disadvantages of resistor
Abstract: Undershoot FSTU32160 FSTU32160A FSTU3257 FSTU3384 FSTU6800 FSTUD16211 undershoot voltage spikes
Text: Product Information from Fairchild Semiconductor For more information, visit us at www.fairchildsemi.com Rev. October, 2000 FAIRCHILD’S UNDERSHOOT-PROTECTED SWITCHES Fairchild Switch Applications An Undershoot Event Transient On An or Bn Ground Potential Data Corruption on the Isolated Bus
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300mV,
100mA
disadvantages of resistor
Undershoot
FSTU32160
FSTU32160A
FSTU3257
FSTU3384
FSTU6800
FSTUD16211
undershoot voltage spikes
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preventing DC voltage spikes
Abstract: Bus Switches AN-5021 FSTU32160 can bus voltage CAN BUS CIRCUIT undershoot voltage spikes
Text: Fairchild Semiconductor Application Note October 2000 Revised October 2000 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus
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AN-5021
preventing DC voltage spikes
Bus Switches
FSTU32160
can bus voltage CAN BUS CIRCUIT
undershoot voltage spikes
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Bus Switches
Abstract: AN-5021 FSTU32160
Text: Fairchild Semiconductor Application Note October 2000 Revised October 2006 Bus Switch Undershoot Protection: Which Systems Need this Protection and Why Bus switches have become commonplace in may system applications. Bus switches are used for bus isolation, bus
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AN-5021
Bus Switches
FSTU32160
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NC7SZ74
Abstract: 16862 FSTU16211 FSTU162211 FSTU162450 FSTU16345 FSTU16861 FSTU3125 FSTU32160 FSTU32160A
Text: Fairchild Interface & Logic Notebook Solutions Superior Performance Solutions Low Voltage Logic Switches TinyLogic Optoelectronics Smaller Packaging Solutions MicroPak™ Ball Grid Array BGA Analog Discrete Interface & Logic Applications Docking station bus switch isolation
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IN 5008 DIODE
Abstract: AN-5008 nmos transistor FSTU6800 Fairchild Bipolar Transistor High Beta
Text: Fairchild Semiconductor Application Note March 1999 Revised October 2006 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data
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ttl cmos advantages disadvantages
Abstract: 74VCXF162835 FMS7857 FSTU16450 FSTU32160 FSTU3257 FSTU3384 FSTU6800 FSTUD16211 PC133 registered reference design
Text: Interface & Logic Fairchild Server Solutions Superior Performance Solutions: Bus Switches GTLP Interface Low-Voltage Logic DIMM Support Smaller Packaging Solutions: TinyLogic Ball Grid Array BGA Applications: Live Insertion For PCI and PCIx Bus and Backplanes
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IN 5008 DIODE
Abstract: AN-5008 FSTU6800
Text: Fairchild Semiconductor Application Note March 1999 Revised December 2000 FSTU - Undershoot Protected Fairchild Switch Family Introduction Fairchild Switch FST Bus Switch products have become powerful tools in the modern personal computer as well as increasing in popularity in telecommunications and data
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FDS4070N7
Abstract: No abstract text available
Text: FDS4070N7 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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FDS4070N7
FDS4070N7
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U420B
Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary
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Power247TM,
U420B
IRFR P-Channel MOSFET
sfr 135
BALLAST CFL
U210B
U220B
cfl ballast
CFL lamp
Complementary MOSFETs
electronic ballast
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CBVK741B019
Abstract: F63TNR FDC6305N FDC633N
Text: FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and
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FDC6305N
CBVK741B019
F63TNR
FDC6305N
FDC633N
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Untitled
Abstract: No abstract text available
Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V Fast Switching Times RDS on = 5.0 ! Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain
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2N7000BU/2N7000TA
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7121
Abstract: 2N7000TA MOSFET 7121
Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92
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2N7000BU/2N7000TA
7121
2N7000TA
MOSFET 7121
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MOSFET 7121
Abstract: 2N7000BU
Text: Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS on = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92
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2N7000BU/2N7000TA
MOSFET 7121
2N7000BU
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Untitled
Abstract: No abstract text available
Text: FDW2501N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501N
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2N7002
Abstract: 2N7002MTF Small Signal MOSFET
Text: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability
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2N7002MTF
OT-23
2N7002
115mA
2N7002
2N7002MTF
Small Signal MOSFET
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SCHEMATIC POWER SUPPLY WITH IGBTS
Abstract: AN-7508 RUR860 fairchild flyback design 7508 230vac to 30vdc transformer 3kw inverter ac to dc inverter 3kw schematic GS601 SP601
Text: HVIC/IGBT Half-Bridge Converter Evaluation Circuit Application Note May 1992 AN-7508 Author: George Danz Title N91 bt VIC BT lfdge nter aluon t utho The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration
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AN-7508
500VDC.
