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    ULTRAFAST RECOVERY 1200 V Search Results

    ULTRAFAST RECOVERY 1200 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJU65E05DWT-00#X0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
    RJU1CF06DWS-00#W0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
    RJU65F23DWT-00#X0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
    RJU65F26DWT-00#X0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation
    RJU65F27DWT-00#X0 Renesas Electronics Corporation Fast Recovery Diodes Visit Renesas Electronics Corporation

    ULTRAFAST RECOVERY 1200 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STTH512B

    Abstract: STTH512FP STTH512D STTH512 STTH512B-TR 600V Ultrafast Diode DPAK
    Text: STTH512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 5A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 48 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation


    Original     		PDF STTH512 O-220FPAC STTH512FP O-220AC STTH512D STTH512B STTH512B-TR STTH512B STTH512FP STTH512D STTH512 STTH512B-TR 600V Ultrafast Diode DPAK

    Untitled

    Abstract: No abstract text available
    Text: STTH512 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 5A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 48 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation


    Original     		PDF STTH512 O-220FPAC STTH512FP O-220AC STTH512D STTH512B STTH512B-TR

    STTH812D

    Abstract: STTH812G STTh812DI STTH812 STTH812FP STTH812G-TR
    Text: STTH812 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 8A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns Ultrafast, soft recovery • Very low conduction and switching losses ■ High frequency and/or high pulsed current operation


    Original     		PDF STTH812 O-220Ins O-220FPAC STTH812FP O-220AC STTH812D STTH812G STTH812DI STTH812D STTH812G STTh812DI STTH812 STTH812FP STTH812G-TR

    stth3012d

    Abstract: STTH3012W JESD97 STTH3012 k30a
    Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns A K DO-247 STTH3012W Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH3012 DO-247 STTH3012W O-220AC STTH3012D stth3012d STTH3012W JESD97 STTH3012 k30a

    Untitled

    Abstract: No abstract text available
    Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns A K DO-247 STTH3012W Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH3012 DO-247 STTH3012W O-220AC STTH3012D

    Untitled

    Abstract: No abstract text available
    Text: STTH1212 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 12 A VRRM 1200 V Tj 175° C VF (typ) 1.25 V trr (typ) 50 ns A K TO-220AC STTH1212D Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH1212 O-220AC STTH1212D STTH1212G

    k30a

    Abstract: STTH3012W JESD97 STTH3012 STTH3012D marking L5
    Text: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current


    Original     		PDF STTH3012 DO-247 STTH3012W O-220AC STTH3012D JESD97. k30a STTH3012W JESD97 STTH3012 STTH3012D marking L5

    SML75SUZ12T

    Abstract: No abstract text available
    Text: SML75SUZ12T Ultrafast Recovery Diode 1200 Volt, 75Amp Back of Case TECHNOLOGY Cathode The planar passivated and standard ultrafast recovery diode features a triple charge control action utilising SML Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML75SUZ12T 75Amp 75SUZ12T O-247 SML75SUZ12T

    Untitled

    Abstract: No abstract text available
    Text: STTH6012 Ultrafast recovery - 1200 V diode Main product characteristics IF AV 60 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 50 ns A K Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current


    Original     		PDF STTH6012 DO-247 STTH6012W

    9514A

    Abstract: JESD97 STTH312 STTH312B STTH312B-TR
    Text: STTH312 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 3A VRRM 1200 V Tj 175° C VF (typ) 1.15 V trr (typ) 55 ns K K A Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current


    Original     		PDF STTH312 STTH312B 9514A JESD97 STTH312 STTH312B STTH312B-TR

    JESD97

    Abstract: STTH6012W Marking STMicroelectronics TO 247 stth6012
    Text: STTH6012 Ultrafast recovery - 1200 V diode Main product characteristics IF AV 60 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 50 ns A K Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current


    Original     		PDF STTH6012 DO-247 STTH6012W JESD97 STTH6012W Marking STMicroelectronics TO 247 stth6012

    Untitled

    Abstract: No abstract text available
    Text: SML30SUZ12B Ultrafast Recovery Diode 1200 Volt, 30 Amp TECHNOLOGY Back of Case The planar passivated and standard ultrafast recovery Cathode diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with SML


