TRANSISTOR M 839 Search Results

TRANSISTOR M 839 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR M 839 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PCF7952 Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191 Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.	Original	PDF	VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
PCF7931AS Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.	Original	PDF	87C528 X3A-KTY181/1 X3A-OH155 PCF7931AS PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	PDF	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
MPQ3762 Abstract: it 051 1N916 2N3762 tup pnp transistor Text: M P Q silicon 3 7 6 2 QUAD DUAL IN-LINE PNP SILICON ANNULAR MEMORY DRIVER TRANSISTOR QUAD DUAL-IN-LINE PNP SILICON MEMORY DRIVER TRANSISTOR . . . designed fo r high-current, high-speed switching. • Low Collector-E m itter Saturation Voltage — VC E (sat) s 0 .5 5 V d c (M ax) @ l c s 5 0 0 m Adc	OCR Scan	PDF	MPQ3762 120ns 2N3762 O-116 30Vdc 1N916 MPQ3762 it 051 1N916 2N3762 tup pnp transistor
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2SA939 Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik Text: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k	OCR Scan	PDF	2sa839 -150V 8SC1669 220AB 8-10A1A 2SA939 2SA839â 2SA839-Y 200X2mm 2SA939 B 2SA839 HI-FI AMP 2SA839-0 sfik
em 483 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT	OCR Scan	PDF	/IPA804T 2SC4571 2SC4571) uPA804T em 483
nec 2501 LD 932 Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1	OCR Scan	PDF	uPA804T 2SC4571 2SC4571) nec 2501 LD 932 nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
L46R Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l	OCR Scan	PDF	uPA607T PA606T l--62 B484S± L46R 96 mfu DIODE HR 8665 PA607T 4N51 5M1E 328l
STA405A Abstract: SMA6012 sma4031 STA451C STA438A STA455C STA439A sla6023 STA471A STA437A Text: 1 * * P M 1 SANKEN DISCRETE TRANSISTOR ARRAYS V ceo I c I cp hfE (A) min Type No. (V ) Equivalent Circuit Diagram Type No. V ceo IcOcp} hpE (V) (A) m in E quivalent Circuit D iagram STA301A 60±10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000	OCR Scan	PDF	STA301A STA302A STA303A STA304A STA305A STA308A STA311A STA312A STA321A STA322A STA405A SMA6012 sma4031 STA451C STA438A STA455C STA439A sla6023 STA471A STA437A
logos 4012B Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485 Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX	OCR Scan	PDF	TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

MGF4918D Abstract: MGF4914D mitsubishi mgf M5M27C102 MGF4910D MGF4316D MGF4916C mgf4916d A0523 MGF4917 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: mtlimeters (inches)	OCR Scan	PDF	MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: -to-id-25 MGF4918D MGF4914D mitsubishi mgf M5M27C102 MGF4316D MGF4916C mgf4916d A0523 MGF4917
transistor M 839 Abstract: TRANSISTOR S 838 MTJ10 transistor jt AC42C Text: t s 'jD y N P N E m m m ï y B h ^ y v x y SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O ^ 1" * * ¥ « [ * ] WÄffl ° TV H o r i z o n t a l • ÂÜWŒT-f • ^ -i •/ f- 'y O u tp u t A p p lic a tio n s : ¿'•^FlBîàJügW VCEX = 2 2 0 0 V '• t f	OCR Scan	PDF	2-21B1A AC42C AC42C 100mA 31stznm 2sc2124 transistor M 839 TRANSISTOR S 838 MTJ10 transistor jt
kd 506 transistor Abstract: transistor M 839 DU2880U Text: A tfN m an AMP com pany RF MOSFET Power Transistor, 80W, 28V 2 - 1 7 5 MHz DU2880U Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	PDF	DU2880U kd 506 transistor transistor M 839 DU2880U
NDB4060L Abstract: NDP4060L Text: & Na t i o n a I Semiconductor” A p ril 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode • 15A, 60V. RDS 0NI = O .m @ VGS = 5V power field effect transistors are produced using	OCR Scan	PDF	NDP4060L/ NDB4060L b5G1130 00MD2MM NDP4060L
te 2443 MOTOROLA transistor Abstract: 1S2210 MOSFET 830 63 ng MRF171 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range	OCR Scan	PDF	MRF171 MRF171 te 2443 MOTOROLA transistor 1S2210 MOSFET 830 63 ng
2SK2110 Abstract: No abstract text available Text: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o > £ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,	OCR Scan	PDF	2SK2110 2SK2110
NE32584C-T1 Abstract: nec 3435 transistor am 4428 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.	OCR Scan	PDF	NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428
BUX53 Abstract: transistor c 839 P6021 TRANSISTOR 841 Text: BUX 53 NPN S ILIC O N T R A N S I S T O R , T R I P L E D I F F U S E D M E S A T R A N S IS T O R N P N S IL IC I U M , M E S A T R I P L E D I F F U S E T E N TA T IV E D A TA N O T IC E P R O V IS O IR E Driver stage fo r high voltage power transistor Etage p ilo te p o u r tran sistor de puissance	OCR Scan	PDF	P6021 BUX53 transistor c 839 TRANSISTOR 841
Untitled Abstract: No abstract text available Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband	OCR Scan	PDF	BFG135 OT223
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

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TRANSISTOR M 839 Search Results

TRANSISTOR M 839 Result Highlights (5)

TRANSISTOR M 839 Datasheets Context Search

PCF7952

PCF7931AS

ph 4148 zener diode

MPQ3762

sx3704

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

2SA939

em 483

nec 2501 LD 932

L46R

STA405A

logos 4012B

MGF4918D

transistor M 839

kd 506 transistor

NDB4060L

te 2443 MOTOROLA transistor

2SK2110

NE32584C-T1

BUX53

Untitled

transistor f6 13003