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    TRANSISTOR - CL 100 Search Results

    TRANSISTOR - CL 100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR - CL 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor TE 901 equivalent

    Abstract: transistor TE 901 IGT6D11 IGT6E11
    Text: IGT6D11,E11 Insulated Gate Bipolar Transistor 101 AMPERES 400, 500 VOLTS EQUIV. RdS ON = 0.27 Cl This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and


    OCR Scan     		PDF IGT6D11 6D11- transistor TE 901 equivalent transistor TE 901 IGT6E11

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF hbS3T31 BUK445-600B -SOT186 BUK445-600B

    55b6

    Abstract: NDC631N
    Text: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode


    OCR Scan     		PDF NDC631N 55b6 NDC631N

    Untitled

    Abstract: No abstract text available
    Text: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and


    OCR Scan     		PDF BC807W; BC808W OT323 BC807W: BC807-16W BC807-25W BC807W BC807-40W

    transistor wm

    Abstract: OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760
    Text: PHILIPS INTERNATIONAL bSE D • 711Dö2b □ D b 5 7 clö T7S J IPHIN BLV10 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and


    OCR Scan     		PDF Db57clà BLV10 76-j16 7Z78515 transistor wm OC172 AF266 BLV10 TRANSISTOR K 135 J 50 7Z77760

    Philips transistor k1

    Abstract: BUK445-600B
    Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 003D575 BUK445-600B PINNING-SOT186 /V-12 Philips transistor k1

    LC 300-S

    Abstract: MMBT5401 MMBT5551
    Text: ÍRANSYS ELECTRONICS LIMITED MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available MMBT5551 Ideal for Medium Power Amplification and Switching -H M [cl TOP VIEW Mechanical Data_


    OCR Scan     		PDF MMBT5401 MMBT5551) OT-23, MIL-STD-202, OT-23 MMBT5401 -10mA, -50mA, LC 300-S MMBT5551

    BFQ42

    Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
    Text: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is


    OCR Scan     		PDF 711002b BFQ42 BFQ42 BLW29 7Z77622 7Z77623 7Z77624 w7 transistor transistor w7 IRF 502 TRANSISTOR transistor j18 Si NPN c25a f0pf philips bfq42

    IBM vga registers

    Abstract: PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9
    Text: IC*- ' fl* CL-GD6340 Preliminary Data Sheet 'CIRRUS LOGIC FEATURES m 100% IBM VGA compatible at the display level • Supports SimulSCAN — displays on CRT and LCD simultaneously ■ Providesfull-colorVGAon8-or512-colorTFT Thin Film Transistor and other active-matrix or color


    OCR Scan     		PDF Providesfull-colorVGAon8-or512-colorTFT CL-GD6340 CL-GD6340 IBM vga registers PE-LD 22621 cirrus vga lg crt monitor rgb cable ERE9

    IRFD110

    Abstract: D82BL2
    Text: PUF IRFD110.111 P82BL2.K2 1.Cl AMPERES 100, 60 VOLTS RPS(ON = 0-6 A FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF 00A///S, IRFD110 D82BL2

    FX-300

    Abstract: MMST3904 MMST3906
    Text: MMST3904 TRANSYS ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMST3906 Ultra-Small Surface Mount Package SOT-323 -H M [cl TO P V IE W Mechanical Data_


    OCR Scan     		PDF MMST3904 MMST3906) OT-323, MIL-STD-202, OT-323 100MHz FX-300 MMST3904 MMST3906

    Untitled

    Abstract: No abstract text available
    Text: MICRO E LE CT RONI CS LTD 41E D b G T I TÛ ê 0 0 0 0 cl ci2 3 MEHK T -3 3 "/^ 2N3055 NPN HIGH POWER SILICON PLANER TRANSISTOR MECHANICAL UUTblWE. GENERAL DESCRIPTION The 2N3055 is an NPN silicon planer power transistor. It is intended for use in class B


    OCR Scan     		PDF 2N3055 2N3055 15Amp l00ohm

    sot-23 marking k3m

    Abstract: MMBTA42 MMBTA92
    Text: TRANSYS MMBTA42 ELECTRONICS NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA92 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37 0.51 B


