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    TRANSISTOR ELECTRONIC BALLAST Search Results

    TRANSISTOR ELECTRONIC BALLAST Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ELECTRONIC BALLAST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 13003d

    Abstract: 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a
    Text: ELECTRONIC 13003 HIGH VOLTAGE POWER TRANSISTOR FEATURES: High Voltage Capability High Speed Switching Wide SOA APPLICATIONS: Flourscent Lamp Electronic Ballast Electronic Transformer LIMMITING VALUES Tj=25℃ Unless OtherWise Stated Parameter Symbol Value


    Original     		PDF Jul-09 13003F transistor 13003d 13003D 13003a 13003a TRANSISTOR 13003F 13003C transistor 13003F 13003c TRANSISTOR 13003E S W 13003a

    D4124PL

    Abstract: Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3DD4124PL 3dd4124 D412
    Text: Fast-Switching NPN Bipolar Transistor R D4124PL Characteristics ◆Middle Breakdown Voltage ◆High Current Capability ◆High Switching Speed ◆High Ruggedness Applications 110V AC ◆ Electronic Ballasts For Fluorescent Lighting ◆ Electronic Transformers


    Original     		PDF D4124PL 3DD4124PL 25TO-92 O-126) Tel864324678411 D4124PL Jilin Sino-Microelectronics 110V AC to 5V DC ic 3DD41 3dd4124 D412

    BUT211

    Abstract: BUT21
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.


    Original     		PDF BUT211 O220AB O220AB BUT211 BUT21

    BUT211

    Abstract: BUT21
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.


    Original     		PDF BUT211 O220AB O220AB BUT211 BUT21

    BU1706AX

    Abstract: BUT211X
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.


    Original     		PDF BUT211X OT186A BU1706AX BUT211X

    BDY90P

    Abstract: No abstract text available
    Text: BDY90P NPN SILICON POWER TRANSISTOR • ■ ■ NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS ■ GENERAL PURPOSE AMPLIFIERS ■ DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST


    Original     		PDF BDY90P BDY90P O-220 O-220

    BUT211X

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.


    Original     		PDF BUT211X OT186A BUT211X

    ELECTRONIC BALLAST 12v

    Abstract: FJP5304D TRANSISTOR hFE-100
    Text: FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application • • • • Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time


    Original     		PDF FJP5304D O-220 FJP5304D ELECTRONIC BALLAST 12v TRANSISTOR hFE-100

    BU1706A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.


    Original     		PDF BU1706A BU1706A

    BDY90P

    Abstract: No abstract text available
    Text: BDY90P NPN SILICON POWER TRANSISTOR • ■ ■ NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION ■ GENERAL PURPOSE SWITCHING APPLICATIONS ■ GENERAL PURPOSE AMPLIFIERS ■ DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLAST


    Original     		PDF BDY90P BDY90P O-220 O-220

    BUL128D

    Abstract: 700 v power transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors BUL128D TRANSISTOR NPN TO-220 FEATURES z ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING z FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR


    Original     		PDF O-220 BUL128D O-220 BUL128D 700 v power transistor

    BU1706A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.


    Original     		PDF BU1706A BU1706A

    BU1706AB

    Abstract: BU1706A
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.


    Original     		PDF BU1706AB BU1706AB BU1706A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors BUL128D TRANSISTOR NPN TO-220 FEATURES z ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING z FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR


    Original     		PDF O-220 BUL128D O-220

    wk 2 e transistor

    Abstract: transistor BU 705 BUT21
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUT211 T0220AB T0220AB1 wk 2 e transistor transistor BU 705 BUT21

    BUT21

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUT211 T0220AB BUT21

    ST25C

    Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF 00DRS51 flBES100 VB-12SV ST25C st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI

    BUX100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUX100 711Dfi 711005b BUX100

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUX100

    BUX100

    Abstract: transistor ""
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUX100 100mA 7110flBb DD77647 DD776M6 BUX100 transistor ""

    transistor BC 245

    Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time


    OCR Scan     		PDF 00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706A

    LB 124 transistor

    Abstract: LB 122 transistor
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1706AB LB 124 transistor LB 122 transistor