    Original     		PDF SML30SUZ12B 30SUZ03B

    STTH9012TV2

    Abstract: JESD97 STTH9012TV1
    Text: STTH9012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 45 A VRRM 1200 V Tj 150° C VF (typ) 1.20 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH9012TV2 STTH9012TV1 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH9012TV STTH9012TV2 STTH9012TV1 STTH9012TV2 JESD97 STTH9012TV1

    Untitled

    Abstract: No abstract text available
    Text: STTH9012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 45 A VRRM 1200 V Tj 150° C VF (typ) 1.20 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH9012TV2 STTH9012TV1 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH9012TV STTH9012TV2 STTH9012TV1

    STTH6112TV2

    Abstract: STTH6112TV1 JESD97
    Text: STTH6112TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 30 A VRRM 1200 V Tj 150° C VF (typ) 1.30 V trr (typ) K2 A2 K1 A1 K1 K2 A1 STTH6112TV2 STTH6112TV1 45 ns A2 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses


    Original     		PDF STTH6112TV STTH6112TV2 STTH6112TV1 STTH6112TV2 STTH6112TV1 JESD97

    SML75EUZ12T

    Abstract: No abstract text available
    Text: SML75EUZ12T Enhanced Ultrafast Recovery Diode 1200 Volt, 75 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 75EUZ12T diode features a triple charge control action utilising Semelab’s Graded buffer Zone technology combined with


    Original     		PDF SML75EUZ12T 75EUZ12T SML75EUZ12T

    Untitled

    Abstract: No abstract text available
    Text: STTH1512 1200 V ultrafast recovery diode Features A • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated package: DOP3I


    Original     		PDF STTH1512 STTH1512PI DO247 STTH1512W STTH1512G

    STTH1512W

    Abstract: DO-247 DO247 transistors marking 2XI STTH1512 STTH1512D STTH1512G STTH1512PI
    Text: STTH1512 1200 V ultrafast recovery diode Features A • Ultrafast, soft recovery ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation ■ High reverse voltage capability ■ High junction temperature ■ Insulated package: DOP3I


    Original     		PDF STTH1512 STTH1512PI DO247 STTH1512W STTH1512G O-220Ay STTH1512W DO-247 DO247 transistors marking 2XI STTH1512 STTH1512D STTH1512G STTH1512PI

    common anode 600v

    Abstract: 1200v 30A to247 600v 30A fast recovery diode
    Text: SML30SUZ12TC Ultrafast Recovery Diode 1200 Volt, 2 x 30 Amp Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 30SUZ12TC 1 - Anode 1 diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML30SUZ12TC 30SUZ12TC common anode 600v 1200v 30A to247 600v 30A fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: SML30SUZ12B SEME LAB Ultrafast Recovery Diode 1200 Volt, 30 Amp TO-247 Package Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 30SUZ12B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML30SUZ12B O-247 30SUZ12B

    Untitled

    Abstract: No abstract text available
    Text: SML20EUZ12B SEME LAB TO-247 Package Back of Case Cathode Enhanced Ultrafast Recovery Diode 1200 Volt, 20 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 20EUZ12B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML20EUZ12B O-247 20EUZ12B

    ir 2407

    Abstract: No abstract text available
    Text: SML30EUZ12TC Enhanced Ultrafast Recovery Diode 1200 Volt, 2 x 30 Amp Back of Case Cathode TECHNOLOGY SML 30EUZ12TC 1 - Anode 1 2 - Com. Cathode The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML30EUZ12TC 30EUZ12TC ir 2407

    Untitled

    Abstract: No abstract text available
    Text: RHRG30120 November 2013 Data Sheet 30 A, 1200 V, Hyperfast Diode Features • Hyperfast Recovery trr = 85 ns @ IF = 30 A The RHRG30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon


    Original     		PDF RHRG30120 RHRG30120

    Untitled

    Abstract: No abstract text available
    Text: SML75SUZ12JD SEME LAB Ultrafast Recovery Diode 1200 Volt, 2 x 75 Amp SOT-227 Package 1- Cathode 2 2- Anode 2 TECHNOLOGY The planar passivated and standard ultrafast recovery SML 7 5 S U Z 1 2 JD diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with


    Original     		PDF SML75SUZ12JD OT-227