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    TIP 133 TRANSISTOR Search Results

    TIP 133 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP 133 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    THERMISTORS SCK 055

    Abstract: 103JM1A h3475 KC222 105rg1k ST2R503B THERMISTORS SCK 016 102FH1K Pt 3750 rtd PR103J2
    Text: Table of Contents Page Mission Company Overview .3 General Information .4-5


    Original     		PDF

    IRG4PH40KD

    Abstract: IRGPH40KD2 IRGPH40MD2
    Text: PD- 9.1577A IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, V CC = 720V , TJ = 125°C, VGE = 15V


    Original     		PDF IRG4PH40KD IRG4PH40KD IRGPH40KD2 IRGPH40MD2

    CBC 184 transistor

    Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    Original     		PDF AT-31625 OT-223 AT-31625 CBC 184 transistor TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625-TR1 transistor 2222a 96t1

    CBC 184 transistor

    Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
    Text: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    Original     		PDF AT-31625 OT-223 AT-31625 5965-5911E CBC 184 transistor CBC 184 c transistor transistor 2222a data sheet AT-31625-BLK AT-31625-TR1

    low noise, hetero junction fet

    Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    Original     		PDF NE32500, NE27200 NE32500 NE27200 NE32500 low noise, hetero junction fet high frequency transistor ga as fet s11 diode shottky nec, hetero junction transistor GA 88 KA 88

    NEC D74

    Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
    Text: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped


    Original     		PDF NE32900 NE32900 NEC D74 transistor D113 NEC D76 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70

    4066 spice model

    Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
    Text: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor


    Original     		PDF MBC13900/D MBC13900 MBC13900T1 OT-343) OT-343 MBC13900 SC-70 318M-01, 4066 spice model marking r4 SOT343 RF LNA" 1 to 2 GHz" spice

    cmos databook

    Abstract: BUZ 215 diagram F90H lcd circuit diagram for samsung BASIC COMPARATOR CIRCUITS digital watch lcd circuit DATABOOK
    Text: DATABOOK ERRATA This document contains the corrections of errors, typos and omissions in the following document. Samsung 4-bit CMOS KS57C2504 Microcontroller Databook Document Number: 20-57-2504 Publication: April 1995 KS57C2504 DATABOOK ERRATA ERRATA Samsung 4-bit CMOS KS57C2504 Microcontroller Data Book


    Original     		PDF KS57C2504 KS57C2504 cmos databook BUZ 215 diagram F90H lcd circuit diagram for samsung BASIC COMPARATOR CIRCUITS digital watch lcd circuit DATABOOK

    Untitled

    Abstract: No abstract text available
    Text: PLASTIC SIDELOOKER PAIR yPTOELECI QPE1113 W IO W » • : 08 DIA. .08 DIA. .050 1.27 .050 (1.27) .062 DIA. .062 DIA. T .200 (5.08) EM ITTER C O LLE CTO R h .020 (0.51) SQ NOM 100^(2.54) .020 (0.51) .020 (0.51) - . 1 7 5 (4 .44) - —.175 (4.44)— PH O TO TRANSISTOR


    OCR Scan     		PDF QPE1113 ST2171 QPE1113 940nm

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


    OCR Scan     		PDF TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor

    2SA1563

    Abstract: No abstract text available
    Text: Ordering number : EN3287 FC 133 No.3287 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features • On-chip bias resistances (Rl = 10k£2, R2 = 47kft) • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN3287 47kft) FC133 2SA1563, 2SA1563

    transistor d155

    Abstract: ST2171 QPE1113 TIP 133 transistor TIP 40c transistor TRANSISTOR tip 127
    Text: [*o PLASTIC SIDELOOKER PAIR OPTOELECTRONICS QPE1113 PACKAGE DIMENSIONS .087 2.22 —| .08 DIA. .08 DIA. .050(1.27) .062 DIA. .500 (12.7) MIN _ .0 2 0 (0.51) SQ NOM .1 0 0 (2 .5 4 )-! .100 (2 .5 4 )- f- .100(2.54) .020 (0.51) .020 (0.51 )J - . 1 7 5 (4 .4 4 ) -


