V103 TRANSISTOR Search Results

V103 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

V103 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
187 series faston tab Abstract: psr 70 Text: PSA/PSR Series Data Sheet Positive Switching Regulators Features • RoHS lead-free-solder and lead-solder-exempted products are available • Input voltage up to 144 VDC • Single output 5 to 48 V • No input-to-output isolation • High efficiency up to 95%	Original	PDF	BCD20025-G 25-Jun-2012 187 series faston tab psr 70
Untitled Abstract: No abstract text available Text: PSA/PSR Series Data Sheet Positive Switching Regulators Features • RoHS lead-free-solder and lead-solder-exempted products are available • Input voltage up to 144 VDC • Single output 5 to 48 V • No input-to-output isolation • High efficiency up to 95%	Original	PDF	BCD20025-G 13-Aug-2012
transistor fp 1016 79 p Abstract: PSR53-9 transistor FN 1016 91 p Text: PSA/PSR Series Data Sheet Positive Switching Regulators Features • RoHS lead-free-solder and lead-solder-exempted products are available • Input voltage up to 144 VDC • Single output 5 to 48 V • No input-to-output isolation • High efficiency up to 95%	Original	PDF	BCD20025-G 13-Oct-2011 transistor fp 1016 79 p PSR53-9 transistor FN 1016 91 p
PSC5A12-7IR Abstract: No abstract text available Text: PSC, PSL Series Data Sheet Positive Switching Regulators 107 4.2" 3U 32 1.3" 88 3.5" 151 5.9" 37 1.5" 8 TE 168 6.6" Features • Input voltage up to 144 VDC • Single output of 3.3 to 48 VDC • No input-to-output isolation Description • High efficiency up to 97%	Original	PDF	BCD20027-G 7-Apr-2011 PSC5A12-7IR
DIODE SMD v105 Abstract: DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor Text: INTEGRATED CIRCUITS DATA SHEET SAA1575HL Global Positioning System GPS baseband processor Product specification Supersedes data of 1999 May 17 File under Integrated Circuits, IC18 1999 Jun 04 Philips Semiconductors Product specification Global Positioning System (GPS)	Original	PDF	SAA1575HL 80C51XA 285002/02/pp56 DIODE SMD v105 DIODE SMD c336 smd V105 TP218 transistor 27C202 TCO-987 C219-33 diode V105 L-286 C345 plastic transistor
BB 505 Varicap Diode Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114 Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent	Original	PDF	3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
HT 1000-4 power amplifier Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370 Text: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION	Original	PDF	75WATT HT 1000-4 power amplifier triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370
isl 6251 schematic Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.	Original	PDF	Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
block diagram of suction pump Abstract: ABB inverter motor fault code festo valve D13001 siemens s7-200 plc programs examples cnc wiring servo motor festo 161 361 EM- 284 stepper motor AUTOMATIC cooling system in lathe ppt PROTECTIVE RELAY CEE MANUFACTURER Text: Technology for education and science The current range of Festo Didactic products 2014 Content Media .10 Workstation systems .76	Original	PDF
BUZ34 Abstract: 6j11 V103 Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ34_ ObE D • bb53T31 ODlMblS E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ34 bb53T31 bb53131 T-39-1 BUZ34 6j11 V103
BUZ60 Abstract: KB53 T0220AB Text: PowerMOS transistor_ BUZ60 N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0014475 1_ ■ May 198T GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ60 0Q1M475 T0220AB; T-39-11 BUZ60 KB53 T0220AB
nh348 Abstract: BUZ45B D-19 V103 SD 347 transistor Text: N AMER P H I L I PS / D IS CR E TE ObE PowerMOS transistor D • “ bbSBTBl OOmbtl 4 ■ BÜZ45B ' r - 3<?-i3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a metal envelope. This device is intended for use in	OCR Scan	PDF	BUZ45B bbS3T31 Q014bb7 T-39-13 nh348 BUZ45B D-19 V103 SD 347 transistor
BUZ63 Abstract: V103 TRANSISTOR V103 Text: PowerMOS transistor BUZ63 N AMER PH IL IPS/DISCRETE DbE D • . J hbSBTBl D014b33 T ■ July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ63 DDI4b33 7z83885 bb53T31 BUZ63 V103 TRANSISTOR V103
V103 TRANSISTOR Abstract: transistor k 3911 BUZ307 V103 K 3911 Text: N AMER PH IL IPS/DISCR ETE DbE D • PowerMOS transistor tLSaiBl G014Ô01 BUZ307 r - 3 ^ -1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ307 T0218AA; 0014SD7 T-39-11 V103 TRANSISTOR transistor k 3911 BUZ307 V103 K 3911