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    TO-39 CASE TO AMBIENT Search Results

    TO-39 CASE TO AMBIENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    TO-39 CASE TO AMBIENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD5.1J

    Abstract: zener rd9.1esb2 RD6.8ES-T1-AZ(AB2)
    Text: RD4.7JS-RD39JS Silicon Zener Diodes VZ : 4.7 - 39 Volts PD : 400 mW DO - 34 Glass Features — — — — — Complete 4.7 to 39 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data — — Case: DO-34 Glass Case


    Original     		PDF 7JS-RD39JS DO-34 RD16JS RD18JS RD20JS RD22JS RD24JS RD27JS RD30JS RD33JS RD5.1J zener rd9.1esb2 RD6.8ES-T1-AZ(AB2)

    RD22E

    Abstract: RD13E RD2.4E rd24e
    Text: RD2.0E-RD39E Silicon Zener Diodes VZ : 2.0 - 39 Volts PD : 500 mW DO - 35 GLASS Features — — — — — Complete 2.0 to 39 Volts High peak reverse power dissipation High reliability Low leakage current Pb / RoHS Free Mechanical Data — — Case: DO-35 Glass Case


    Original     		PDF 0E-RD39E DO-35 RD27E RD30E RD33E RD36E RD39E RD22E RD13E RD2.4E rd24e

    TO-39, UVC

    Abstract: uvc photodiode photodiode 011
    Text: Photodiode EPD-270-0-0.3-2 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-C clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVC range 230 nm - 285 nm , mounted in hermetically sealed TO-39 package with clear


    Original     		PDF EPD-270-0-0 D-12555 TO-39, UVC uvc photodiode photodiode 011

    UVA photodiode

    Abstract: 4W-08 EPD360
    Text: Photodiode EPD-360-0-0.3-1 10.05.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-A clear UV-glass + filter SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVA range 330 nm - 400 nm , mounted in hermetically sealed TO-39 package with clear


    Original     		PDF EPD-360-0-0 D-12555 UVA photodiode 4W-08 EPD360

    EPD-310-0-0

    Abstract: UV 310 nm
    Text: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear


    Original     		PDF EPD-310-0-0 D-12555 UV 310 nm

    Untitled

    Abstract: No abstract text available
    Text: SCOPE: HIGH PRECISION +10 VOLT REFERENCE Device Type 01 02 Generic Number MX581S x /883B MX581T(x)/883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter H Mil-Std-1835 Case Outline MACY1-X3 3 Lead TO-39 Can


    Original     		PDF MX581S /883B MX581T /883B Mil-Std-1835 Mil-Std-883: Mil-Std-883. Mil-Std-883 MX581S/T/883B

    2N5322

    Abstract: 2N5323
    Text: PNP 2N5322 – 2N5323 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5322 and 2N5323 are PNP transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS


    Original     		PDF 2N5322 2N5323 2N5322 2N5323

    2N5320

    Abstract: 2N5321
    Text: NPN 2N5320 – 2N5321 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case . They are especially intended for high-voltage medium power applications in industrial and commercial equipements. Compliance to RoHS


    Original     		PDF 2N5320 2N5321 2N5320 2N5321

    2n2905

    Abstract: 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905
    Text: PNP 2N2905 – 2N2905A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2905 and 2N2905A are PNP transistors mounted in TO-39 metal case . They are intended for high speed switching and general purpose applications. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol


    Original     		PDF 2N2905 2N2905A 2N2905 2N2905A 2N2905 equivalent transistor 2N2905 2N2905 transistor 2N2905a equivalent ST 2N2905 of 2n2905 PNP 2N2905

    Untitled

    Abstract: No abstract text available
    Text: ^£.mi- 2onductoi , Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BCX23 BCX39 BCX 23 and BOX 39 are epitaxial PNP silicon planar transistors in TO 18 metal case (18 A 3 DIN 41876). The collector is electrically connected to the case. These transistors


    Original     		PDF BCX23 BCX39

    mm5416

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 772 283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: [email protected] TYPE: MM5416 CASE OUTLINE: TO-205AD (TO-39) PNP SILICON TRANSISTOR


