2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
2SC5005
2SC5005
|
Untitled
Abstract: No abstract text available
Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
NE58219
2SC5004
2SC5004
NE58219-A
2SC5004-A
NE58219-T1-A
2SC5004-T1-A
perfor516
|
NEC JAPAN 237 521 02
Abstract: transistor zo 607 2SC5004
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
2SC5004
2SC5004
NEC JAPAN 237 521 02
transistor zo 607
|
ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
|
Original
|
PDF
|
2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
|
transistor zo 607
Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the
|
Original
|
PDF
|
NE58219
2SC5004
2SC5004
NE58219
NE58219-T1
2SC5004-T1
transistor zo 607
zo 607 MA
2SC5004-T1
NE58219-T1
nec 237 521 02
NE582
|
6R199P mosfet
Abstract: IPL60R199CP mosfet 6R199 6R199 IPL60R199 6r199p TRANSISTOR SMD MARKING g1 Diode SMD SJ 99 ipl60r
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.1, 2011-12-20 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
|
Original
|
PDF
|
IPL60R199CP
150mm²
6R199P mosfet
IPL60R199CP
mosfet 6R199
6R199
IPL60R199
6r199p
TRANSISTOR SMD MARKING g1
Diode SMD SJ 99
ipl60r
|
6R199P mosfet
Abstract: mosfet 6R199 IPL60R199CP Benchmark MOSFETs
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
|
Original
|
PDF
|
IPL60R199CP
150mm²
6R199P mosfet
mosfet 6R199
IPL60R199CP
Benchmark MOSFETs
|
6R199P DATA SHEET
Abstract: ipl60r199cp 6R199P 20/Diode SMD SJ 99 JESD22 transistor smd marking Ag
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
|
Original
|
PDF
|
IPL60R199CP
150mm²
6R199P DATA SHEET
ipl60r199cp
6R199P
20/Diode SMD SJ 99
JESD22
transistor smd marking Ag
|
6R199
Abstract: Diode SMD SJ 99
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.2, 2012-01-09 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast
|
Original
|
PDF
|
IPL60R199CP
150mmÂ
6R199
Diode SMD SJ 99
|
6R199P
Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description
|
Original
|
PDF
|
IPL60R199CP
150mm²
6R199P
mosfet 6R199
ipl60r199cp
6R199P DATA SHEET
smd transistor AR 6
JESD22
EL series small size SMD transistor
6R19
IPL60R199
|
Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.1, 2010-06-28 Preliminary Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description Pr The CoolMOS™ CP series offers devices which provide all benefits of a fast
|
Original
|
PDF
|
IPL60R199CP
150mm²
|
TD2400
Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
|
Original
|
PDF
|
2SC5007
2SC5007
TD2400
transistor zo 607
2SC5007-T1
NEC 1555
AK-804 164-1-1
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
|
|
transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
PDF
|
2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
|
TRANSISTOR 2SC 2581
Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS
|
OCR Scan
|
PDF
|
2SC5009
2SC5009
TRANSISTOR 2SC 2581
2sc 1919
NEC NF 932
2sc 1915
TRANSISTOR 2SC 733
|
IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
|
OCR Scan
|
PDF
|
2SC5008
2SC5008
IC SEM 2105
3771 nec
|
928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
|
OCR Scan
|
PDF
|
2SC5008
2SC5008
928 606 402 00
|
transistor marking T2
Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base
|
OCR Scan
|
PDF
|
BCV64
BCV64B
OT-143
BCV63.
DDEU55b
transistor marking T2
TRANSISTOR 436
SCHMITT-TRIGGER application
BCV63
BCV64B
bcv64 SOT143
NPN PNP SOT-143
700 v power transistor
|
NEC 1357
Abstract: LA 8873 TRANSISTOR C 4460
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
|
OCR Scan
|
PDF
|
2SC5004
2SC5004
NEC 1357
LA 8873
TRANSISTOR C 4460
|
SN 4931
Abstract: 2sc 3476 2SC 1885 SN 4931 N
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
|
OCR Scan
|
PDF
|
2SC5005
2SC5005
SN 4931
2sc 3476
2SC 1885
SN 4931 N
|
BFR65
Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.
|
OCR Scan
|
PDF
|
BFQ34
btS3T31
BFR65
BFR65
multi-emitter transistor
n 431 transistor
Transistor PJ 431
|
D 1437 transistor
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the
|
OCR Scan
|
PDF
|
2SC5004
D 1437 transistor
|
Untitled
Abstract: No abstract text available
Text: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is
|
OCR Scan
|
PDF
|
57mS5
T5800,
T5810
MT5800
MT5810
MTPC5800
fj24A
436-S865
OGGG47Ã
MT5810
|