230VAC
SCHEMATIC POWER SUPPLY WITH IGBTS
AN-7508
RUR860
fairchild flyback design
7508
230vac to 30vdc transformer
3kw inverter ac to dc
inverter 3kw schematic
GS601
SP601
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2N7002MTF
Abstract: 2N7002 Small Signal MOSFET
Text: 2N7002MTF Advanced Small Signal MOSFET FEATURES BVDSS = 60 V ! Lower RDS on RDS(on) = 5.0 Ω ! Improved Inductive Ruggedness ! Fast Switching Times ID = 200 mA ! Lower Input Capacitance ! Extended Safe Operating Area SOT-23 ! Improved High Temperature Reliability
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2N7002MTF
OT-23
2N7002
115mA
2N7002MTF
2N7002
Small Signal MOSFET
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SSS7N60B
Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Text: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP7N60B/SSS7N60B
O-220F
SSS7N60B
SSS7N60B equivalent
SSP7N60B
28A-600
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Untitled
Abstract: No abstract text available
Text: FDW2502P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2502P
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Fairchild MOSFET TSSOP-8 dual n-channel
Abstract: No abstract text available
Text: FDW2501N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501N
Fairchild MOSFET TSSOP-8 dual n-channel
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2503n fairchild
Abstract: No abstract text available
Text: FDW2503N Dual N-Channel 2.5V Specified PowerTrench ™ MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2503N
2503n fairchild
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Untitled
Abstract: No abstract text available
Text: 2N7002MTF N-Channel Small Signal MOSFET FEATURES BVDSS = 60 V Lower RDS on RDS(on) = 5.0 Ω Improved Inductive Ruggedness Fast Switching Times ID = 200 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability
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2N7002MTF
OT-23
2N7002
115mA
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FDC633
Abstract: CBVK741B019 F63TNR FDC633N FDC638P SOIC-16
Text: June 1999 FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDC638P
OT-23
FDC633
CBVK741B019
F63TNR
FDC633N
FDC638P
SOIC-16
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LCD TV SMPS circuit
Abstract: MOSFET 200v 20A n.channel CY63413 laptop lcd inverter Power line load switch for portable dvd china NC7SV158 automatic WATER LEVEL pump CONTROL mosfet triggering circuit for inverter list of P channel power mosfet FQPF18N50
Text: Fairchild New Product Highlights Bottomless SO-8-packaged MOSFETs 20V to 200V 1 • New Product Highlights Discrete Comprehensive New Product List Analog • r t , Normalized Effective Transient
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O-263
FDZ2551N/FDZ2552P/FDZ2553N/FDZ2554P
FDS6572A/FDS6574A
Power247TM,
LCD TV SMPS circuit
MOSFET 200v 20A n.channel
CY63413
laptop lcd inverter
Power line load switch for portable dvd china
NC7SV158
automatic WATER LEVEL pump CONTROL
mosfet triggering circuit for inverter
list of P channel power mosfet
FQPF18N50
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