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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P-|dB = 39 dBm at 5.9 GHz to 6.4 GHz


    OCR Scan     		PDF TIM5964-8L MW50740196 TIM5964-8L

    2Sa1775e

    Abstract: 2sb1423 2SD1379 2SD1189F 2SC3271F 2SB1086A
    Text: Tr Œ 1 ransistors • TO-126, TO-126FP Types Type F u n c tio n T O -1 2 6 F P T O -1 2 6 V cEo V *VcER lr (A ) Pc(W)(Tc = 25’ C) li (A ) T O -1 2 6 ht F T0-126FP V et (V ) Ic ( m A ) 2SB1007 2SB889F -8 0 -0 .7 — 10 5 82 - 390 -3 -1 0 0 2SB1009 2SB891F


    OCR Scan     		PDF O-126, O-126FP 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SB1423 2SB1008 2SB1272 2Sa1775e 2SD1379 2SD1189F 2SC3271F