FJY3005R
Abstract: FJY4005R transistor s55
Text: FJY4005R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=10KΩ • Complement to FJY3005R Eqivalent Circuit C C S55 E B E B SOT - 523F Absolute Maximum Ratings *
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FJY4005R
FJY3005R
FJY3005R
FJY4005R
transistor s55
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FJY3005R
Abstract: FJY4005R transistor s55
Text: FJY4005R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1=4.7KΩ, R2=10KΩ • Complement to FJY3005R Equivalent Circuit C C S55 E B E B SOT - 523F Absolute Maximum Ratings *
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FJY4005R
FJY3005R
FJY3005R
FJY4005R
transistor s55
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2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
B132-H8248-G5-X-7600
2sc3052ef
2n2222a SOT23
TRANSISTOR SMD MARKING CODE s2a
1N4148 SMD LL-34
TRANSISTOR SMD CODE PACKAGE SOT23
2n2222 sot23
TRANSISTOR S1A 64 smd
1N4148 SOD323
semiconductor cross reference
toshiba smd marking code transistor
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very simple walkie talkie circuit diagram
Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
very simple walkie talkie circuit diagram
blf278 models
walkie talkie circuit diagram
simple walkie talkie circuit diagram
SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6
BF245c spice model
smd TRANSISTOR code marking 8K
MOBILE jammer GSM 1800 MHZ
BSS83 spice model
smd TRANSISTOR code marking 7k sot23
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Untitled
Abstract: No abstract text available
Text: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
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BFQ67/BFQ67R/BFQ67W
BFQ67
BFQ67R
BFQ67W
20-Jan-99
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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KS621K30
Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V
Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS621K30
Amperes/1000
KS621K30
transistor S56
transistor s55
lem lc 300
KS621
powerex ks62
transistor VCEO 1000V
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E67349
Abstract: TLP631 TLP632
Text: TOSHIBA TLP631JLP632 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP631, TLP632 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP631 and TLP632 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a
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TLP631
TLP632
TLP631,
TLP632
5000Vrms
UL1577,
E67349
E67349
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ks621k30
Abstract: No abstract text available
Text: KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1600 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts O U T L I N E D R A W IN G Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K30
Amperes/1000
KSS21K30
ks621k30
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CM25-28
Abstract: UMI125 UMIL25 UM1L25 UM1L2 DDD1117 UMIL60 Scans-00115691
Text: 0 1 8 2 9 9 8 ACRI AN INC DE DDDlli? S T —2 3 - S 3 S55HI2IKS80 CRIAN GENERAL DESCRIPTION UMIL25 The UMIL25 is an internally matched UHF transistor designed for the 200-500 MHz frequency range. It may be operated in Class A, AB or C and features gold thin film
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DTj01fl2â
DDD1117
UMIL25
CM25-28.
-65to
01fl2c
T-33-13
UM1L25
CM25-28
UMI125
UM1L25
UM1L2
UMIL60
Scans-00115691
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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C160120
Abstract: transistor 2SK2750 2SK2750
Text: TOSHIBA 2SK2750 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2750 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0.3 r •
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2SK2750
C160120
transistor 2SK2750
2SK2750
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rde 090
Abstract: BFJ309LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifier Transistor N-Channel MMBFJ309LT1 MMBFJ310LT1 2 SOURCE GATE 1 DR AIN MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VGS 25 Vdc ta 10 mAdc Symbol Max Unit
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MMBFJ309LT1
MMBFJ310LT1
rde 090
BFJ309LT1
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2-10P1B
Abstract: 2SK2661 L122M l67c
Text: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03 .610.2
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2SK2661
-l-35il
2-10P1B
2SK2661
L122M
l67c
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2N7221 JANTX
Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Text: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 JANTX2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFM340
JANTXV2N7221
MIL-S-19SOO/59S]
irfm340d
irfm340u
O-254
MIL-S-19500
I-332
2N7221 JANTX
IQR 2400
2N7221
IRFM340
JANTXV2N7221
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2SC3329
Abstract: m 3329 2SA1316
Text: TO SH IBA 2SC3329 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3329 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS . 5.1 MAX. • Very Low Noise in the Region of Low Signal Source Impedance
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2SC3329
2SA1316
2SC3329
m 3329
2SA1316
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage
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MMBT6427LT1
-236A
b3b7255
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RC723DP
Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Text: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525
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/2525A
/3525A
/2527A
/3527A
523/3523A
RC723DP
SN72748L
MC7805G
LM340H-05
SG3525 equivalent
transistor KT 209 M
78M15HM
SN52107L
SG711
SG7812CK
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2SC3605
Abstract: No abstract text available
Text: T O S H IB A 2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS . 5.1 M AX. FEATURES : • Low Noise Figure, High Gain • NF = l.ldB, |S 2lel 2 = lOdB f = 1GHz 0.45 0.55 M AX.
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2SC3605
SC-43
2SC3605
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SB1375 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 375 Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER • 10 ì 0.3 Low Saturation Voltage : V c e sat = —1-5V (Max.) (IC = - 2 A , IB = —0.2A) High Power Dissipation : P q = 25W (Tc = 25°C)
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2SB1375
2SD2012
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TC-8008
Abstract: 2SJ355 xz43
Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)
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2SJ355
2sj355tip51-p^
iei-620)
TC-8008
2SJ355
xz43
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EB-230
Abstract: PA603T mpa603t 048164 IC830
Text: MOS MWRlto MOS Field Effect Transistor «PA603T U MOS F E T 6 fc> 2 0 S&) P ¿¿PA603T (ä, M OS F E T £ 2 H Jj& f ijl Ltz l ~ £ f 7f £ H I (^ -fï ‘ mm) & 4# o SC-59 ¿[p] L'+f'f Xcos'?"/ Y — 'si MOS F E T £ 2 H i& f lji 0.95 o ¿/PA602T t 3 > 7 ° ij / 's 9 ') T"i£ffl^Tit£
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uPA603T
PA603T
SC-59
/PA602T
EB-230
PA603T
mpa603t
048164
IC830
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s0t23
Abstract: LNA SOT23-6 AX2232 MAX2611 SOT23-6 AM oscillator 6pin 63 sot23 6pin AB SOT23-10
Text: Build Your Radio with Maxim’s Wide • Add Flexibility to Your New or Existing Design • Save Board Space over Discrete Designs but Maintain Design Flexibility • Achieve Faster Time-to-Market wideband DOW N' G A IN ' <S55&cc DUAL IF V C O BUFFER Low-Noise Amplifiers
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MAX2640
MAX2641
AX2651+
X2652Ì
900MHz)
1900MHz)
MAX2620
MAX2450
MAX2451
MAX2452
s0t23
LNA SOT23-6
AX2232
MAX2611
SOT23-6 AM
oscillator 6pin
63 sot23 6pin
AB SOT23-10
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