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    TOSHIBA MARKING CODE TRANSISTOR 2SC2655 Search Results

    TOSHIBA MARKING CODE TRANSISTOR 2SC2655 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING CODE TRANSISTOR 2SC2655 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2655 NPN Transistor

    Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655

    C2655 NPN Transistor

    Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06

    C2655 NPN Transistor

    Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655

    C2655 NPN Transistor

    Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 a1020 pnp transistor A1020 Y pnp A1020 Y transistor BR A1020 A1020 PNP toshiba marking code transistor 2sc2655 A1020 Y transistor

    pnp transistor a1020

    Abstract: A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 s (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor A1020 Y transistor a1020 a1020 pnp transistor A1020 Y pnp 2SA1020 toshiba marking code transistor 2sc2655 A1020 2SC2655

    pnp transistor a1020

    Abstract: A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SA1020 2SC2655 O-92MOD pnp transistor a1020 A1020 transistor transistor a1020 toshiba marking code transistor 2sc2655 A1020 Y pnp A1020 Y A1020 PNP a1020 pnp transistor 2SA1020 toshiba

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    pnp transistor a1020

    Abstract: A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor
    Text: 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1020 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SA1020 2SC2655 150lled pnp transistor a1020 A1020 transistor 2SA1020 A1020 Y pnp toshiba marking code transistor 2sc2655 transistor a1020 a1020 pnp 2SC2655 A1020 a1020 pnp transistor

    tb31224cf

    Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
    Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future


    Original     		PDF SCE0007A tb31224cf transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52