    OCR Scan     		PDF MMBTA42 MMBTA92) OT-23, MIL-STD-202, OT-23 100MHz sot-23 marking k3m MMBTA42 MMBTA92

    TRANSISTOR 434

    Abstract: BUK856-450IX mj power transistor IEC134 T0220AB
    Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)


    OCR Scan     		PDF 7110fiSt. BUK856-450IX T0220AB TRANSISTOR 434 mj power transistor IEC134

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE


    OCR Scan     		PDF STD8N06 O-251) O-252) O-251 O-252

    SMW45N10

    Abstract: No abstract text available
    Text: SMW45N10 erSiScanix ^LJP incorporated N-Channel Enhancement Mode Transistor TO-247 AD TOP VIEW PRODUCT SUMMARY V BR DSS 100 r DS(ON) •d (Cl) (A) 0.040 45 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    OCR Scan     		PDF SMW45N10 O-247 10peration SMW45N10

    IRFP152

    Abstract: IRFP153
    Text: [MMiRi-lMS [FUT FIELD EFFECT POWER TRANSISTOR IRFP152,153 33 AMPERES 100, 60 VOLTS RqS ON = 0-08 Cl This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFP152 260MA, IRFP153

    Untitled

    Abstract: No abstract text available
    Text: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor Marking 2SA1362 = AE PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN mm 3.0 ~2.B ~ Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2« . 2.4 I TJ 3 J 1’.0 2 J Cl.89 0.60 0.40 ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2SA1362 23fl33T4

    TOKO A 50 GTE

    Abstract: NR421 88-108 rf amplifier TO82 TRANSISTOR
    Text: SAC D I bSD1130 ODBSbGi NATL SEPIICON] {DISCRETE} 6 50 113 0 NATL SEMICOND, Z 28C DISCRETE) 35609 National CL Semiconductor CM *• OC NR421(NPN) VHF amplifier/FM converter transistor j features ■ 0.65pF typical feedback capacitance for excellent ■


    OCR Scan     		PDF NR421 150mV 800KHz 100f/V/M 280JUV/M 10KHz: -28dB 15KHz TOKO A 50 GTE 88-108 rf amplifier TO82 TRANSISTOR

    LC 300-S

    Abstract: MMBT5401 MMBT5551
    Text: ÏR A N S Y S MMBT5551 ELECTRONICS LIMITED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 -H M Dim Min Max [cl A 0.37


    OCR Scan     		PDF MMBT5551 MMBT5401) OT-23, MIL-STD-202, OT-23 MMBT5551 100MHz LC 300-S MMBT5401

    TIP 127A

    Abstract: TIP127A DDD1314 DDD131S JY transistor
    Text: TIP127A P N P Epitaxial Silicon Transistor Semiconductor MEDIUM PO W ER LINEAR SW ITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc “ 75W Tc = 25 “c [ABSOLUTE M AXIM UM RATINGS ITa = 2 5 -cl Characteristic Collector-Base Voltage


    OCR Scan     		PDF O-220 -10mA, -600mA DDD131S TIP 127A TIP127A DDD1314 JY transistor

    KSA910

    Abstract: KSC2310 3050 transistor
    Text: SAMSUNG SEMICONDUCTOR IN C -m e KSA910 D | ? cl b 4 m 2 QOOböOa 1 | 2-3 PNP EPITAXIAL SILICON TRANSISTOR DRIVER STAGE AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS TO-92L •Complement to KSC2310 1Collector-Emitter Voltage Vceo=-150V 1Output Capacitance:


    OCR Scan     		PDF 1b4142 KSA910 KSC2310 -150V O-92L KSC2310 3050 transistor

    IR2419

    Abstract: No abstract text available
    Text: IR2419 6-Unit 400mA Darlington Transistor Array I Description The IR2419 is a 6-drcait driver. The Internal damping diodes enable the IC to drive the inductive load directly. Pin Connections in , Cl _ Features . 1. High output current* I<xn = 400mA MAX.


    OCR Scan     		PDF IR2419 400mA IR2419 400mA 14-pin

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation


    OCR Scan     		PDF Q62702-C2486 OT-363 as35b05 D15DLSB E35bD5 01EDbS4