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    TRANSISTOR DICE Search Results

    TRANSISTOR DICE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR DICE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mil 43

    Abstract: process 65 die process information process 88
    Text: Section 6 Bipolar Transistor Dice Process 03 . 6-4 Process 05 . 6-4


    Original     		PDF

    TRANSISTOR zo 109 ma

    Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
    Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		PDF B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor

    1.27 GHz transistor

    Abstract: transistor j 127 B15V180
    Text: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C


    Original     		PDF B15V180 B15V180 1.27 GHz transistor transistor j 127

    PHOTO TRANSISTOR 940nm

    Abstract: PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor
    Text: PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters inches ; 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS


    Original     		PDF TN2469TK 008inch) 260for 940nm PHOTO TRANSISTOR 940nm PHOTO TRANSISTOR "photo transistor" TN2469TK electrooptical transistor

    OST-9N15

    Abstract: color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303
    Text: OST-9N15 PHOTO TRANSISTOR • General Description The OST-9N15 is high sensitivity NPN silicon photo-transistor mounted in a SMD plastic package. ■ Features ˙Compact ˙Wide angular response ˙Low cost ˙Meet RoHS ■ Applications ˙Optical counters ˙Optical detectors


    Original     		PDF OST-9N15 OST-9N15 100uA 72hrs. 24hrs) 45min 30min) color sensitive PHOTO TRANSISTOR OST9N15 transistor d 1303

    C 3311 transistor

    Abstract: BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF480 BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023
    Text: BIPOLARICS, INC. Part Number BRF480 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' BRF480 is a high performance silicon bipolar transistor intended for medium power linear and Class C applications at VHF, UHF and microwave frequencies in 7.2


    Original     		PDF BRF480 BRF480 OT-223 OT-103 BRF48086 BRF48084 BRF48085 BRF48004 C 3311 transistor BRF4801 c 3198 transistor 136.21 IC 7585 midium power uhf transistor BRF4801J Silicon Bipolar Transistor 35 MICRO-X BRF48023

    2N2060M

    Abstract: No abstract text available
    Text: 2N2060M w w w. c e n t r a l s e m i . c o m SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.


    Original     		PDF 2N2060M 2N2060M 20MHz 200Hz

    2N2918

    Abstract: No abstract text available
    Text: 2N2918 DUAL SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2918 is a Dual Silicon NPN Transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications.


    Original     		PDF 2N2918 20MHz 140kHz 200Hz

    TPV597

    Abstract: No abstract text available
    Text: , Dnc. ^s.mi- lonciuct oi The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.


    Original     		PDF TPV597 -58dBIMD TV05001 TPV597

    MAT01AH

    Abstract: No abstract text available
    Text: Matched Monolithic Dual Transistor MAT-01 ANALOG DEVICES □ 1.0 SCOPE This specification covers the detail requirements for a dual matched transistor. It is highly recommended that this data sheet be used as a baseline for new military or aerospace spec control drawings.


    OCR Scan     		PDF MAT-01 MIL-M-38510) MAT-01 AH/883 GH/883 100Hz 1000Hz MAT01AH

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    Untitled

    Abstract: No abstract text available
    Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .


    OCR Scan     		PDF MAT-03 DAC-08, 992mA 992rnA, 008mA

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ


    OCR Scan     		PDF MAT03

    BC307A

    Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
    Text: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C


    OCR Scan     		PDF BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC558B BC308B BC557A

    diode LT 1n4007

    Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­


    OCR Scan     		PDF 5055B BC337 BD135 1N4007 100A101JP50 diode LT 1n4007 transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 3 pin TRIMMER capacitor 1n4007 mttf

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class


    OCR Scan     		PDF TPV5051 BD135

    MAT03

    Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
    Text: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max


    OCR Scan     		PDF MAT03 MAT03 MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH

    TPV8100B

    Abstract: No abstract text available
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TPV8100B Advance Information The RF Line UHF Linear Power Transistor 100W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . d e sign e d for output sta ge s in Band IV & V T V transmitter am plifiers. Internal m atch­


    OCR Scan     		PDF TPV8100B TPV8100B

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION All information in this data sheet is preliminary J ¥ U iy L \J V i and subject to change. 11/96 3V, 1W RF Power Transistors for 900MHz Applications The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a bias­


    OCR Scan     		PDF 900MHz 900MHz MAX2602) MAX2601/MAX2602 MAX2602 MAX2601/MAX2602 MAX2601ESA MAX2602ESA MAX2602E/D 915MHz

    transistor B 1184

    Abstract: No abstract text available
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L


    OCR Scan     		PDF SIPC08P20 SIPC08P10 SIPC20AN05 SIPC20AN05L SIPC14AN05 SIPC14AN05L SIPC08AN05 SIPC08AN05L SIPC06AN05 SIPC06AN05L transistor B 1184

    airtronic capacitor

    Abstract: airtronic air-tronic 470-860 mhz Power amplifier w xg transistor 470-860 mhz Power amplifier 5 w linear amplifier 470-860
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Pow er Transistor Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.


    OCR Scan     		PDF TPVS98 airtronic capacitor airtronic air-tronic 470-860 mhz Power amplifier w xg transistor 470-860 mhz Power amplifier 5 w linear amplifier 470-860

    Untitled

    Abstract: No abstract text available
    Text: fc>5E D □aitano o o m s s t OSS Matched Monolithic Dual Transistor MAT-01 A N A LO G D E V IC E S ANALOG DEVICES INC 1.0 ANA SCO PE This specification covers the detail requirements for a dual matched transistor. It is highly recommended that this data sheet be used as a baseline for new military or


    OCR Scan     		PDF MAT-01 MAT-01 AH/883 GH/883 MIL-M-38510) 100Hz 1000Hz 10/iA.

    2N2060M

    Abstract: No abstract text available
    Text: Datasheet 2N2060M w g h C h C i i Semiconductor Corp. NPN SILICON DUAL TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED EC TO-78 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2060M is a silicon NPN dual transistor utilizing two individual chips mounted


    OCR Scan     		PDF 2N2060M 2N2060M 20MHz 300hA, 510i2, 200Hz 100HA 100HA

    470-860 mhz Power amplifier w

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor TPV597 . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity.


    OCR Scan     		PDF TPV597 TPV597 470-860 mhz Power amplifier w