PSMN102-200Y
Abstract: No abstract text available
Text: PSMN102-200Y N-channel TrenchMOS standard level FET Rev. 01 — 29 April 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PSMN102-200Y
mbb076
PSMN102-200Y
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PSMN102-200Y
Abstract: No abstract text available
Text: PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 20 December 2010 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN102-200Y
PSMN102-200Y
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PSMN102-200Y
Abstract: No abstract text available
Text: LF PA K PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Rev. 03 — 16 March 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PSMN102-200Y
PSMN102-200Y
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AADS
Abstract: MAX634 MAX6342 MAX6343 MAX6344 MAX6345 AADU AADT AACR
Text: 19-1568; Rev 0; 10/99 6-Pin µP Reset Circuit with Power-Fail Comparator Features ♦ Small 6-Pin SOT23 Package ♦ Precision Factory-Set VCC Reset Thresholds Between 2.33V and 4.63V ♦ Guaranteed RESET Valid to VCC = +1V ♦ 100ms min Reset Pulse Width ♦ Debounced CMOS-Compatible Manual-Reset
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100ms
MAX6342
OT23-6
MAX6343
MAX6344
MAX6345
AADS
MAX634
AADU
AADT
AACR
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AADS
Abstract: MAX6343LUT-T MAX634 MAX6342 MAX6343 MAX6344 MAX6345 AADT
Text: 19-1568; Rev 1; 3/00 6-Pin µP Reset Circuit with Power-Fail Comparator Features ♦ Small 6-Pin SOT23 Package ♦ Precision Factory-Set VCC Reset Thresholds Between 2.33V and 4.63V ♦ Guaranteed RESET Valid to VCC = +1V ♦ 100ms min Reset Pulse Width ♦ Debounced CMOS-Compatible Manual-Reset
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100ms
MAX6342
OT23-6
MAX6343
MAX6344
MAX6345
AADS
MAX6343LUT-T
MAX634
AADT
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AADU
Abstract: AADT voltage regulator sot23-6 MAX634 MAX6342 MAX6343 MAX6344 MAX6345 aadz aadr
Text: 19-1568; Rev 2; 12/05 6-Pin µP Reset Circuit with Power-Fail Comparator Features The MAX6342–MAX6345 family of microprocessor µP supervisory circuits monitors power supplies in digital systems. These devices significantly improve system reliability and accuracy compared to separate ICs or discrete
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MAX6342
MAX6345
MAX6343
MAX6344
MAX6345
AADU
AADT
voltage regulator sot23-6
MAX634
MAX6344
aadz
aadr
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MAX634
Abstract: MAX6342 MAX6343 MAX6344 MAX6345
Text: 19-1568; Rev 1; 3/00 6-Pin µP Reset Circuit with Power-Fail Comparator Features ♦ Small 6-Pin SOT23 Package ♦ Precision Factory-Set VCC Reset Thresholds Between 2.33V and 4.63V ♦ Guaranteed RESET Valid to VCC = +1V ♦ 100ms min Reset Pulse Width ♦ Debounced CMOS-Compatible Manual-Reset
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100ms
MAX6342
OT23-6
MAX6343
MAX6344
MAX6345
MAX634
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PCF7931AS
Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Text: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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87C528
X3A-KTY181/1
X3A-OH155
PCF7931AS
PCF7935AS
PCF79730S-3851
PCF7931
PCF7935
PCF7931XP/C
PCF79730S
pcf79735S
PHILIPS PCF7935AS
TDA4859ps
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1-450-358-11
Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.
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TA-VE150
RM-U150)
1-450-358-11
SI-18752
si18752
schematic diagram surround sony
ry901
t1al fuse
M5F79M07L
T902 transformer
11ES2-NTA2B
2SA1175-HFE
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs
Abstract: No abstract text available
Text: 1560 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 59, NO. 6, JUNE 2011 Automatic Hardware Reconfiguration for Current Reduction at Low Power in RFIC PAs Nicolas G. Constantin, Member, IEEE, Peter J. Zampardi, Senior Member, IEEE, and Mourad N. El-Gamal, Member, IEEE
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lg crt monitor circuit diagram
Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJGV0SG00
lg crt monitor circuit diagram
micro servo 9g
samsung lcd tv power supply diagrams
MP 1008 es
uPa2003
8049 microcontroller APPLICATION
LG lcd tv tuner
pioneer car dvd service manual
lg washing machine circuit diagram
8ch pnp DARLINGTON TRANSISTOR ARRAY
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJFV0SG00
uPD3599
transistor nec 2SK2396
MOS FET BUZ 444
MC-7643
nec 3S4M
4305 regulator nec
RD2.4S equivalent
2SC4305 NEC
2sA1441 nec
NPN transistor SST 117
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tda8362b
Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Text: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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1N4003ID
1N4005G
1N4006G
30-Jun-02
30-Jun-01
30-Jun-01
31-Dec-01
tda8362b
OM8384J
OM8383S
TDA8363C
msc 1697
BGY252
tda9155
PHILIPS OM8383S
tda5331t
BGY262
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Untitled
Abstract: No abstract text available
Text: XR-2001 /2/3/A KSr EXAR High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION - W The XR-2001 /2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2001
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
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XR-2011
Abstract: XR2011 XR2013CN XR2013 XR-2012
Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2011/12/13/14
XR-2011/2012/2013/2014
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2011
XR2011
XR2013CN
XR2013
XR-2012
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2002cn
Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
Text: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2001/2/3/4
XR-2001
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
2002cn
XR-2001CN
XR-2002
XR-2002CN
XR-2003
XR-2003CN
XR-2004
XR-2004CN
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XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
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XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
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2SC1541
Abstract: transistor 1548 b 4500cm
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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re-25
700mhz,
2sa795
Tc-25
2sa794
2sa900
V156S
100hz,
250pS
2SC1541
transistor 1548 b
4500cm
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MOTOROLA N-Channel MOSFET 3-334
Abstract: 3-336 motorola MTH20N15 YI45M RF1MB Case 197A-02 VDE 0660 AN569 MTM20N15 S150
Text: MOTOROLA SC IME D I b3b7254 QGôTiQG 4 I XSTRS/R F 7 ~~3 ? - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTH2 0 N15 MTM2 0 N15 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W ER F E T s 20 A M P E R E S
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3b7254
MTH20N15
MTM20N15
to-218ac
MOTOROLA N-Channel MOSFET 3-334
3-336 motorola
YI45M
RF1MB
Case 197A-02
VDE 0660
AN569
MTM20N15
S150
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2SB1568
Abstract: No abstract text available
Text: /'Transistors 2SB1568 2SB 1568 I fcf* * v I/ •- m PNP y U□ > h7 > y 7 * ? - H> h> £ ff Epitaxial Planar PNP Silicon Transistor (Darlington) 1 £ ) j£ fi2 ]iilP !ffl/Low Freq. Power Amp. • W fi^äsEÜl/Dim ensions (Unit : mm) • « ft 1) ? - ' ) >
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2SB1568
2SD2399
O-220FN
75-dm
2SB1568
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TRansistor 1300 free
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES • • • • • • PHP21N06LT, PHB21N06LT SYMBOL QUICK REFERENCE DATA VDSS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics
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PHP21N06LT,
PHB21N06LT
PHP21N06LT
T022Logic
25degC
TRansistor 1300 free
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transistor R 405
Abstract: No abstract text available
Text: SIEMENS SI EGET 25 BFP 405 NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f j = 25 GHz • Gold metalization for high reliability
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Q62702-F1592
OT-343
a235b05
transistor R 405
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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