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    TRANSISTOR D2131 Search Results

    TRANSISTOR D2131 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR D2131 Datasheets Context Search

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    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD2131 D2131 transistor d2131 2SD2131

    D2131

    Abstract: transistor d2131 2SD2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original
    PDF 2SD2131 D2131 transistor d2131 2SD2131

    Untitled

    Abstract: No abstract text available
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original
    PDF 2SD2131

    D2131

    Abstract: transistor d2131
    Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


    Original
    PDF 2SD2131 D2131 transistor d2131

    d1711

    Abstract: TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711
    Text: D-1000 SERIES D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible & Programmable Signal Conditioning Modules Introduction The D-1000 Series family of signal conditioning modules consists of the D-1000/2000 input modules and the D-3000/4000 output modules.


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    PDF D-1000 D-1000/D-2000/D-3000/D-4000 RS-232/RS-485-Compatible D-1000/2000 D-3000/4000 RS-232 RS-485 Output/RS-232C d1711 TRANSISTOR d3000 D2000 transistor d1541 transistor D2222 transistor D1411 D1541 transistor D1521 transistor D1521 transistor d1711