    Original     		PDF MM5416 O-205AD mm5416

    zener 7.5 B 49 sot 323

    Abstract: MMBZ5238BW
    Text: MMBZ52xBW Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.2 Watts FEATURES SOT-323 • Planar die construction • 200mW power dissipation rating SOT-323 Dim. MECHANICAL DATA • Case: SOT-323 Plastic • Case Material: “Green” molding compound, UL


    Original     		PDF MMBZ52xBW OT-323 OT-323 200mW J-STD-020D 2002/95/EC May-2009, KSJR10 zener 7.5 B 49 sot 323 MMBZ5238BW

    bfy64

    Abstract: transistor BFY64 bfx64
    Text: BFY64 HIGH-CURRENT GENERAL PURPOSE TRANSISTOR DESCRIPTION The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels up to 500 mA, line driver, memory applications and


    Original     		PDF BFY64 BFX64 bfy64 transistor BFY64

    AFY18

    Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
    Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.


    OCR Scan     		PDF AFY18 AFY18 Q60106-Y18- AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE ]> □ □27'UT 5b7 • APX bbS3T31 BSX45 to 47 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


    OCR Scan     		PDF bbS3T31 BSX45 BSX45 BSX46 BSX47 BSX46â

    Y2923

    Abstract: 2sc 965 transistor b0961 Q62702-S154 lfe10
    Text: 5SC D • û23SbOS GGQM'îlS b « S I E G 7 ^ ? - ^ 3 2 N 4033 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistor is particularly intended for


    OCR Scan     		PDF 023SbOS Q62702-S154 fl235b05 Y2923 2sc 965 transistor b0961 Q62702-S154 lfe10

    transistor BC 153

    Abstract: transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series
    Text: ESC » m ö23SbQS 0Q043.04 2 « S I E G , NPN Silicon Transistors SIEMENS AKTIENGESELLSCHÂF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF


    OCR Scan     		PDF 23SbQS 0Q043 60203-X 60203-X140-V6 60203-X140-P 140/BC160 62702-C228-S2 62702-C719 transistor BC 153 transistor C719 TRANSISTOR C236 TRANSISTOR BC 141 transistor BC SERIES TRANSISTOR BC 140 transistor BC 153 a TRANSISTOR BC140 c236 transistor BC transistor series

    Transistor BSX 63-10

    Abstract: Transistor BSX 62-16 TA820 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B Bsx62
    Text: ESC D • 023Sb05 000401=1 T m S I Z G { -r-Z?-'7 NPN Silicon Planar Transistors BSX 62 BSX 63 - - SIEMENS AKTIENÛESELLSCHAF - BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are particularly


    OCR Scan     		PDF 23Sb05 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B 60218-X63-C 023SbQS Transistor BSX 63-10 Transistor BSX 62-16 TA820 Q60218-X62 Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63 Q60218-X63-B Bsx62

    transistor BC 157

    Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
    Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10

    Defense Electronics Supply Center

    Abstract: 5962-8998101X
    Text: REVISIONS LTR DATE DESCRIPTION APPROVED YR-HO-DA Change input to output voltage differential in 1.3, 1.4, VREE, 'Orline' an<* delta 1Ani conditions. Change I. test Tinits for conditions CVIN - Vol|T> = 2.5 V from 0.05 A to 0.075 A. Add case outline Y (TO-39).


    OCR Scan     		PDF 5962-R054-94. MIL-BUL-103. MIL-BUL-103 00470a Defense Electronics Supply Center 5962-8998101X

    Untitled

    Abstract: No abstract text available
    Text: l l N AMER PHILIPS/DISCRETE b^E • J> bbS3T31 002767b 3 m I IAPX BSV15 to 17 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-39 metal envelopes with the collector connected to the case. These transistors are intended for general industrial applications.


    OCR Scan     		PDF bbS3T31 002767b BSV15 BSV15 BSV16 BSV17 bbS3S31

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan     		PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    BSX45

    Abstract: Z823 BSX46 BSX47 marx generator silicon planar epitaxial transistors
    Text: N AMER PHI LIP S/DISCRETE bTE J> m bbSBTBl □□57cllci Sb7 M IAPX BSX45 to 47 Jl SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes w ith the collector connected to the case. These transistors are intended fo r general industrial applications.


    OCR Scan     		PDF bb53131 57cllci BSX45 BSX46 BSX47 BSX45- 7Z82390 Z8239 Z823 BSX47 marx generator silicon planar epitaxial transistors