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    TRANSISTORS 132 GD Search Results

    TRANSISTORS 132 GD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS 132 GD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pt1017

    Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253


    Original     		PDF El00-KIT-ND J200-KIT-ND 1600-KIT-ND 1601-KIT-ND 1602-KIT-ND 1603-KIT-ND 1604-KIT-ND 923000-I-ND 10514-ND 10522-ND pt1017 mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490

    B150A

    Abstract: B250D B500D spice model PNP UHF B1000A B250A pnp 8 transistor array ttl B500A
    Text: Analog ASICs Introduction TEMIC has been developing customer specific integrated circuits for more than 20 years. In the field of analog ASICs, numerous ASIC developments covering communication, data processing, measurement, household, consumer, industrial, military and space, and automotive have created an extensive know-how. These


    Original     		PDF 22-Feb-95 B150A B250D B500D spice model PNP UHF B1000A B250A pnp 8 transistor array ttl B500A

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    rkm 33 transistor

    Abstract: g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A IMH11A IMH14A IMH15A rkm 33 transistor g1k bc848b rkm transistor DTB133HKA DTD133HKA MMST8598 TRANSISTOR MARKING CODE R2A rkm 35 transistor 2SA1885 marking W8 transistor

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


    Original     		PDF

    FDPF 33N25T

    Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
    Text: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V


    Original     		PDF FDP33N25 FDPF33N25 FDPF33N25 FDPF33N25T FDPF 33N25T 33N25T 33n25 diode marking 33a on semiconductor marking 33a on semiconductor

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Mitsubishi transistor rf final

    Abstract: M57729
    Text: MITSUBISHI RF POWER MODULE M57729 430-450MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING 66+ 1 60 ± 1 2 -R 2 ±0 .3 V / w GD 0 0.8 ± 0.2 12±1 16.5±1 PIN : 33 ±1 © P in : RF INPUT ©VCC1 ; 1st. DC SUPPLY © V C C2 : 2nd. DC SUPPLY


    OCR Scan     		PDF M57729 430-450MHZ, Mitsubishi transistor rf final M57729

    2SC3219

    Abstract: x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC HF G 3SE J> m 023.^307 GDGOaifl G ISHE J age * Ultra High Speed Switching Transisto F3 series 0 1 pel EIAJ No. » tt Ä * S fc Absolute Maximum Ratings £ Type No. Vcbo VCEO VEBO 3220 • lo IB PT Tstg IJ [•c ] DcJ V oeo


    OCR Scan     		PDF 2SC3219 T6V20F3 T10W20F3 T6M20F3 T10M20F3 TP3V45FX y4053 T5V45FX TP5V45FX T8V45FX x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3

    IRF150

    Abstract: R01E MOSFET IRF150 7S001 IRF151 IRF152 IRF153 IRF162 IRF160
    Text: OÏ 3875081 D Ë J 3075001 UG1Û27M 5 | “~ G E SOLID ST A TE _ 01E - — -File Number 18274 . , D Standard Power MOSFETs IRF150, IRF151, |RF152, IRF153


    OCR Scan     		PDF 7S001 IRF150, IRF151, RF152, IRF153 IRF152 IRF153 IRF150 R01E MOSFET IRF150 IRF151 IRF162 IRF160

    kvp smd

    Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
    Text: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD


    OCR Scan     		PDF 600mA 220mA 200mA 175mA 150mA 100mA 500mA kvp smd kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id


    OCR Scan     		PDF XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14

    Untitled

    Abstract: No abstract text available
    Text: 0 7 7 3 2 ^ GDD3322 443 blE D SUPERTEX INC ISTX 0 Supertex inc. High-Voltage Integrated Circuit Custom Design and Process Capabilities HVIC Custom Capabilities By design, our logic circuitry is particularly latch-up resistant for increased reliability in noisy environments. This is especially


    OCR Scan     		PDF GDD3322

    TRANSISTORS 132 GD

    Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
    Text: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. RF152, RF153 TRANSISTORS 132 GD IRF150 kiv-8 IRF151 circuits of IRF150

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


    OCR Scan     		PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    Untitled

    Abstract: No abstract text available
    Text: FSJ260D, FSJ260R S e m iconductor 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 44A, 200V, rQs^oN = 0.050£2 The D iscrete Products Operation of Harris Sem iconductor has developed a series of R adiation Hardened M O SFETs


    OCR Scan     		PDF FSJ260D, FSJ260R MIL-S-19500

    2SC2407 equivalent

    Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The


    OCR Scan     		PDF L4H7414 NE416 for23 2SC2407 equivalent 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600

    p6020

    Abstract: TIP664 TIP-663 TIP663 TIP-665
    Text: TEXAS IN STR ~b2 -COPTO 8 9 6 1 7 2 6 TEXAS INS TR D l F | fl'iblTHL: □ □ 3 b cl ci0 1 <OPTO 62C 3 6 9 9 0 TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 198 4 • 150 W at 100 ° C C ase Temperature T-33-29


    OCR Scan     		PDF TIP663, TIP664, TIP665 hFE---250 T-33-29 p6020 TIP664 TIP-663 TIP663 TIP-665

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


    OCR Scan     		PDF L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592

    y112

    Abstract: BGY112A BGY112B BGY112C DD302
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSa^l GQ3QSÖD T4M M A P X Philips Components Data sheet status Preliminary specification date of issue May 1991 B G Y 1 1 2 A/1 1 2 B/1 1 2 C VHF amplifier modules PINNING - SOT288C DESCRIPTION A range of RF power amplifier


    OCR Scan     		PDF /112B/112C BGY112A BGY112B BGY112C bbS3R31 DD302Ã BGY112A/112B/112C OT288C. y112 BGY112C DD302

    32khz crystal oscillator

    Abstract: No abstract text available
    Text: Section 13 H8/3814 Series Electrical Characteristics 13.1 H8/3814 Series Absolute Maximum Ratings Table 13-1 lists the absolute maximum ratings. Table 13-1 Absolute Maximum Ratings Item Symbol Value Unit Power supply voltage Vcc -0 .3 to +7.0 V Analog power supply voltage


    OCR Scan     		PDF H8/3814 00bl7GS 00bl707 00bl70Ã 44Tb2G4 32khz crystal oscillator

    transistor A431

    Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a

    7 amps pnp transistor

    Abstract: 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module
    Text: E C I SEMICONDUCTOR MAE D • 305fl7b7 0 0 0 0 D7 4 Oôb « E C I S -jy DESCRIPTION The ECI Semiconductor EM series has been generated to provide cost and space effective high performance analog system solutions in silicon for your specific application. The EM family of low-cost 30v Bipolar Gridded Semicustom Arrays is


    OCR Scan     		PDF 302A7L7 0D00074 302fl7b7 7 amps pnp transistor 7S1 zener diode transistor C 4231 EM-83 ic for hearing aid operational amplifier discrete schematic pnp darlington array EM-21 DARLINGTON ARRAYS Darlington Independent Power Module