AOTF409
Abstract: AOTF409L
Text: AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high
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AOTF409
AOTF409/L
O220FL
AOTF409
AOTF409L
O-220FL
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Untitled
Abstract: No abstract text available
Text: AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high
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AOTF409
AOTF409/L
O220FL
AOTF409
AOTF409L
O-220FL
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TO-220FL
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
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RJP30E3DPP-M0
R07DS0353EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
TO-220FL
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BCR12LM
Abstract: No abstract text available
Text: Preliminary Datasheet BCR12LM-12LD R07DS0983EJ0100 Rev.1.00 Dec 20, 2012 600V - 12A - Triac Medium Power Use Features • IT RMS : 12 A VDRM : 600 V IFGTI, IRGTI, IRGT: 50 mA Viso: 1800V Insulated Type Planar Passivation Type
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BCR12LM-12LD
R07DS0983EJ0100
E223904
PRSS0003AF-A)
O-220FL)
BCR12LM
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet BCR5LM-12RB R07DS0969EJ0100 Rev.1.00 Dec 20, 2012 600V - 5A - Triac Medium Power Use Features • IT RMS : 5 A VDRM : 600 V IFGTI, IRGTI, IRGT: 15 mA Viso: 1800 V Insulated Type Tj: 150 °C Planar Passivation Type
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BCR5LM-12RB
R07DS0969EJ0100
E223904
PRSS0003AF-A)
O-220FL)
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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Toshiba TMPA8873
Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6
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SCE0001C
S-167
SCE0001D
Toshiba TMPA8873
TA1343NG
TMPA8891
TMPA8893
tmpa8873
tmpa8859
TC90A96BFG
TB1318FG
TMPA8857
TMPA8853
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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TB9061FNG
Abstract: TB6612 toshiba tb6560 TB9056FNG TB6584FNG TB9067FNG sop18 footprint TB6560AHQ TB9061 tb6560ahq application
Text: 2009-3 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Toshiba’s Semiconductors for Motor Control Interface Driver Controller Many of the digital mobile handsets, small office equipment and toy robots are battery-powered,
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SCE0020B
SCE0020C
TB9061FNG
TB6612
toshiba tb6560
TB9056FNG
TB6584FNG
TB9067FNG
sop18 footprint
TB6560AHQ
TB9061
tb6560ahq application
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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2SK2235
Abstract: DDS3400 44t transistor DDS34
Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
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DDS3400
2SK2235
300juA
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
44t transistor
DDS34
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2SJ402
Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X
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2SJ402
O-220FL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance
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17ESQ
2SK1721
O-220FL
0023b43
O-220SM
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Untitled
Abstract: No abstract text available
Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)
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2SK1530
2SJ201
2-21F1B
O-220SM
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2777 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2777 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 10.3MAX. APPLICATIONS
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2SK2777
O-220FL
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SK3090 2SK3090 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O SVI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL 10.3MAX
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2SK3090
O-220FL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 10^7250 0G23314 T O SH IB A FIELD EFFECT T RA N SIST O R 2SK1542 TbT SILICO N N C H A N N E L M O S TYPE L2-;r-M O SIV 2 S K 1 542 INDUSTRIAL APPLICATIONS H IGH SPEED SW IT C H IN G APPLICATION S. RELA Y DRIVE, M O T O R D RIV E A N D D C -D C C O N V ER TER APPLICATION S.
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0G23314
2SK1542
15mii
100//A
O-220SM
Q023b44
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Untitled
Abstract: No abstract text available
Text: TO SH IBA cìGcì755G 005333^ 33T T O S H IB A FIELD EFFECT T R A N S IS T O R 2 S K SILIC O N N C H A N N E L M O S T Y P E tt- M O S II -5 1 6 9 2 INDUSTRIAL APPLICATIONS U nit in mm H IG H S P E E D , H IGH C U R R E N T S W IT C H IN G A P P LIC A T IO N S .
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2SK1692
300/iA
0023b43
O-220SM
Q023b44
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DIODE S4 45a
Abstract: DIODE S4 92 2SK3127
Text: TOSHIBA 2SK3127 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 27 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS
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2SK3127
O-220FL
DIODE S4 45a
DIODE S4 92
2SK3127
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Untitled
Abstract: No abstract text available
Text: 0001492 115296348 I S/ 4 89 / 00- 06 - 29- 14 :05/ P. 0 0 2 2SK3309 [TENTATIVE T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE /r-MOSV 2SK33O9 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS
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2SK3309
2SK33O9
DS-10V,
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transistor Sh 550
Abstract: 2SK1721
Text: 2SK1721 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 7 21 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • Unit in mm 10.3M AX. Low Drain-Source ON Resistance : Rd S(ON) —2.50 (Typ.)
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2SK1721
O-220FL
961001EAA2'
transistor Sh 550
2SK1721
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2884 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE tt- M O S I 2SK2884 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER APPLICATIONS INDUSTRIAL APPLICATIONS TO-220FL Unit in mm • Low Drain-Source ON Resistance : Rd S(ON)= 1*9^ (Typ.)
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2SK2884
O-220FL
20kfl)
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