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    TEW JAPAN Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    CC1100ERGPT Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy
    CC1100ERGPR Texas Instruments Low-Power Sub-1GHz RF Transceiver for China and Japan frequency bands 20-QFN -40 to 85 Visit Texas Instruments Buy

    TEW JAPAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5100 B3 transmitter

    Abstract: trx 434 TDA5100 B2 tda 5100 B3 tdk 5100 B3 TDA5100 b3 5100 b2 TRX 434 RF TRANSMITTER 5100-b2 TRX 434 transmitter
    Text: Wireless Control Documentation & Development Tooling Overview Copyright 2010 Infineon Technologies AG. All rights reserved. October 2010 Purpose of this Document: This document gives a comprehensive overview about all available documentation and development tooling


    Original     		PDF SP000643658 TDA5240 SP000799568 TDA5235 SP000799564 TDA5225 SP000775162 TDA5251-TDA5251 SP000078507 TDA5255-TDA5255 5100 B3 transmitter trx 434 TDA5100 B2 tda 5100 B3 tdk 5100 B3 TDA5100 b3 5100 b2 TRX 434 RF TRANSMITTER 5100-b2 TRX 434 transmitter

    KSS Crystals

    Abstract: KSS 12Mhz crystal oscillator kss japan tcxo TCXO KSS 12,000 MHz Crystal oscillator VXE4-1055-12M000 12Mhz crystal oscillator KSS oscillator 60x35 CX-4025S
    Text: 1.0 National Semiconductor Application Note, Confidential April 2005 Revision 0.3 LMX9820A TM The National Semiconductor LMX9820A Bluetooth Serial Port module is the next generation of the current LMX9820 and is pin-to-pin compatible. The LMX9820A includes some key changes that must be considered in the


    Original     		PDF LMX9820A LMX9820A LMX9820 LMX9820A. LMX9820 KSS Crystals KSS 12Mhz crystal oscillator kss japan tcxo TCXO KSS 12,000 MHz Crystal oscillator VXE4-1055-12M000 12Mhz crystal oscillator KSS oscillator 60x35 CX-4025S

    CAT35C804A

    Abstract: No abstract text available
    Text: Preliminary CAT35C804A Preliminary CAT35C804A 4K-Bit Secure Access Serial E2PROM FEATURES • Single 5V Supply ■ Commercial and Industrial Temperature Ranges ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ I/O Speed: 9600 Baud –Clock Frequency: 4.9152 MHz Xtal


    Original     		PDF CAT35C804A CAT35C804A 300-T

    Memory Organization

    Abstract: CAT33C804A
    Text: Preliminary CAT33C804A Preliminary CAT33C804A 4K-Bit Secure Access Serial E2PROM FEATURES • Single 3V Supply ■ Commercial and Industrial Temperature Ranges ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ 100,000 Program/Erase Cycles ■ Memory Pointer WRITE Protection


    Original     		PDF CAT33C804A CAT33C804A 300-T Memory Organization

    f 93c66

    Abstract: 93C46 93C66 93C57 93c66 6 93C86 93C46 DATASHEET 93C56 TEW JAPAN
    Text: AND8429/D Former Catalyst Document Number MD−6000 Using ON Semiconductor's Serial EEPROMs in Shared Input/Output Configuration http://onsemi.com Prepared by: ON Semiconductor APPLICATION NOTE ON Semiconductor’s family of serial E2PROMs utilizes 4 signals for the communication interface; Chip Select CS


    Original     		PDF AND8429/D MD-6000 f 93c66 93C46 93C66 93C57 93c66 6 93C86 93C46 DATASHEET 93C56 TEW JAPAN

    93C46W

    Abstract: 93C46L
    Text: CAT93C46 1 Kb Microwire Serial EEPROM Description The CAT93C46 is a 1 Kb Serial EEPROM memory device which is configured as either 64 registers of 16 bits ORG pin at VCC or 128 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C46 features a


    Original     		PDF CAT93C46 CAT93C46/D 93C46W 93C46L

    CAT93C86

    Abstract: 93C86S
    Text: CAT93C86 CAT93C86 16K-Bit Serial E2PROM FEATURES • High Speed Operation: 3MHz ■ Fast Nonvolatile Write Cycle: 5ms Max ■ Low Power CMOS Technology ■ Hardware and Software Write Protection ■ 1.8 to 6.0Volt Operation ■ 1024 x 16 or 2048 x 8 Selectable Serial Memory


    Original     		PDF CAT93C86 16K-Bit CAT93C86 300-T 93C86S

    93C56 catalyst

    Abstract: 93C56 memory 93C46 93C46 6 93C46 93C66 93c66 6 93C66 catalyst 602-8443
    Text: CAT93C46/56/66 CAT93C46/56/66 1K/2K/4K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz ■ Power-Up Inadvertant Write Protection ■ Low Power CMOS Technology ■ 1,000,000 Program/Erase Cycles ■ 1.8 to 6.0 Volt Operation ■ 100 Year Data Retention


    Original     		PDF CAT93C46/56/66 93C56/66 CAT93C46/56/66 300-T 93C56 catalyst 93C56 memory 93C46 93C46 6 93C46 93C66 93c66 6 93C66 catalyst 602-8443

    CAT93C57

    Abstract: 93C57
    Text: CAT93C57 CAT93C57 2K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz ■ Self-Timed Write Cycle with Auto-Clear ■ Low Power CMOS Technology ■ Sequential Read Operation ■ Wide Operating Voltage Range ■ Power-Up Inadvertant Write Protection


    Original     		PDF CAT93C57 CAT93C57 300-T 93C57

    Untitled

    Abstract: No abstract text available
    Text: CAV93C66 4 Kb Microwire Serial CMOS EEPROM Description The CAV93C66 is a 4 Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The device features


