TRANSISTOR SMS Search Results

TRANSISTOR SMS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR SMS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	PDF	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Untitled Abstract: No abstract text available Text: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface	Original	PDF	MSD1819A-RT1G, SMSD1819A-RT1G SC-70/SOT-323 MSD1819Aâ
Untitled Abstract: No abstract text available Text: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface	Original	PDF	MSD1819A-RT1G, SMSD1819A-RT1G SC-70/SOT-323 AEC-Q101 SC-70 OT-323) MSD1819A-RT1/D
SMSD1819 Abstract: No abstract text available Text: MSD1819A-RT1G, SMSD1819A-RT1G General Purpose Amplifier Transistor NPN Silicon Surface Mount http://onsemi.com This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface	Original	PDF	MSD1819A-RT1G, SMSD1819A-RT1G SC-70/SOT-323 AEC-Q101 SC-70 OT-323) MSD1819A-RT1/D SMSD1819
318d Abstract: No abstract text available Text: MSD602-RT1G, SMSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable	Original	PDF	MSD602-RT1G, SMSD602-RT1G MSD602â 318d
DIN 3021-3 STANDARD Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp Text: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6	Original	PDF	30213-EN-070201 DIN 3021-3 STANDARD DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
Untitled Abstract: No abstract text available Text: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • SC−59 CASE 318D	Original	PDF	MSD602-RT1G, SMSD602-RT1G MSD602â
PPAP MANUAL Abstract: No abstract text available Text: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • SC−59 CASE 318D	Original	PDF	MSD602-RT1G, SMSD602-RT1G AEC-Q101 SC-59 MSD602-RT1/D PPAP MANUAL
SMSD602-RT1G Abstract: No abstract text available Text: MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  SC−59 CASE 318D	Original	PDF	MSD602-RT1G, SMSD602-RT1G AEC-Q101 SC-59 MSD602-RT1/D SMSD602-RT1G
SMS2020 Abstract: MosFET Text: SMS2020 830mA, 20V N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and	Original	PDF	SMS2020 830mA, OT-23 SMS2020 21-May-2013 MosFET
SMS6001 Abstract: MosFET Text: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and	Original	PDF	SMS6001 440mA, OT-23 SMS6001 27-Jan-2014 MosFET
NPN transistor 2n3904 beta value Abstract: bjt 2N3904 2N3904 npn bjt transistor 2n3904 npn fairchild beta MMBT3904FSCT 2N3904 transistor equivalent BJT 2n3904 temp sensor 2n3904 equivalent transistor of 2n3904 TRANSISTORS BJT list Text: AN 12.14 Remote Thermal Sensing Diode Selection Guide 1 Preface This application note provides guidance to designers of systems that use thermal sensors with remote diodes. A discrete bipolar junction transistor BJT is commonly used as the remote diode. This	Original	PDF	EMC1002. NPN transistor 2n3904 beta value bjt 2N3904 2N3904 npn bjt transistor 2n3904 npn fairchild beta MMBT3904FSCT 2N3904 transistor equivalent BJT 2n3904 temp sensor 2n3904 equivalent transistor of 2n3904 TRANSISTORS BJT list
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am	OCR Scan	PDF	BLW76 7Z78092

2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
SOT123 Package Abstract: SOT123 BLF244 International Power Sources SOT-123 Text: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability	OCR Scan	PDF	BLF244 711002b OT123 7110fi5b T-39-11 SOT123 Package SOT123 BLF244 International Power Sources SOT-123
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: International P D - 9.1032 ^R ectifier IRGPC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve	OCR Scan	PDF	IRGPC30U 100pical 5545E O-247AC
Untitled Abstract: No abstract text available Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5321 HIGH VOLTAGE AND HIGH RELIABILITY • High speed Switching • Wide Safe Operating Area ABSO LU TE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage Vceo 800 V Collector Emitter Voltage	OCR Scan	PDF	KSC5321
PS3906 Abstract: MPS3906 transistor sms Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor M PS3906 PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value v CEO ^ to Collector-Base Voltage VCBO Emitter-Base Voltage Unit Vdc Vdc v EBO -5.0 Vdc	OCR Scan	PDF	PS3906 AN-569. PS3906 MPS3906 transistor sms
M113 Abstract: t4bu SD1013-3 Text: m âWt* Pr&<iuvt$ m Micmsemi 140 Commerce Drive Wlontgomeryviile, PA 18936-1013 Tel: 215 831-9840 SD1013-3 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 150MHz VOLTAGE 2SV POWER OUT 10W POWER GAIN 10dB EFFICIENCY 55%TYP	OCR Scan	PDF	150MHz SD1013-3 108-152MHz M113 t4bu SD1013-3
BUH713 Abstract: No abstract text available Text: SGS-THOMSON IM O e œ iL i © « BU H 713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. F ILE # E81734(N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR	OCR Scan	PDF	ISOWATT218 E81734 BUH713

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TRANSISTOR SMS Search Results

TRANSISTOR SMS Result Highlights (5)

TRANSISTOR SMS Datasheets Context Search

MN1280

oz960

Untitled

Untitled

SMSD1819

318d

DIN 3021-3 STANDARD

Untitled

PPAP MANUAL

SMSD602-RT1G

SMS2020

SMS6001

NPN transistor 2n3904 beta value

Untitled

2N2222A 338

y51 h 120c

sx3704

SOT123 Package

Transistor 2SA 2SB 2SC 2SD

Untitled

Untitled

PS3906

M113

BUH713