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    TRANSISTOR P2 MARKING Search Results

    TRANSISTOR P2 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR P2 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFR92

    Abstract: BFR92A BFR92 transistor transistor p2 marking
    Text: BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR • ■ ■ Type Marking BF R92 P1 BFR92A P2 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GOLD METALLIZED TRANSISTOR FOR HIGH GAIN AND LOW NOISE,


    Original     		PDF BFR92 BFR92A OT-23 BFR92A BFR92 transistor transistor p2 marking

    FMMT591A

    Abstract: FCX491A FCX591A MARKING 93 SOT89 DSA003685
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FCX591A ISSUE 3 - OCTOBER 1995 PART MARKING DETAIL COMPLEMENTARY TYPE - C P2 FCX491A B ABSOLUTE MAXIMUM RATINGS. C E PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO


    Original     		PDF FCX591A FCX491A -100mA -500mA -20mA* -100mA* -50mA* -500mA* -50mA, FMMT591A FCX491A FCX591A MARKING 93 SOT89 DSA003685

    telefunken IC

    Abstract: marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392
    Text: S 392 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency Dimensions in mm Marking: P2 Plastic case SOT 23 Absolute Maximum Ratings


    Original     		PDF D-74025 telefunken IC marking p2 Telefunken MA 2831 telefunken s 150 ic MA 2831 1s392

    BFR92A

    Abstract: sot-23 transistor p2 marking BFR92AR
    Text: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking: + P2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		PDF BFR92A/BFR92AR BFR92A BFR92AR D-74025 17-Apr-96 sot-23 transistor p2 marking

    4P0413

    Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
    Text: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4-13 PG-TO252-3-313 4P0413 -10V2) 4P0413 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413

    4P04L06

    Abstract: smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag
    Text: Final Data Sheet IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 6.4 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4L-06 IPI80P04P4L-06, IPP80P04P4L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4L-06 4P04L06 smd diode UM 08 smd diode 104 smd diode marking DD DIODE smd marking Ag

    4P0405

    Abstract: IPB80P04P4-05 ipi80p04p4-05 IPP80P04P4-05 PG-TO-220-3-1
    Text: Final Data Sheet IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 4.9 mW ID -80 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1


    Original     		PDF IPB80P04P4-05 IPI80P04P4-05, IPP80P04P4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80P04P4-05 4P0405 IPP80P04P4-05 PG-TO-220-3-1

    4p03L11

    Abstract: No abstract text available
    Text: IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on ,max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P03P4L-11 PG-TO252-3-11 4P03L11 -10V1) -10V2) 4p03L11

    4P03L07

    Abstract: smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse
    Text: IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 6.9 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L07 IPI80P03P4L-07 4P03L07 smd diode UM 07 DIODE smd marking Ag 4p03 4p03l IPB80P03P4L-07 IPI80P03P4L-07 IPP80P03P4L-07 PG-TO263-3-2 optimos battery protection reverse

    4P03L04

    Abstract: 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l
    Text: IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on (SMD Version) 4.1 mΩ ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4P03L04 IPI80P03P4L-04 4P03L04 4p03 IPB80P03P4L-04 146a marking diode DIODE smd marking Ag PG-TO263-3-2 IPI80P03P4L-04 IPP80P03P4L-04 4p03l

    IPP120P04P4-04

    Abstract: 340ua IPI120P04P4-04 4P04
    Text: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4-04 IPP120P04P4-04 340ua 4P04

    4P04L11

    Abstract: INFINEON marking
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 INFINEON marking

    4P04L11

    Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 PG-TO252-3-313 4P04L11 -10V1) -10V2) 726-IPD50P04P4L-11 4P04L11 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50

    4P04L11

    Abstract: IPD50P04P4L-11
    Text: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P04P4L-11 PG-TO252-3-313 4P04L11 -10V1) -10V2) 4P04L11 IPD50P04P4L-11

    4p03L11

    Abstract: IPD50P03P4L-11 PG-TO252-3-11 optimos battery protection reverse 4p03l
    Text: IPD50P03P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -30 V R DS on ,max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD50P03P4L-11 PG-TO252-3-11 4P03L11 -10V1) -10V2) 4p03L11 IPD50P03P4L-11 PG-TO252-3-11 optimos battery protection reverse 4p03l

    4P04L03

    Abstract: IPP120P04P4L-03 IPB120P04P4L-03
    Text: IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.1 mW ID -120 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB120P04P4L-03 IPI120P04P4L-03, IPP120P04P4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI120P04P4L-03 4P04L03 IPP120P04P4L-03

    Untitled

    Abstract: No abstract text available
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2)

    4QP04L02

    Abstract: IPB180P04P4L-02
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4L-02 Product Summary V DS -40 V R DS on ,max 2.4 mW ID -180 Features A PG-TO263-7-3 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4L-02 PG-TO263-7-3 4QP04L02 -10V1) -10V2) 410uA 4QP04L02 IPB180P04P4L-02

    4QP04L02

    Abstract: IPB180P04 IPB180P04P4L-02 IPB180P04P4L
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4L-02 Product Summary V DS -40 V R DS on ,max 2.4 mW ID -180 Features A PG-TO263-7-3 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4L-02 PG-TO263-7-3 4QP04L02 -10V1) -10V2) 410uA 4QP04L02 IPB180P04 IPB180P04P4L-02 IPB180P04P4L

    Untitled

    Abstract: No abstract text available
    Text: BSL215P OptiMOS P2 Small-Signal-Transistor Product Summary Features VDS • Dual P-channel RDS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V VGS=-4.5 V 150 mW VGS=-2.5 V 280 ID -1.5 • Avalanche rated A PG-TSOP6 • Qualified according to AEC Q101


    Original     		PDF BSL215P IEC61249-2-21 H6327:

    IPB180P04

    Abstract: ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4
    Text: Final Data Sheet OptiMOS -P2 Power-Transistor IPB180P04P4-03 Product Summary V DS -40 V R DS on 2.8 mW ID -180 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB180P04P4-03 PG-TO263-7-3 4QP0403 -10V2) IPB180P04 ipb180p D180A IPB180P04P4-03 SMD MARKING QG 6 PIN 73 marking ipb180p04p4

    BFR92

    Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
    Text: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR


    OCR Scan     		PDF BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor

    MAR 641 TRANSISTOR

    Abstract: transistor MAR 543 MAR 737 ic BFR92AR BFR92A mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737
    Text: Tem ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23


    OCR Scan     		PDF BFR92A/BFR92AR BFR92A BFR92AR 26-Mar-97 26-Mar MAR 641 TRANSISTOR transistor MAR 543 MAR 737 ic mar 727 1646 IC 28B SOT-23 of ha 741 ic MAR 737

    BFR92a MARKING P2

    Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
    Text: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23


    OCR Scan     		PDF BFR92A/BFR92AR BFR92A BFR92AR 26-Mar-97 BFR92a MARKING P2 MAR 641 TRANSISTOR sot-23 marking RIP ha 1452