    Original     		PDF CAV93C66 CAV93C66 CAV93C66/D

    Untitled

    Abstract: No abstract text available
    Text: M M S-10& -01-P -S H SPECIFICATIONS Materials: _ H I-TEW If* U Insulator Material: Black Liquid Crystal Polymer Contact Material: Phosphor Bronze Operating Temp Range: -65 C to +12 5 C wiih Gold -6 5 'C to +105 C with Tin Plating: So or Au over 50|i“ 1,27pm Ni


    OCR Scan     		PDF -01-P 13mrn) 1-800-SAMTEC-9 5-745-W

    200a1

    Abstract: No abstract text available
    Text: O K I Semiconductor_ MTC825121 6 - X X 0 A 1 _ SRAM CARD DESCRIPTION The MTC8251216-150A1 and MTC8251216-200A1 are 512K bytes SRAM cards in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development


    OCR Scan     		PDF MTC825121 MTC8251216-150A1 MTC8251216-200A1 CR2025 MTC82S1216-xxOAI 200a1

    200a1

    Abstract: No abstract text available
    Text: O K I Semiconductor_ MTC821281 6-X X 0A 1_ SRAM CARO DESCRIPTION The MTC8212816-150A1 and MTC8212816-200A1 are 128K bytes SRAM cards in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA


    OCR Scan     		PDF MTC821281 MTC8212816-150A1 MTC8212816-200A1 CR2025 MTC8212816-xxOA1 200a1

    Untitled

    Abstract: No abstract text available
    Text: CHEZ Semiœnductor M T C 821M 216 -1 8 0 0 1 SRAM CARD DESCRIPTIO N The MTC821M216-150G1 is 1.25M bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]


    OCR Scan     		PDF MTC821M216-150G1 CR2025 150ns 16bits

    Untitled

    Abstract: No abstract text available
    Text: Q m Semiconductor_ MTC822 S 716 - 150B1_ \ SRAM CARO DESCRIPTION The MTC8225716-150B1 is 256K bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES


    OCR Scan     		PDF MTC822 150B1_ MTC8225716-150B1 CR2025 150ns 16bits MTC822S716-1S0B1

    mtc62

    Abstract: No abstract text available
    Text: Semiconductor MTC8251316-150G1 SRAM CARD DESCRIPTION The MTC8251316-150G1 is 512K bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]


    OCR Scan     		PDF MTC8251316-150G1 MTC8251316-150G1 CR2025 150ns 16bits 261318-150Q1 mtc62

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MTC8201 Ml 6 - 150 B 1 SRAM CARD DESCRIPTION The MTC8201M16-150B1 is 1M bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]


    OCR Scan     		PDF MTC8201 MTC8201M16-150B1 CR2025 150ns 8bits/512K 16bits MTC82O1MHM8O01

    FF20H

    Abstract: MTCM PVDX
    Text: O K I Semiconductor MTC8825616-250x2 FLASH MEMORY CARD DESCRIPTION The MTC8625616-250A2, MTC8625616-250B2 and MTC8625616-250C2 are 256Kbytes flash memory cards in conformity with the IC memory card guideline Ver. 4 of the Japan Electronic Industry Development Association, Inc.


    OCR Scan     		PDF MTC8825616 MTC8625616-250A2, MTC8625616-250B2 MTC8625616-250C2 256Kbytes 68pins 256Kbytes MTC8625616-25QA2 MTC8625616-250C2 FF20H MTCM PVDX

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


    OCR Scan     		PDF 8225716-xxOB1 TheMTC8225716-150Bl MTC8225716-200B1 256Kbytes 68pins CR2025 1S96G

    CVS22

    Abstract: I200A
    Text: SHARP SPEC No. E L 0 7 Y 0 8 5 ISSU E: Dec. 01 1995 To ; - REFERENCE SPECIFICATIONS Product Type 64k SRAM L H 5 1 64ASHN Kodel No. LH516AS8 JKThis specifications contains 2 0 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.


    OCR Scan     		PDF 64ASHN LH516AS8) LH516AS8 200mm CV522 EC28SPTS CV524 OPW-P-225 OP16-P-225 P24-P-450 CVS22 I200A

    7427 pin configuration

    Abstract: No abstract text available
    Text: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


    OCR Scan     		PDF MTC821M216-xxOBI MTC821M216-150B1 MTC821M216-200B1 68pins CR2025 7427 pin configuration

    TEW JAPAN

    Abstract: No abstract text available
    Text: rilk Stewar : onn^cio The Category 5 W ideB and* Plug Cat 5 P l u g s , 3 7 Series M ade for Cat 5, Fit for G ig ab it for the dem an ds of ultrahigh bandw idth applications. Surpassing Category 5 1000 Mbps and Beyond D esigned to provide exceptional pe rfo rm an ce in


    OCR Scan     		PDF SCS-WBP-6/98-5M TEW JAPAN

    MTC62

    Abstract: MTC821
    Text: O K I Semiconductor MTC821M516-xxOBI Static RAM G E N E R A L DESCRIPTION The MTC821M51éi-150Bl and MTC821M516-200B1 are 1.5M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


    OCR Scan     		PDF MTC821M516-xxOBI MTC821M51 i-150Bl MTC821M516-200B1 68pins CR2025 MTC62 MTC821

    static ram 512K

    Abstract: No abstract text available
    Text: O K I Semiconductor M T C 8 2 5 1 3 1 6 -xxO BI Static RAM GENERAL DESCRIPTION The MTC8251316-150B1 and MTC8251316-200B1 are 512Kbytes static RAM cards in conformity w ith the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.


    OCR Scan     		PDF MTC8251316-150B1 MTC8251316-200B1 512Kbytes 68pins CR2025 I03fj static ram 512K