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    TRANSISTOR BO 47 Search Results

    TRANSISTOR BO 47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BO 47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm *1 *2 1.0–0.2 0.5±0.08 1.5±0.1 Ta=25˚C 0.4±0.04 3.0±0.15 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for


    Original     		PDF 2SC4543

    BF398

    Abstract: No abstract text available
    Text: BF398 PNP SILICON TRANSISTOR TO-92F 3F398 is PNP silicon transistor designed for high voltage applications. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VC BO 150V Collector-Emitter Voltage VCEO 150V Emitter-Base Voltage VE 80 6V Total Power Dissipation


    OCR Scan     		PDF BF398 O-92F 3F398 625mW 100mA BF398

    Untitled

    Abstract: No abstract text available
    Text: KSD5078 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode TO -3P F • High C ollector-Base Voltage (VC Bo=1500V) • High Speed Sw itching (tF=0.1jis) ABSOLUTE MIXIMUM RATING Rating Unit C ollector Base Voltage


    OCR Scan     		PDF KSD5078

    IRGPC46

    Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
    Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF O-247AC IRGPC46 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó


    OCR Scan     		PDF QM200HC-M VCO200V

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF 23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070

    300V transistor npn 2a

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fa st sw itc h in g * G uaranteed h FE specified up to 2 A m p s * L o w collector-em itter saturation v o lta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L


    OCR Scan     		PDF T0126 300ns. 300V transistor npn 2a

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    transistor npn d 2058

    Abstract: 2PD601A
    Text: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION


    OCR Scan     		PDF bb53T31 002b055 2PD601; 2PD601A 2PB709 2PB709A 2PD601Q: 2PD601R: 2PD601S: 2PD601AQ: transistor npn d 2058 2PD601A

    bc337 transistor

    Abstract: transistor bc337 ATC100A2R2 ATC100a101
    Text: MOTOROLA SC XSTRS/R F 1Z E D | ¿,31,725*4 Q0âfl3tfe, S | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV6080B The RF Line UHF Linear Pow er Transistor 80 W — 470 to 860 M H z UHF LIN E A R PO W ER T R A N SIS T O R . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal match­


    OCR Scan     		PDF TPV6080B BC337 1N4007 apacitor22 ATC100A101JP50 bc337 transistor transistor bc337 ATC100A2R2 ATC100a101

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TD62M4700F TO SHIBA BIPOLAR D IGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M470QF EXCELLENT LOW SATURATION H-BRIDGE DRIVER TD62M 4700F is low voltage use Multi Chip H-Bridge Driver 1C incorporates 4 low saturation discrete Transistors which equipped bias resistor and diode. This 1C is


    OCR Scan     		PDF TD62M4700F TD62M470QF TD62M 4700F MFP-16 SSOP16-P-225-1

    A020

    Abstract: 3007A-DIP18 DIP18 LA2230 LC7074 LC7074M transistor Comparison Tables MFP10 LA2231
    Text: Ordering num ber : EN4789 CMOS LSI LC7074, 7074M N o .4789 SANYO Synchronous Error Correction LSI for RDS Applications Overview Package Dimensions The LC7074 and the LC7074M are ICs for the RDS radio d a ta sy ste m im p le m e n te d by th e E B U (E u ro p e a n


    OCR Scan     		PDF EN4789 LC7074, 7074M LC7074 LC7074M LA2230 LC7074/M A020 3007A-DIP18 DIP18 transistor Comparison Tables MFP10 LA2231

    MARKING CODE Zi sot363

    Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS

    108w

    Abstract: Q62702-C2275
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R1=2.2kiî, R2=47ki2 Type Marking Ordering Code Pin Configuration BCR 108W WHs 1= B Q62702-C2275 Package 2=E 3=C


    OCR Scan     		PDF 47ki2) Q62702-C2275 OT-323 300ns; 108w Q62702-C2275

    transistor 7g

    Abstract: Q62702-C2263
    Text: SIEMENS BCR 185 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor Ri=10k£î, R2=47kiî Type Marking Ordering Code BCR 185 WNs Pin Configuration Q62702-C2263 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2263 OT-23 300ns; transistor 7g Q62702-C2263

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W


    OCR Scan     		PDF 10kii, 47kii) Q62702-C2280 OT-323 300ns;

    BCR198

    Abstract: KTY 120
    Text: SIEMENS BCR 198 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£2, R2=47kil Type Marking Ordering Code Pin Configuration B C R 198 W Rs 1=B Q62702-C2266 Package 2=E 3=C


    OCR Scan     		PDF 47kil) Q62702-C2266 OT-23 BCR198 KTY 120

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package • Built in bias resistor (R i=4 7kiî, R2=47ki!) WRs Q62702-C2419 O ro 1=E1 2=B1


    OCR Scan     		PDF Q62702-C2419 OT-363 0235bD5 0120fl4b

    BCR 150 V- 12

    Abstract: No abstract text available
    Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface Circuit, driver circuit • Built in bias resistor R1=47kS2, R2=22kiì Ordering Code BCR 146W UPON INQUIRY Pin Configuration Package ro u m Marking WLs CÛ II Type


    OCR Scan     		PDF 47kS2, OT-323 BCR 150 V- 12

    Untitled

    Abstract: No abstract text available
    Text: KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Orivdr circuit • Built in bias Resistor (R,=47KQ, R;=22KO) • Complement to KSR2108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR1108 KSR2108 10OjiA

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type


    OCR Scan     		PDF Q62702-C2337 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2SC4713K/2SC4774 £ /Transistors 2SC 4713K 2SC 4774 y 'J -1 > h Epitaxial Planar NPN Silicon Transistor lhJi J&*§,iiffl/R F Amplifier • W f ^ j il l / D i m e n s i o n s Unit : mm) Ron As' 4 $ » T ' . h £ i ' o 2) • Features 1) Very low output on-state


    OCR Scan     		PDF 2SC4713K/2SC4774 2SC4713K 2SC4774 2SC4774 2SC4713K/ 100mVrms