTOR GR-900 double slug tuner varactor diode q factor measurement Silicon Power Cube
Text: Application Note 80500: Tuning Diodes L introduction In recent years continuous development of tuning varactors - voltage controlled capacitors - together with an increased commercial and military use has led to sub stantial improvement in Q, reproducibility, and reliability.
|
OCR Scan
|
PDF
|
Figure81sketches
DKV6550B
DVH6791,
80500 TRANSISTOR
Vo 80500 TRANSISTOR
HE 80500
HE 80500 TRANSISTOR
CT 80500
80500+TRANSISTOR
GR-900
double slug tuner
varactor diode q factor measurement
Silicon Power Cube
|
SC9100-007
Abstract: GMV9823-000 ATN3584-02 DMK2308 AA038P5-00
Text: Millimeterwave 1C and Discrete Semiconductor Products Selection Guide EBAlpha Low Noise Am plifiers Die Size mm Noise Figure (dB) Gain (dB) Pi dB (dBm) Bias (V) Ids (mA) Part Number Page Number 20-24 1.25X2.35 2.5 22.0 8.0 +4.5 (Self) 24 AA022N1-00 1-2 24-30
|
OCR Scan
|
PDF
|
AA022N1-00
AA028N1-00
AA035N1-00
AA038N1-00
ATN3584-40
SC9100-007
2/99A
GMV9823-000
ATN3584-02
DMK2308
AA038P5-00
|
