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    onsemi TN3019A

    TRANS NPN 80V 1A TO226-3
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    Rochester Electronics LLC TN3019A

    TRANS NPN 80V 1A TO226-3
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    Fairchild Semiconductor Corporation TN3019A

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    Bristol Electronics TN3019A 390
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    Quest Components TN3019A 304
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    Rochester Electronics TN3019A 4,238 1
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    TN3019 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN3019 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    TN3019 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    TN3019 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    TN3019 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    TN3019 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    TN3019 Micro Electronics Semiconductor Device Data Book Scan PDF
    TN3019 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TN3019 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TN3019 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TN3019 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN3019 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TN3019 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    TN3019 National Semiconductor Transistors Scan PDF
    TN3019 National Semiconductor NPN Medium Power Transistors Scan PDF
    TN3019 National Semiconductor Medium Power Transistors Scan PDF
    TN3019 National Semiconductor Medium Power NPN Transistors Scan PDF
    TN3019 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
    TN3019A National Semiconductor NPN Medium Power Transistors Scan PDF

    TN3019 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 BC337-16 TN3019A

    CEB120

    Abstract: No abstract text available
    Text: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    PDF TN3019A O-226 CEB120

    transistor TD-100 le

    Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
    Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    PDF TN3019A O-226 transistor TD-100 le pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box

    OF TRANSISTOR BC337

    Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 BC337-16 TN3019A OF TRANSISTOR BC337 TRANSISTOR BC337-25 transistor 33725 bc337 m transistor BC337-16 BC337-25 CBVK741B019 F63TNR

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 BC337-16 TN3019A

    TN3019A

    Abstract: No abstract text available
    Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    PDF TN3019A O-226 TN3019A

    bc337 cross-reference

    Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 TN3019A BC337 BC33716TA BC33716BU bc337 cross-reference bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross

    TN3019A

    Abstract: No abstract text available
    Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    PDF TN3019A O-226 TN3019A

    C 337-25

    Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
    Text: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    PDF BC337-16 BC337-25 TN3019A BC337-16 C 337-25 C 33725 BC337-25 NPN general purpose transistor BC337 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725

    TN3019

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TM3019 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +55 dBm Typ. Second Order Two Tone Intercept Point . +50 dBm (Typ.) Third Order Two Tone Intercept Point . +36 dBm (Typ.)


    Original
    PDF TM3019 TM3019, TN3019, BX3019, TN3019

    2N6718

    Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
    Text: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100


    Original
    PDF O-237 2N6722 2N6723 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724 2N6718 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


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    PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original
    PDF

    mpsa06 539

    Abstract: No abstract text available
    Text: ¿2h STtiGhGG O E T ia ^ I NPN Transistors a Discrete POWER & Signal Technologies National NPN Medium Power ¡'«icond.cor- V Device No. Case Style PN3568 TO-92 92 TN3019A TO-226 (99) MPS80S CBO VCEO V EBO (V) Min (V) Min (V) Min 80 60 5 140 80 7 <nA)@ "


    OCR Scan
    PDF PN3568 MPS80S MPSA05 MPSA06 TN5320A TN3440A TN6714A O-226 mpsa06 539

    si167

    Abstract: No abstract text available
    Text: ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power am plifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. AbSOlUtG Maximum RâtinÇjS


    OCR Scan
    PDF TN3019A si167

    Untitled

    Abstract: No abstract text available
    Text: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum RatinQS


    OCR Scan
    PDF TN3019A O-226

    common collector amplifier circuit designing

    Abstract: bd113 npn 4111 25CC TN3019A
    Text: Semiconductor"1 TN3019A D iscrete P O W ER & S ig n a l Technologies ALM National TN3019A c TO-226 Bc NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12.


    OCR Scan
    PDF TN3019A LS01130 00MQL37 D113a 00M0b3Ã common collector amplifier circuit designing bd113 npn 4111 25CC TN3019A

    T1P42C

    Abstract: No abstract text available
    Text: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN


    OCR Scan
    PDF O-220 O-220 O-237-2 00014QÃ T1P42C

    tn637

    Abstract: TN2219 TN2219A TN2270 TN3019 TN3020 TN3053 TN368 TN3742 TN391
    Text: TO*237 Plastic Package Translators NPN Maximum Ratings Type No. TN2219 TN2219A TN2270 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO Pd (V) Min (V) Min (V) Min (W) Tc=25°c 60 30 5 0.75 75 60 40 45 6 7 Ô.75 0.75 (A) (A)


    OCR Scan
    PDF TN2219 O-237-2 TN2219A TN391 O-237 TN392 TN393 tn637 TN2270 TN3019 TN3020 TN3053 TN368 TN3742

    MPSD05

    Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
    Text: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50


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    PDF MPSA05 O-92A MPSA55 MPSA06 MPSA56 MPSA55 MPSA05 MPSA56 MPSD05 MPSD55 MSB492 PN2221 PN2221A PN2906

    2N6730

    Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
    Text: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2N6730 2N6719

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Text: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 CENW64 2N6730 2N6719

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    2A 5A10

    Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
    Text: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25


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    PDF bSG113Q GQ377aS NSE181 PN3568 TN2017 O-202 O-237 TN2102 2N5321 2A 5A10 NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 D40D10 D40D11 D40D13