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    THE 2002 IS A COMMON BASE TRANSISTOR Search Results

    THE 2002 IS A COMMON BASE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation

    THE 2002 IS A COMMON BASE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1923

    Abstract: 10ID
    Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1923 2sc1923 10ID

    2sC1923 transistor

    Abstract: 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30
    Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1923 2sC1923 transistor 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30

    IY TRANSISTOR

    Abstract: 2sc1923 2sC1923 transistor 10ID
    Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1923 IY TRANSISTOR 2sc1923 2sC1923 transistor 10ID

    2sC1923 transistor

    Abstract: 2sc1923 10ID IY TRANSISTOR
    Text: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be


    Original     		PDF 2SC1923 2sC1923 transistor 2sc1923 10ID IY TRANSISTOR

    UN5213

    Abstract: UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te


    Original     		PDF 2002/95/EC) UNR521x UN521x UN5213 UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218

    UNR9211G

    Abstract: UNR9212G UNR9214G UNR921FG UNR9210G UNR9213G UNR9215G UNR9216G UNR9217G UNR9218G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR921xG UNR9211G UNR9212G UNR9214G UNR921FG UNR9210G UNR9213G UNR9215G UNR9216G UNR9217G UNR9218G

    UNR5211G

    Abstract: UNR521LG UNR5216G UNR5210G UNR5212G UNR5213G UNR5214G UNR5215G UNR5217G UNR5218G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR521xG UNR5211G UNR521LG UNR5216G UNR5210G UNR5212G UNR5213G UNR5214G UNR5215G UNR5217G UNR5218G

    KSC2383

    Abstract: tv vertical ic circuit list
    Text: KSC2383 KSC2383 Color TV Audio Output & Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings


    Original     		PDF KSC2383 O-92L KSC2383 tv vertical ic circuit list

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0222 (UN222) Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12° • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) UNA0222 UN222)

    UNR5210

    Abstract: UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218 UNR5219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2


    Original     		PDF 2002/95/EC) UNR521x UN521x UNR5210 UNR5211 UNR5212 UNR5213 UNR5214 UNR5215 UNR5216 UNR5217 UNR5218 UNR5219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR921xG UNR9210G UNR9211G UNR9212G UNR9213G UNR9214G UNR9215G UNR9216G UNR9217G

    MBL105

    Abstract: 7808 voltage regulator 7808 U2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 01 Philips Semiconductors Preliminary specification BLF0810-180; BLF0810S-180 Base station LDMOS transistors FEATURES


    Original     		PDF M3D379 M3D461 BLF0810-180; BLF0810S-180 OT502A BLF0810S-180 SCA73 budgetnum/printrun/ed/pp13 MBL105 7808 voltage regulator 7808 U2

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR521xG UNR5210G UNR5211G UNR5212G UNR5213G UNR5214G UNR5215G UNR5216G UNR5217G

    UNR9211G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR921xG Series Silicon NPN epitaxial planar type For digital circuits • Features ■ Package • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR921xG UNR9210G UNR9211G UNR9212G UNR9213G UNR9214G UNR9215G UNR9216G UNR9217G UNR9211G

    top 8901

    Abstract: BLF0810-180 BLF0810S-180 7808 voltage regulator MBL10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Mar 05 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-180; BLF0810S-180 FEATURES


    Original     		PDF M3D379 M3D461 BLF0810-180; BLF0810S-180 BLF0810-180) BLF0810S-180) SCA73 budgetnum/printrun/ed/pp13 top 8901 BLF0810-180 BLF0810S-180 7808 voltage regulator MBL10

    7808 voltage regulator

    Abstract: BLF0810-90 BLF0810S-90 MBL105
    Text: DISCRETE SEMICONDUCTORS DATA SHEET e M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Preliminary specification 2002 Mar 18 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF0810-90; BLF0810S-90 FEATURES


    Original     		PDF M3D379 M3D461 BLF0810-90; BLF0810S-90 BLF0810-90) BLF0810S-90) SCA73 budgetnum/printrun/ed/pp13 7808 voltage regulator BLF0810-90 BLF0810S-90 MBL105

    UNR2210

    Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and


    Original     		PDF 2002/95/EC) UNR221x UN221x UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type (0.425) Unit: mm For digital circuits 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 M Di ain sc te


    Original     		PDF 2002/95/EC) UNR511x UN511x

    UNR911NG

    Abstract: UNR9110G UNR9111G UNR9112G UNR9113G UNR9114G UNR9115G UNR9116G UNR9117G UNR9118G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR911xG Series Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Resistance by Part Number


    Original     		PDF 2002/95/EC) UNR911xG UNR9110G UNR9111G UNR9112G UNR9113G UNR9114G UNR911NG UNR9110G UNR9111G UNR9112G UNR9113G UNR9114G UNR9115G UNR9116G UNR9117G UNR9118G

    2SC3311A

    Abstract: 2SC3354 UP04599
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)


    Original     		PDF 2002/95/EC) UP04599 OD-723 2SC3354 2SC3311A 2SC3311A 2SC3354 UP04599

    NPN SMALL SIGNAL TRANSISTOR

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0235 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives For small motor drive circuits in general


    Original     		PDF 2002/95/EC) UNA0235 NPN SMALL SIGNAL TRANSISTOR

    pt 4115

    Abstract: UN4110 UN4111 UN4112 UN4113 UN4114 UNR4110 UNR4111 UNR4112 UNR4113
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR411x Series (UN411x Series) Silicon PNP epitaxial planar type Unit: mm 4.0±0.2 2.0±0.2 • Features 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si


    Original     		PDF 2002/95/EC) UNR411x UN411x pt 4115 UN4110 UN4111 UN4112 UN4113 UN4114 UNR4110 UNR4111 UNR4112 UNR4113