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    TRANSISTOR A31 Search Results

    TRANSISTOR A31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


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    BUZ310

    Abstract: C67078-A3101-A2
    Text: BUZ 310 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage


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    PDF O-218 C67078-A3101-A2 BUZ310 C67078-A3101-A2

    transistor buz 311

    Abstract: BUZ 311 C67078-A3102-A2
    Text: BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 311 1000 V 2.5 A 5Ω TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage


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    PDF O-218 C67078-A3102-A2 transistor buz 311 BUZ 311 C67078-A3102-A2

    CA3127

    Abstract: CA3227 CA3227M CA3227M96 TB379 610E 800E
    Text: CA3227 IGNS W DES E N R O DED F E PRODUCT MMEN UT O C IT E T Data Sheet U BS S NOT R E L B A3127 POSSI CA3127, HF High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


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    PDF CA3227 A3127 CA3127, CA3227 FN1345 CA3127 CA3227M CA3227M96 TB379 610E 800E

    chip die npn transistor

    Abstract: quad hf npn transistors
    Text: IGN W D ES E N R T FO ODUC NDED T E PR O MME U C IT E T R BS Data Sheet NOT LE S U A3127 POSSIB CA3127, HF April 2002 High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz The CA3227 consists of five general purpose silicon NPN


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    PDF A3127 CA3127, CA3227 FN1345 CA3227 PUB95 MO-220 chip die npn transistor quad hf npn transistors

    A3102

    Abstract: HFA3102 Dual Long-Tailed Pair Transistor Array M14.15 Package
    Text: HF A3102 Semiconductor A u g u s t 19 96 D a ta S h e e t Dual Long-Tailed Pair Transistor Array The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Harris bonded wafer UHF-1 SOI process, this array achieves


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    PDF A3102 HFA3102 10GHz) 10GHz UPA102G HFA3102 1-800-4-HARRIS A3102 Dual Long-Tailed Pair Transistor Array M14.15 Package

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    CA3148

    Abstract: CA31B ICAN-5296 CA3TB A3148 ca3083 CA3183
    Text: ¥ j H a r r i CA3146, CA3146A CA3183, CA3183A s High-Voltage Transistor Arrays A u g u s t 1991 Features Description • Matched General-Purpose Transistors The CA3146A, CA3146, CA3183A, and CA3183* are general-purpose high-voltage silicon n -p -n transistor


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    PDF CA3146, CA3146A CA3183, CA3183A CA3146A, CA3183A, CA3183* CA3146 CA3148 CA31B ICAN-5296 CA3TB A3148 ca3083 CA3183

    2SA1964

    Abstract: 2SC5248 catalogue de transistor data book transistors 2SA SPEC-A315 VCEO160V
    Text: 2SA1964 2SC5248 Transistors High-voltage Switching Audio output am plifier transistor, Stabilized power supply transistor 2SA1964 # F e a tu re s 1 ) Flal DC current gain characteristics. 2 ) High breakdown voltage. ( B V ceo = — 1 6 0 V ) 3 ) High fr. (Typ.150M H z)


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    PDF 2SA1964 2SC5248 2SA1964 150MHz) 2SC5248. O-220FP 2SC5248 catalogue de transistor data book transistors 2SA SPEC-A315 VCEO160V

    CA3103E

    Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
    Text: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays


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    PDF CA3146, CA3183 CA3146A, CA31B3A, CA3183* CA3146A CA3146 CA3103E ca3103 LVB 1.32 TA6103 CA3146E ca3183

    IC CA3138

    Abstract: RCA-CA3138 relay driver ckt CA3138 CA3138A transistor 9014 transistor LC 77
    Text: 3875081 G E SOLID Arrays STATE 01E 14648 _ _ _ _ _ \ ì e* ' - c/ - 3 _ j _ CA3138, C A3138 A High-Current, High-Beta N-P-N Transistor Arrays For Industrial, Com m ercial, and M ilitary Applications


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    PDF CA3138, CA3138A RCA-CA3138 andCA3138A CA3138A f----9014 92CS-26926RI IC CA3138 relay driver ckt CA3138 transistor 9014 transistor LC 77

    a2724

    Abstract: Transistor A23 CFB0230A 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder
    Text: CFB0230A CFB0230A CFB023ÛA 32-bit Carry Select Adder description: CFB0230A uses a fast carry-select algorithm to perforin an addition of two 32-bit numbers. LOGIC SYMBOL : CI A31 :0 B31:0 CFB0230A CO + I S31:0 TïflE-f32 INPUTS LOADING IN TRANSISTOR PAIRS) :


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    PDF CFB0230A CFB023 32-bit CFB0230A flE-f32) a2724 Transistor A23 2S302 A23 transistor TRANSISTOR a31 32 bit carry select adder

    alu 74181

    Abstract: 25B22 f422 S2 f19
    Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),


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    PDF CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19

    transistor buz 311

    Abstract: No abstract text available
    Text: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 311 Vds 1000 V b 2.5 A ^DS on 5 ÌÌ Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage Wds Drain-gate voltage '/DGR 1000


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    PDF O-218AA C67078-A3102-A2 transistor buz 311

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    PDF O-218AA C67078-A3102-A2 fl23Sb05 E3Sb05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 310 SIPMOS Power Transistor • N channel * Enhancement mode V3l05'55 3 Pin 1 Pin 2 Pin 3 D G S Type Vds b ffDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5 Í2 TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage


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    PDF O-218 C67078-A3101-A2 235bGS bridJJ40 fl235bG5

    CA3183

    Abstract: AN5296 application note ca3146 AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183
    Text: îSî h a r r i s ou semiconductor CA3146, CA3146A, CA3183, CA3183A High-Voltage Transistor Arrays August 1996 Features Description • Matched General Purpose Transistors - V b e M a tc h .±5m V Max


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    PDF CA3146, CA3146A, CA3183, CA3183A CA3183A, CA3183 CA3146A CA3146 AN5296 application note AN5296 Application of the CA3018 Integrated 3146A A3146 CA3146AM96 I1021 A3183

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE SFC2741 MC1305P
    Text: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.


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    PDF ULS-2045H ULN-2046A ULN-2047A ULN-2054A ULN-2081A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M TRANSISTOR REPLACEMENT GUIDE ULN2083 array MC1310P sfc*2741 TBA221 741TC uln2046a All in one TRANSISTOR REPLACEMENT GUIDE MC1305P

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SFC2741

    Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
    Text: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­


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    PDF ULN-2054A ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    Untitled

    Abstract: No abstract text available
    Text: mi SEME 2N3019CSM LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES Q -SU Q .1Q », (0.02 ± 0.004) ! •ra7r ~^/1aoi2i 0.31 • SILICON PLANAR EPITAXIAL NPN


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    PDF 2N3019CSM 20MHz 100nA

    transistor B324

    Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
    Text: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools


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    PDF 1DI200ZN-120 E82988 l95t/R89 Shl50 transistor B324 B324 transistor b324 B-324 diode ZENER EJJ M115