TRANSISTOR BL 100 Search Results

TRANSISTOR BL 100 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BL 100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NPN Bipolar Transistor Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package	Original	PDF	KTC3198-O/Y/GR/BL C/10s 195mg S1405004 NPN Bipolar Transistor KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
transistor DV3 Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.	Original	PDF	2SD596 2SB624 200TYP. 100mA) OT-23 BL/SSSTC024 transistor DV3 transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 transistor DV1
sot323 transistor marking Abstract: transistor marking PB 2SC4102W TRANSISTOR BL 560 marking G SOT323 Transistor F 323 BR transistor cr marking pb 05 transistor sot323 marking K Transistor marking S Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4102W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.	Original	PDF	2SC4102W 200mW OT-323 BL/SSSTF037 sot323 transistor marking transistor marking PB 2SC4102W TRANSISTOR BL 560 marking G SOT323 Transistor F 323 BR transistor cr marking pb 05 transistor sot323 marking K Transistor marking S
transistor marking PB Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4097W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.	Original	PDF	2SC4097W 200mW OT-323 BL/SSSTF003 transistor marking PB transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor
MMST2222A Abstract: MMST2907A Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMST2222A FEATURES z Epitaxial planar die construction. Pb z Complements the MMST2907A. Lead-free z Ultra-small surface mount package. APPLICATIONS z NPN Silicon Epitaxial Planar Transistor.	Original	PDF	MMST2222A MMST2907A. OT-323 BL/SSSTF006 MMST2222A MMST2907A
transistor SOT23 J8 Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23	Original	PDF	S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
S9018W Abstract: s9018 transistor S9018 transistor SOT J8 S9018 transistor Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323	Original	PDF	S9018W 200mW) OT-323 S9018 BL/SSSTF060 S9018W s9018 transistor S9018 transistor SOT J8 S9018 transistor
SOT-23 MARKING 20A Abstract: TRANSISTOR BL 100 BL 05A SOT-23 marking code 20A MMBT589 20A SOT-23 footprint transistor sot marking code 2V "General Purpose Transistor" 01A SOT23 Text: BL Galaxy Electrical Production specification PNP General Purpose Transistor FEATURES z Epitaxial planar die construction. z Also available in lead free version. MMBT589 Pb Lead-free APPLICATIONS z High current surface mount PNP silicon switching transistor	Original	PDF	MMBT589 OT-23 BL/SSSTC118 SOT-23 MARKING 20A TRANSISTOR BL 100 BL 05A SOT-23 marking code 20A MMBT589 20A SOT-23 footprint transistor sot marking code 2V "General Purpose Transistor" 01A SOT23
K2X sot-23 Abstract: k2x transistor surface mount MMDT4401 dual npn 500ma k2x transistor Text: BL Galaxy Electrical Production specification Dual NPN Small Signal Surface Mount Transistor MMDT4401 FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free APPLICATIONS z Dual NPN small signal surface mount transistor	Original	PDF	MMDT4401 OT-363 OT-23 BL/SSSTE005 150mA 65Typical K2X sot-23 k2x transistor surface mount MMDT4401 dual npn 500ma k2x transistor
marking BQ sot-23 Abstract: marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0Pf z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412	Original	PDF	2SC2412 2SA1037 OT-23 BL/SSSTC020 marking BQ sot-23 marking Bq sot23 2SC2412 bq transistor sot23 sot-23 CODE BS Transistor marking BQ 12V marking code sot 23 marking BS SOT23 sot-23 MARKING CODE BS transistor 12v 1A NPN
transistor marking 3em Abstract: transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation. PC=350mW MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code	Original	PDF	MMBTH10 350mW) OT-23 BL/SSSTC125 transistor marking 3em transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23
transistor bq Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Pb Low Cob,Cob=2.0pF. z z Lead-free Complementary to 2SA1037 APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2412	Original	PDF	2SC2412 2SA1037 OT-23 BL/SSSTC020 transistor bq
sot-23 npn marking code cr Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code	Original	PDF	2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
transistor marking 2A H Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100 Text: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.	Original	PDF	FMMT449 FMMT549. OT-23 BL/SSSTC051 transistor marking 2A H npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100

TRANSISTOR BL 100 Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.	Original	PDF	2SC4116W 2SA1586. OT-323 BL/SSSTF038 TRANSISTOR BL 100 transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
L6 TRANSISTOR Abstract: No abstract text available Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.	Original	PDF	2SC1623 200TYP OT-23 BL/SSSTC0018 L6 TRANSISTOR
WY transistor Abstract: transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation. PC=100mW KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application.	Original	PDF	KTC4076W KTA2015 100mW) OT-323 BL/SSSTF049 WY transistor transistor marking WY KTA2015 KTC4076W Y MARKING NPN Silicon Epitaxial Planar Transistor .wy transistor
2SC1623 Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.	Original	PDF	2SC1623 200TYP OT-23 BL/SSSTC0018 2SC1623 L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
BUK552 Abstract: BUK552-60A BUK552-60B T0220AB D0307 Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^Bl DD3D7fiD 45*} ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	PDF	D0307BO BUK552-60A T0220AB BUK552 ID/100 BUK552-60B D0307
buk456 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bRE ] • bbSa^Bl DDBQbBQ 5?B * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	O220AB BUK456-100A/B BUK456 -100A -100B 0Q30b63 buk456
M33 thermal Abstract: BUK545 BUK545-60A BUK545-60B Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl QD307b0 bt.D « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	PDF	QD307b0 BUK545-60A/B BUK545 M33 thermal BUK545-60A BUK545-60B
BUK854-500IS Abstract: T0220AB igbt buk854 Text: N AMER PHILIPS/DISCRETE t.'iE T> • bbS3^Bl ODBOa^S flbD « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel insulated gate bipolar power transistor in a plastic	OCR Scan	PDF	BUK854-500IS T0220AB BUK854-500IS igbt buk854
transistor 6bt Abstract: DC/transistor 6bt Text: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack	OCR Scan	PDF	BU2508AF 00583SD OT199; transistor 6bt DC/transistor 6bt
BUK457-400B Abstract: T0220AB Text: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	711052b BUK457-400B T0220AB BUK457-400B T0220AB

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TRANSISTOR BL 100 Search Results

TRANSISTOR BL 100 Result Highlights (5)

TRANSISTOR BL 100 Datasheets Context Search

NPN Bipolar Transistor

transistor DV3

sot323 transistor marking

transistor marking PB

MMST2222A

transistor SOT23 J8

S9018W

SOT-23 MARKING 20A

K2X sot-23

marking BQ sot-23

transistor marking 3em

transistor bq

sot-23 npn marking code cr

transistor marking 2A H

TRANSISTOR BL 100

L6 TRANSISTOR

WY transistor

2SC1623

BUK552

buk456

M33 thermal

BUK854-500IS

transistor 6bt

BUK457-400B