Untitled
Abstract: No abstract text available
Text: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and
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CHK025A-SOA
CHK025A-SOA
200mA,
DSCHK025ASOA3021
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Untitled
Abstract: No abstract text available
Text: CHK080A-SRA 80W Power Packaged Transistor GaN HEMT on SiC Description The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and
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CHK080A-SRA
CHK080A-SRA
600mA,
DSCHK080A-SRA3148
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Untitled
Abstract: No abstract text available
Text: BC807-16W/-25W/-40W Taiwan Semiconductor Small Signal Product 200mW, PNP Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC807-16W/-25W/-40W
200mW,
MIL-STD-202,
OT-323
C/10s
S1404006
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5Ct transistor
Abstract: 5Cs transistor transistor 5ct marking 5Ct sot transistor 5cs 5Ct marking code marking 5cs marking code 5cs MARKING 5cR MARKING 5ct
Text: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC807-16W/25W/40W
200mW,
OT-323
OT-323
MIL-STD-202,
C/10s
005gram
5Ct transistor
5Cs transistor
transistor 5ct
marking 5Ct sot
transistor 5cs
5Ct marking code
marking 5cs
marking code 5cs
MARKING 5cR
MARKING 5ct
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5Ct transistor
Abstract: 5Cs transistor transistor 5ct
Text: BC807-16W/25W/40W 200mW, PNP Small Signal Transistor Small Signal Diode SOT-323 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate
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BC807-16W/25W/40W
200mW,
OT-323
OT-323
MIL-STD-202,
5Ct transistor
5Cs transistor
transistor 5ct
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FPT-16P-M06
Abstract: MB3761 MB3769A PC-2137
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching
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DS04-27202-3E
MB3769A
MB3769A
16-LEAD
FPT-16P-M06)
F16015S-2C
FPT-16P-M06
MB3761
PC-2137
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VL811
Abstract: transistor bw 51
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching
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DS04-27202-3E
MB3769A
MB3769A
F9601
VL811
transistor bw 51
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MB74HC04
Abstract: MB3761 FPT-16P-M06 MB3769A zener diode 15 v
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching
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DS04-27202-3E
MB3769A
MB3769A
F9601
MB74HC04
MB3761
FPT-16P-M06
zener diode 15 v
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MB74HC04
Abstract: mb3769 FPT-16P-M06 MB3761 MB3769A MB3769AP MB3769APF transistor FET
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-4E ASSP SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching regulator
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DS04-27202-4E
MB3769A
MB3769A
120for
F0309
MB74HC04
mb3769
FPT-16P-M06
MB3761
MB3769AP
MB3769APF
transistor FET
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FPT-16P-M06
Abstract: MB3761 MB3769A differential comparator
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switching
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DS04-27202-3E
MB3769A
MB3769A
FPT-16P-M06
MB3761
differential comparator
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zener diode 15 v
Abstract: 5 volts ZENER DIODE 5Ct transistor dead time control MB3761 mb3769 ups 700 FPT-16P-M06 MB3769A
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-3E ASSP SWITCHING REGULATOR CONTROLLER MB3769A The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band
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DS04-27202-3E
MB3769A
MB3769A
zener diode 15 v
5 volts ZENER DIODE
5Ct transistor
dead time control
MB3761
mb3769
ups 700
FPT-16P-M06
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Abstract: DS04-27202-5E MB3769A
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-5E ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high
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DS04-27202-5E
MB3769A
MB3769A
F0605
VL811
DS04-27202-5E
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27202-6Ea ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu Microelectronics MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to
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DS04-27202-6Ea
MB3769A
MB3769A
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Diode zener 6281
Abstract: MB3769A MB3761 mb3769 FPT-16P-M06 MB3769AP MB74
Text: FUJITSU MICROELECTRONICS DATA SHEET DS04-27202-6Ea ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu Microelectronics MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to
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DS04-27202-6Ea
MB3769A
MB3769A
Diode zener 6281
MB3761
mb3769
FPT-16P-M06
MB3769AP
MB74
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marking code fujitsu MOSFET
Abstract: FPT-16P-M06 MB3761 MB3769A transistor 5ct MB3769AP MB3769A OF FET
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27202-6E ASSP BIPOLAR SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high
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DS04-27202-6E
MB3769A
MB3769A
F0605
marking code fujitsu MOSFET
FPT-16P-M06
MB3761
transistor 5ct
MB3769AP
MB3769A OF FET
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eifect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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PHP15N06E
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
1E-06
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1w200
Abstract: No abstract text available
Text: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.
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BCY58
BCY59
390aW
tof20G
200mA
IG-10Cte*
1w200
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TRANSISTOR A104
Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15
Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general
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BCY58
Ic-10â
R2-700ohm
TRANSISTOR A104
BCY59C
BCY 85
A104
Transistor BCY58
BCY59D
A104 transistor
BCY 68
CEB15
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MRF911
Abstract: LA01 IS21I2 case 317-01
Text: MOTOROLA SC XSTRS/R F 4bE I> b3b?254 M OTOROLA O tm m i T -3 1 - l° l • SEMICONDUCTOR TECHNICAL DATA MRF911 The R F L in e fT * 5.0 GHz 9 30 mA HIG H FREQUENCY TRANSISTOR NPN SILIC O N HIG H FREQUENCY TRANSISTO R NPN SILICON . . . designed primarily for use in high-gain, low-noise tuned and
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110Tb
MRF911
MRF911
LA01
IS21I2
case 317-01
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 770A NPN Silicon RF Transistor F eature • For IF am p lifiers in T V -sa t tuners and for VC R m odulators E S D : E le ctro sta tic d isch a rg e sensitive device, o b se rve handling p recautions! T yp e ^ M arking j BF 770 A ' IS O rd erin g C o d e
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Untitled
Abstract: No abstract text available
Text: 2SD1766 h~7 > y Z $ / T ransistors NPN y ' J ^ > b z ? > ' s Z 2 4, ^ 3 *illli ffl/Meclium Power Amp. 2SD 1766 Epitaxial Planar NPN Silicon Transistor • ^ K T liill/D im e n s io n s U n it: mm • 1) =l P c = 2 W T '* S (40X i .6±0.1 1^ i'-5-cT| .5
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2SD1766
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MB74HC04
Abstract: MB3769 mb74 l7cc MB3769A
Text: The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparatorto construct very high speed switching regulator system up to 700 kHz. Output is suitable for power MOS FET drive
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MB3769A
D-63303
MB74HC04
MB3769
mb74
l7cc
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Halbleiterbauelemente DDR
Abstract: information applikation mikroelektronik Heft 12 information applikation mikroelektronik applikation heft VEB mikroelektronik mikroelektronik DDR Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft
Text: r ï n i k a r ^ e l e l - c Information Applikation t e n a n î l - c m [ n r L ü ^ i s i î s t e k t e n a r i i k Information Applikation HEFT 3 4 : H A LBLEITER V EN TILE und LEISTU N GSELEKTRO N IK v»bmikrooloVtronîk.kartItebknefchtiBtfthnnddtf imvobNombinfttmitiroeloktronik
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