Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTORS FOR POWER Search Results

    TRANSISTORS FOR POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS FOR POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STA471A

    Abstract: pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent
    Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors


    Original
    PDF 2SA1725/2SC4511 15max. STA471A pnp DARLINGTON TRANSISTOR ARRAY 2sa1694 2sc4467 2SC4153 equivalent NPN DARLINGTON TRANSISTOR ARRAY sib1044d 2SA1186 2SC2837 sta481a 2SC5287 equivalent 2SA1494 equivalent

    transistor

    Abstract: audio amplifier POWER TRANSISTORS Transistors Transistor Arrays FILE TRANSISTOR horizontal transistor
    Text: 2 Power Transistors 2-1. Power Transistors Transistors for Audio Amplifier • Transistors for Switch Mode Power Supply • Transistors for Humidifier • Transistor for Display Horizontal Deflection Output • Darlington Transistors • Low VCE sat • High h FE Transistors


    Original
    PDF

    2SC5586

    Abstract: 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09
    Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14


    Original
    PDF AC10A5021 SLA5058 SLA5081 SLA5055 SLA5088 SLA5046 SLA5049 SLA5070 SLA5054 SLA5057 2SC5586 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09

    audio power amplifiers with transistors

    Abstract: 5-phase stepper driver
    Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14


    Original
    PDF

    2SC5586

    Abstract: 2SC5586 equivalent 2SC5487 SAP16 sla 1003 SAP16N 2SA2003 transistor 2SC5586 sla6024 2SC5586 DATASHEET
    Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14


    Original
    PDF TM1641B-L TM2541B-L TM361S-R TM361M-L TM361S-L TM561S-R TM561M-L TM561S-L TM861M-L TM861S-L 2SC5586 2SC5586 equivalent 2SC5487 SAP16 sla 1003 SAP16N 2SA2003 transistor 2SC5586 sla6024 2SC5586 DATASHEET

    Y parameters of transistors

    Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
    Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .


    Original
    PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor

    BU407

    Abstract: No abstract text available
    Text: BU407 Power Transistor CRT Deflection Transistors Feature: NPN bipolar power transistors for use in high voltage, high speed transistors for horizontal deflection circuits of TVs and CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications.


    Original
    PDF BU407 O-220 BU407

    BU407

    Abstract: No abstract text available
    Text: BU407 Power Transistor CRT Deflection Transistors Features: • NPN bipolar power transistors for use in high voltage, high speed transistors for horizontal deflection circuits of TVs and CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications.


    Original
    PDF BU407 O-220 BU407

    X200C

    Abstract: SD4100
    Text: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    Original
    PDF SD1439 SD1449 SD1437 SD1448 SD4011 SD1732 SD4010 SD1490 TCC596 X200C SD4100

    power transistors cross reference

    Abstract: TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492
    Text: SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    Original
    PDF SD1448 SD4011 SD1489 SD1492 SD4100 TSD4200 TCC596 SD1439 TCC597 SD1449 power transistors cross reference TSD4200 TCC596 tcc593 M119 M122 SD1448 SD1489 SD1490 SD1492

    cfl low loss drive

    Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
    Text: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer


    Original
    PDF vol92 OT186A O220AB OT428) cfl low loss drive phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT

    NTE323

    Abstract: NTE324
    Text: NTE323 PNP & NTE324 (NPN) Silicon Complementary Transistors General Purpose Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier


    Original
    PDF NTE323 NTE324 250mA 250mA, 100mA, 10MHz 200mA, NTE323 NTE324

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original
    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    IMD10A

    Abstract: T108
    Text: IMD10A Transistors Power management dual digital transistors IMD10A zDimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5)


    Original
    PDF IMD10A 500mA SC-74 IMD10A T108

    IMD16A

    Abstract: D16 marking code transistor T108 MARKING T108
    Text: IMD16A Transistors Power management dual digital transistors IMD16A zDimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. ROHM : SMT6


    Original
    PDF IMD16A 500mA SC-74 IMD16A D16 marking code transistor T108 MARKING T108

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors NST3946 General purpose transistors dual transistors DESCRIPTION It is designed for general purpose amplifier applications . By putting two Discrete devices in one package , this device is ideal for low – power surface


    Original
    PDF OT-563 NST3946 OT-563 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: IMD10A Transistors Power management dual digital transistors IMD10A Dimensions (Unit : mm) Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5) (6)


    Original
    PDF IMD10A 500mA SC-74

    Philips Semiconductors Selection Guide

    Abstract: LTE42005S BLS2731-10
    Text: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR


    OCR Scan
    PDF RX1214B80W RX1214B130Y RX1214B170W RX1214B300Y RX1214B350Y RZ1214B35Y RZ1214B65Y BLS2731-10 BLS2731-20 BLS2731 Philips Semiconductors Selection Guide LTE42005S

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan
    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    XM122

    Abstract: No abstract text available
    Text: SFJIIIS SILICON POWER TRANSISTORS UHF TV/LINEAR TRANSISTORS SGS-THOMSON UHF TV/Linear transistors are specifically designed for television broadcast transmitters requiring ultra high linearity. Refractory/gold metallization is employed for maximum device ruggedness and high efficiency microwave


    OCR Scan
    PDF SD1439 SD1449 SD1437 SD1448 SD4011 SD1732 SD4010 SD1490 TCC596 TCC597 XM122

    4120PL

    Abstract: TEKELEC 302 BLV958FL sot391 BLV958 A11Z SQL5 Tekelec BLV95 68479 wire
    Text: Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching, high gain and efficiency NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors


    OCR Scan
    PDF BLV958; BLV958FL OT391A OT391B -SOT391A -SOT391 4120PL TEKELEC 302 BLV958FL sot391 BLV958 A11Z SQL5 Tekelec BLV95 68479 wire

    Untitled

    Abstract: No abstract text available
    Text: BCX54 BCX55 BCX56 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic package intended for applications in thick and thin-film circuits. These transistors are intended fo r general purposes as well as for use in driver stages


    OCR Scan
    PDF BCX54 BCX55 BCX56 BCX51, BCX52 BCX53

    Untitled

    Abstract: No abstract text available
    Text: IMD10A Transistors I Digital Transistor Dual Digital Transistors for power Management IMD10A • A b so lute maximum ratings (Ta=25°C ) •Features 1 ) Two 500 m A transistors are housed in an S M T package. 2 ) Up to 500 m A can be driven. 3 ) Low VcE(sat) of drive transistors for low power dissipation.


    OCR Scan
    PDF IMD10A 001723b