    OCR Scan     		PDF QPE1113 ST2171 QPE1113 940nm transistor d155 ST2171 TIP 133 transistor TIP 40c transistor TRANSISTOR tip 127

    PHOTO TRANSISTOR 940nm

    Abstract: sidelooker DIODE bvoe
    Text: FQ PLASTIC SIDELOOKER PAIR OPTOELECTHOIIICS QPE1113 PACKAGE DIMENSIONS .08 DIA. 08 DIA. .050 1.27 J .050 (1 .2 7 )1 .062 DIA. .062 DIA .020 (0.51) SQ NOM .100 ( 2 .5 4 )- "ÏÔo"(2.54) .020 (0.51) .020 (0.51 )J —.175 ( 4 .4 4 ) — .175 ( 4 .4 4 )— -


    OCR Scan     		PDF QPE1113 ST2171 ST2171 QPE1113 940nm PHOTO TRANSISTOR 940nm sidelooker DIODE bvoe

    TIP 133 transistor

    Abstract: No abstract text available
    Text: EO PLASTIC T-1 PAIR OPTOELECTRONICS QPC1213 PACKAGE DIMENSIONS REFERENCE SURFACE . 126 3.20 .106(2.69) REFERENCE SURFACE — r ,030(0.76)> NOM T — .203(5.16) .133(4.65) J_ .030(0.76)' NOM L .800 (20.3) MIN T 1-.800(20.3) MIN j_ i : i— .050(1.27)


    OCR Scan     		PDF QPC1213 ST2138 ST2136 QPC1213 TIP 133 transistor

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,


    OCR Scan     		PDF IRG4PH40KD

    Untitled

    Abstract: No abstract text available
    Text: m MH88612 M ITEL Subscriber Line Interface Circuit SLIC Preliminary Information 2 • Transformerless 2-wire to 4-wire conversion • Battery and ringing feed to line • Off-hook and dial pulse detection • Ring ground over-current protection • Adjustable constant current feed


    OCR Scan     		PDF MH88612 DD13323

    FET transistors with s-parameters

    Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
    Text: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF 000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918

    MA4F004

    Abstract: No abstract text available
    Text: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X


    OCR Scan     		PDF MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300

    Untitled

    Abstract: No abstract text available
    Text: MH88612K Subscriber Line Interface Circuit Preliminary Information O rdering Inform ation • Input im pedance 600 £2 • Transform erless 2-w ire to 4-w ire conversion • Battery and ringing feed to line • O ff-hook and dial pulse detection Ring ground over-current protection


    OCR Scan     		PDF MH88612K 88612K

    2222A

    Abstract: No abstract text available
    Text: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 1997H 5965-5911E 2222A

    transistor I 17-13 0773

    Abstract: No abstract text available
    Text: H EW L E T T I x l PA CK A R D w a rn 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 transistor I 17-13 0773

    NEC 82 A 0839

    Abstract: NE27200 NE32500
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable


    OCR Scan     		PDF NE32500, NE27200 NE32500 NE27200 NEC 82 A 0839

    FZH 161

    Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
    Text: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency


    OCR Scan     		PDF AT-31625 OT-223 AT-31625 5965-5911E FZH 161 FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171

    Untitled

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRQKICS CNY28 M H iM B SYMBOL MILLIMETERS MIN. -0P r - i b ,t @ *»i MAX. .433 10.7 11.0 .422 A, 3.0 3.2 .119 .125 A, 3.0 3.2 .119 .125 b, D D, d2 e2 E L Q .750 .50 NOM. .024 t . 0 3 0 2 .020 NOM. 2 24.3 24.7 .957 .972 11.0


    OCR Scan     		PDF CNY28 74tbflSl