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    TRANSISTORS PNP 100V 10A Search Results

    TRANSISTORS PNP 100V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS PNP 100V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5740

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5740 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation


    Original     		PDF 2N5740 -100V -100V; 2N5740

    2N5738

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5738 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min.) ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -5A ·Wide Area of Safe Operation


    Original     		PDF 2N5738 -100V -100V; 2N5738

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		PDF JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373

    UP1853G-AA3-R

    Abstract: UTC SILICON PNP 3A TRANSISTORS UP1853
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W


    Original     		PDF UP1853 UP1853G-AA3-R OT-223 QW-R207-019 UP1853G-AA3-R UTC SILICON PNP 3A TRANSISTORS UP1853

    BDV66B

    Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS
    Text: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.


    Original     		PDF BDV66, BDV66A, BDV67A BDV66B, BDV67B BDV66A BDV66B BDV66B BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS

    diode r207

    Abstract: UTC SILICON PNP 3A TRANSISTORS PNP 100V 2A UP1853
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A continuous current , up to 10A peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10A * PD = 3W


    Original     		PDF UP1853 UP1853L UP1853-AA3-R UP1853L-AA3-R UP1853-AA3-T UP1853L-AA3-T OT-223 diode r207 UTC SILICON PNP 3A TRANSISTORS PNP 100V 2A UP1853

    NTE251

    Abstract: Darlington 40A
    Text: NTE251 NPN & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications.


    Original     		PDF NTE251 NTE252 NTE251) NTE252) NTE251 Darlington 40A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS „ FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W


    Original     		PDF UP1853 UP1853L-AA3-R UP1853G-AA3-R OT-223 QW-R207-019

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS  FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W


    Original     		PDF UP1853 UP1853G-AA3-R OT-223 QW-R207-019

    MJ2955

    Abstract: 2N3055 power amplifier circuit 2N3055 power circuit isc MJ2955 transistor 2n3055 application note 2N3055 specification 2n3055 circuit 2n3055 datasheet equivalent transistor 2n3055 power transistor 2n3055
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors MJ2955 DESCRIPTION •Excellent Safe Operating Area ·DC Current Gain: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage: VCE sat = -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055


    Original     		PDF MJ2955 2N3055 25off -100V; MJ2955 2N3055 power amplifier circuit 2N3055 power circuit isc MJ2955 transistor 2n3055 application note 2N3055 specification 2n3055 circuit 2n3055 datasheet equivalent transistor 2n3055 power transistor 2n3055

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


    Original     		PDF NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264

    BDW94

    Abstract: BDW94C BDW94B BDW94A
    Text: SavantIC Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDW93/A/B/C APPLICATIONS ·Hammer drivers, ·Audio amplifiers applications PINNING


    Original     		PDF BDW94/A/B/C O-220C BDW93/A/B/C BDW94 BDW94B BDW94C BDW94A BDW94 BDW94C BDW94B BDW94A

    NTE331

    Abstract: NTE332
    Text: NTE331 NPN & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors in a TO–220 plastic package intended for use in power linear and switching applications.


    Original     		PDF NTE331 NTE332 NTE331 NTE332

    NTE249

    Abstract: SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier
    Text: NTE249 NPN & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.


    Original     		PDF NTE249 NTE250 NTE249 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier

    BDW94C

    Abstract: BDW94 BDW94B BDW94A
    Text: Inchange Semiconductor Product Specification BDW94/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON ・Complement to type BDW93/A/B/C APPLICATIONS ・Hammer drivers, ・Audio amplifiers applications


    Original     		PDF BDW94/A/B/C O-220C BDW93/A/B/C BDW94 BDW94B BDW94C BDW94A BDW94C BDW94 BDW94B BDW94A

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original     		PDF NTE270 NTE271 NTE270

    2SA1010

    Abstract: 2SA10-10 2SC2334 HIGH VOLTAGE POWER PNP TRANSISTORS transistors pnp 100v 10A
    Text: SavantIC Semiconductor Product Specification 2SA1010 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2334 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters


    Original     		PDF 2SA1010 O-220 2SC2334 O-220) VCCB50V 2SA1010 2SA10-10 2SC2334 HIGH VOLTAGE POWER PNP TRANSISTORS transistors pnp 100v 10A

    Untitled

    Abstract: No abstract text available
    Text: 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for


    Original     		PDF 2N3055 MJ2955 200mA 200mA, 400mA 26-July

    BD912

    Abstract: BD910 BD909 BD911 transistors pnp 100v 10A
    Text: SavantIC Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD909 BD911 APPLICATIONS ·Intented for use in power linear and switching applications PINNING PIN DESCRIPTION 1


    Original     		PDF BD910 BD912 O-220C BD909 BD911 BD910 BD912 BD911 transistors pnp 100v 10A

    Untitled

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification BD910 BD912 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD909 BD911 APPLICATIONS ・Intented for use in power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF BD910 BD912 O-220C BD909 BD911 BD910

    NTE390

    Abstract: NTE391
    Text: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.


    Original     		PDF NTE390 NTE391 500mA, NTE390 NTE391

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1 Q 7 9 A 2SB887/2SD1197 NO.1079A F PNP/NPN Planar SiliconDarlington Transistors 100V/10A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers, voltage regulator control Features . High DC current gain


    OCR Scan     		PDF 2SB887/2SD1197 00V/10A 2SB887 Elect000/1 600/1A

    ztx753

    Abstract: ZTX752 ztx751 SE163
    Text: PNP Silicon Planar Medium Power Transistors ZTX750 ZTX752 ZTX751 ZTX753 FEA T U R E S • • • • • • • • • 1.5W power dissipation at T atnb = 2 5 ° C * 2V continuous Iq Excellent gain characteristics to 2A High V CE0: up to 100V Low saturation voltages


    OCR Scan     		PDF ZTX750 ZTX752 ZTX751 ZTX753 ZTX752 SE170 ztx753 SE163

    2N6282

    Abstract: 2N6284 2N6285 2N6287 2N6283 2N6286 30yA
    Text: DARLINGTON COMPLEMETARY SILICON POWER TRANSISTORS .designed for use general-purpose Amplifier and low -frequency switching applications. Boca Semiconductor Corp BSC http://www.bocasemi.com FEATURES * High DC Current Gain@lc= 10A hFE= 2400 Typ - 2N6282,2N6283,2N6284


    OCR Scan     		PDF 2N6282 2N6283 2N6284 2N6286 2N6287 -2N6282 2N6285 -2N6283 2N6286 -2N6284 2N6284 2N6285 2N6287 30yA