Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
|
Original
|
PDF
|
IB1011M70
IB1011M70
IB1011M70-REV-PR1-DS-REV-NC
|
D1790
Abstract: No abstract text available
Text: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating
|
Original
|
PDF
|
IB1011S70
IB1011S70
1090MHz.
IB1011S70-
D1790
|
2SD1614
Abstract: NEC silicon epitaxial power transistor NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SD1614
D17973EJ3V0DS00
TC-1649A)
D17973EJ3V0DS
2SD1614
NEC silicon epitaxial power transistor
NEC Systems
|
1115a
Abstract: D1794 2SB1115 1115A ics NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SB1115, 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SB1115,
D17940EJ3V0DS00
TC-1624A)
2SB1115
D17940EJ3V0DS
1115a
D1794
1115A ics
NEC Systems
|
2sc3618 application
Abstract: NEC diode nec transistor 2SC3618
Text: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SC3618
D17971EJ3V0DS00
TC-1641A)
D17971EJ3V0DS
2sc3618 application
NEC diode
nec transistor
2SC3618
|
TC1628
Abstract: D1793 2SB1114 NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SB1114
D17936EJ3V0DS00
TC-1628A)
D17936EJ3V0DS
TC1628
D1793
2SB1114
NEC Systems
|
2SC3554
Abstract: data transistor nec
Text: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SC3554
D17970EJ3V0DS00
TC-1644A)
D17970EJ3V0DS
2SC3554
data transistor nec
|
2SD1950
Abstract: C1987 NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SD1950
D17976EJ3V0DS00
TC-1894A)
D17976EJ3V0DS
2SD1950
C1987
NEC Systems
|
2SD1006
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SD1006,
D17972EJ4V0DS00
TC-1369B)
D17972EJ4V0DS
2SD1006
|
nec speed grade
Abstract: nec transistor 2SA1463
Text: DATA SHEET SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SA1463
D17935EJ3V0DS00
TC-1889A)
D17935EJ3V0DS
nec speed grade
nec transistor
2SA1463
|
2SC3617
Abstract: TC1640 NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD <R> <R> <R> <R> <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
|
Original
|
PDF
|
2SC3617
D17913EJ3V0DS00
TC-1640A)
2SC3617
TC1640
NEC Systems
|
d2493
Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
|
Original
|
PDF
|
A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
d2493
c4468
transistor D2562 B1649
c4467
c4381
c4131
transistor A1492
a1695 power transistor
c4153
c3852
|
c4381
Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Text: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
|
Original
|
PDF
|
A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
c4381
D2493
c4467
c4468
C4131
c4467 a1694
C3519
c3852
C3834
d2494
|
D2641
Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Text: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
|
Original
|
PDF
|
A1186.
A1215.
A1216.
A1262.
A1294.
A1295.
A1303.
A1386/A
A1488/A
A1492.
D2641
c4381
transistor A114
C5239
b1686
c4517
C4131
C3284
c4467
C4300
|
|
|
diode MARKING M16
Abstract: D1790 TC-2331 2SJ209 marking H17 TC233 nec mosfet
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ209, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
|
Original
|
PDF
|
2SJ209
2SJ209,
diode MARKING M16
D1790
TC-2331
2SJ209
marking H17
TC233
nec mosfet
|
2SJ211
Abstract: 2332a m400 equivalent
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
|
Original
|
PDF
|
2SJ211
2SJ211,
2SJ211
2332a
m400 equivalent
|
2SJ204
Abstract: 2SK1582 marking h15
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
|
Original
|
PDF
|
2SJ204
2SJ204,
2SK1582
2SJ204
2SK1582
marking h15
|
m02 marking transistor
Abstract: 2SJ461A h19 mosfet Diode marking m7 DC M7 DIODE D1790
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in
|
Original
|
PDF
|
2SJ461A
2SJ461A
2SJ461A-T1B-AT
2SJ461A-T2B-AT
SC-59
m02 marking transistor
h19 mosfet
Diode marking m7
DC M7 DIODE
D1790
|
D1790
Abstract: marking H12 Diode marking m7 2SJ185 2SK1399 NEC PART NUMBER MARKING
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. 2.8 ±0.2 2.9 ±0.2 power saving. FEATURES • Directly driven by ICs having a 3 V power supply.
|
Original
|
PDF
|
2SJ185
2SJ185
2SK1399
D1790
marking H12
Diode marking m7
2SK1399
NEC PART NUMBER MARKING
|
2SJ210
Abstract: NEC PART NUMBER MARKING D1790
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 FEATURES • Directly driven by the output of ICs having a 5 V power source.
|
Original
|
PDF
|
2SJ210
2SJ210,
2SJ210
NEC PART NUMBER MARKING
D1790
|
2SJ204
Abstract: 2SK1582 20067 VICP
Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ204 Pチャネル MOS FET スイッチング用 2SJ204は，5 V電源系ICによりドライブ可能なPチャネル小信号 外形図（単位：mm） MOS FETです。
|
Original
|
PDF
|
2SJ204
2SJ2045
2SK1582
Cycle50
D17904JJ3V0DS003
TC-7967A
D17904JJ3V0DS
2SJ204
2SK1582
20067
VICP
|
K1981
Abstract: 2SD100 2SD1006 1007
Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1006, 1007 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。
|
Original
|
PDF
|
2SD1006,
D17972JJ4V0DS00
TC-5477A
D17972JJ4V0DS
M8E02
K1981
2SD100
2SD1006
1007
|
1115A
Abstract: D1794 2SB1115 k1985
Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SB1115, 1115A PNP エピタキシアル形シリコントランジスタ 低周波電力増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。
|
Original
|
PDF
|
2SB1115,
D17940JJ3V0DS00
TC-5825A
2SB1115
D17940JJ3V0DS
M8E02
1115A
D1794
k1985
|
BD179
Abstract: transistor d179 TRANSISTOR motorola 416 IC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use ¡n 5.0 to 10 Watt audio am plifiers and drivers utilizing complementary or quasi complementary circuits.
|
OCR Scan
|
PDF
|
BD179
BD180
BD179-10
transistor d179
TRANSISTOR motorola 416 IC
|
