PDTA144E
Abstract: PDTA144
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144EU NPN resistor-equipped transistor Objective specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 1998 May 18 Philips Semiconductors Objective specification NPN resistor-equipped transistor
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M3D102
PDTC144EU
SC-70;
OT323
PDTA144EU.
SCA60
115104/1200/02/pp8
PDTA144E
PDTA144
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IC500A
Abstract: t0800ta45e D-68623 T0800 transistor D 982
Text: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate
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T0800TA45E
T0800TA45E
IC500A
D-68623
T0800
transistor D 982
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800EB45G
T0800EB45G
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T0800EB
Abstract: No abstract text available
Text: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800EB45G
T0800EB45G
T0800EB
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800TB45E
T0800TB45E
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T0800TB45E
Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
Text: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800TB45E
T0800TB45E
T0800
D-68623
S200N
d686
IGBT 800
cr 406 transistor
E0900NC45C
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T0850VB
Abstract: No abstract text available
Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0850VB25E
T0850VB25E
T0850VB
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 21 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0850VB25E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0850VB25E
T0850VB25E
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T0800EB
Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
Text: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0800EB45G
T0800EB45G
T0800EB
2008AN01
T0800
transistor P1 P 12
MAR 208 transistor
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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transistor t08
Abstract: 1S97 t08 transistor marking CODE 68 transistor PDTC144EU tam resistor marking code t08
Text: Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS
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SC-70;
OT323
PDTA144EU.
PDTC144EU
OT323)
transistor t08
1S97
t08 transistor
marking CODE 68 transistor
PDTC144EU
tam resistor
marking code t08
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2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
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2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
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3SK121
Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Text: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160
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3SK126
3SK160
3SK121
3SK198
3SK140
3SK146
3SK199
3SK114
3SK159
3SK152
3SK121
SC4251
3SK150
S47B
3SK140
3SK152
1SS241
DLP238
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igbt circuit for induction melting
Abstract: TX116TA17E McMurray induction melting IGBT presspack T180 T2400GA45E tx116 snubbers
Text: An □ IX VS Company As a pioneer of press-pack Insulated Gate Bi-polar Transistor technology W estcode is able to offer a range of class leading devices with voltage ratings of 2.5 kV 1.25 kV DC link , 4.5 kV (2.8 kV DC link) and 1.7 kV currently in development.
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D-68623
igbt circuit for induction melting
TX116TA17E
McMurray
induction melting
IGBT presspack
T180
T2400GA45E
tx116
snubbers
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A21E
Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
Text: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.
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Q62702-F1104
A21E
ZO 103 MA 7A 425
BFQ 58
BFQ 51
s4 marking code siemens
ZO 103
transistor BFQ 263
zo 107
transistor ZO 103 MA
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logos 4012B
Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX
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TDA1510
TDA1510A
logos 4012B
1LB553
Rauland ETS-003
Silec Semiconductors
MCP 7833
4057A
transistor sr52
74c912
1TK552
74S485
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Transistor C107m
Abstract: t25000 SCR TRANSISTOR 8TA41600B T106F1 SCR SC160D TIC106M SCR SC136B Triac Q2006R5 BTA417008
Text: "'ART VJMEEF INDEX Part No. 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N40Q7 1N4622 1N4732 1N4733 1N4744 1N5225 1N5400 1N5401 1N5402 1N5404 1N5405 1N5625 1N750 2N0918 2N1770 2N1771 2N1772 2N1773 2N1774 2N1775 2N1776 2N1777 2N1778 2N1842 2N1843 2N1844 2N1845
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N40Q7
1N4622
1N4732
1N4733
Transistor C107m
t25000
SCR TRANSISTOR
8TA41600B
T106F1 SCR
SC160D
TIC106M SCR
SC136B Triac
Q2006R5
BTA417008
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TAB429H
Abstract: TD62803 tab429 p605 diode TA76494P ta7259 T*429H toshiba 8429H ta8102 p605 ic
Text: 2. MOTOR CON TRO L/D RIVE CIRCUIT LINE UP 2-1 Solenoids/A ctuator Driver IC ’s Various pow er operational am plifiers are available as linear actu a to r drivers for driving VCM, etc. T ransistor arrays fo r driving solenoids and relays as reactance loads.
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TD62603P/F
TD62604P/F
TD62382AP/F
TD62551S
TD62555S
62501P/F
TD62507P/F
TD62301P/F
TD62302P/F
TD62306P/F
TAB429H
TD62803
tab429
p605 diode
TA76494P
ta7259
T*429H toshiba
8429H
ta8102
p605 ic
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSlS M5M51T08AFP,VP,RV-85VSL,-10VSL p H U lS N A R V 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance quadruple-polysilicon CMOS technology. The
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M5M51T08AFP
RV-85VSL
-10VSL
1048576-BIT
131072-WQRD
M5M51
T08AFP
131072-word
M5M51T08AVP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P ,V P ,R V -1 2 V S L ,-1 5 V S L _1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM No«-0 ‘ ¿met'* r': DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using
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1048576-BIT
131072-WORD
M5M51
T08AFP
1048576-bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51 T08AFP,VP,RV-85VSL,-1 OVSL p R tì-' 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM SO'" 1 1‘ DESCRIPTION The M 5M 51T08A FP,VP,RV are a 1048576-bit C M O S static RAM PIN CONFIGURATION (TOP VIEW) organized as 131072-w ord by 8 -bit which are fabricated using
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M5M51
T08AFP
RV-85VSL
1048576-BIT
131072-WORD
51T08A
1048576-bit
131072-w
32-pin
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x -12sl
Abstract: No abstract text available
Text: • bSMRf l es DD24S74 D3 1 ■ M IT I MITSUBISHILSls M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5M 51T08AP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are
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DD24S74
M5M51
T08AP
RV-70SL
-85SL
-10SL
-12SL
1048576-BIT
131072-WQRD
51T08AP
x -12sl
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