Untitled
Abstract: No abstract text available
Text: S PC41A1 SP 40KB Sound Controller MAR. 18, 2002 Version 1.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPC41A1
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ndfeb n35
Abstract: N35 magnet N35SH HCJ SMD ndfeb ndfeb* n35sh 100 n35 ndfeb 35 Yx20 t2 955 e
Text: Test Coils For Reed Switches and Sensors Cylindrical Test Coil No. A B C D E Wire Diameter Turns Coil Res. Rectangular Test Coil A mm B mm C mm D mm E mm F mm G mm H mm Wire Diameter mm Turns Coil Resistance 717 102 001 53.3 50.8 7.6 5.6 14.1 0.090
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TCP3002
ndfeb n35
N35 magnet
N35SH
HCJ SMD
ndfeb
ndfeb* n35sh
100 n35
ndfeb 35
Yx20
t2 955 e
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Untitled
Abstract: No abstract text available
Text: InAs Quantum Well Hall Element HQ-0221 Shipped in packet-tape reel 5,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Limit Unit Max. Input Voltage
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HQ-0221
000pcs
Room2321
CA95110
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FDS3601N
Abstract: No abstract text available
Text: FDS3601N 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS3601N
FDS3601N
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MC100LVEL56
Abstract: MC100LVEL56DW MC100LVEL56DWG
Text: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer Description The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to
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MC100LVEL56
MC100LVEL56
MC100LVEL56/D
MC100LVEL56DW
MC100LVEL56DWG
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100LVEL56
Abstract: No abstract text available
Text: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to
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MC100LVEL56
BRD8011/D.
AN1405/D
AN1406/D
AN1503/D
AN1504/D
AN1568/D
AN1642/D
AND8001/D
100LVEL56
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MC100LVEL56
Abstract: MC100LVEL56DW MC100LVEL56DWR2
Text: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to
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MC100LVEL56
MC100LVEL56
MC100LVEL56/D
MC100LVEL56DW
MC100LVEL56DWR2
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Untitled
Abstract: No abstract text available
Text: FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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FDS3601
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i2h4
Abstract: A4N28 824I2 02A31 Z820 2S433 82A8 h826 I214N 01n22
Text: IBM PowerPC Application Note !"#$%!&' *+!'!&,'-./ -""0'1"2$ +,-./-/0&./112.'"331,-4&,/0% 56+'+,-./212-&./0,-% 72%24.-8'9.,40$12':4.;)'<= 33-%#33>#%?,@A?-/A B2.%,/0C'!?* "#$#%&'()'(* !"#$ %&'$ ()*#+(,$ -./0($ 1-./0(2$ #34#55#5$ 6+)7#88)+$ "98$ 9$ 3)5#$ *":7"$ #;94<#8$ ="#
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D8/12
65J59s'
i2h4
A4N28
824I2
02A31
Z820
2S433
82A8
h826
I214N
01n22
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fqb*7N65C
Abstract: FQB7N65CTM
Text: QFET FQB7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB7N65C
FQB7N65C
fqb*7N65C
FQB7N65CTM
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FQA7N65C
Abstract: No abstract text available
Text: QFET FQA7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQA7N65C
FQA7N65C
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Untitled
Abstract: No abstract text available
Text: FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET tm 40V, 6A, 29mΩ Features General Description ̈ Max rDS on = 29mΩ at VGS = 10V These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored
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FDS8949
FDS8949
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Untitled
Abstract: No abstract text available
Text: FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
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FQA32N20C
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FDS8949
Abstract: No abstract text available
Text: FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET tm 40V, 6A, 29mΩ Features General Description Max rDS on = 29mΩ at VGS = 10V These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored
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FDS8949
FDS8949
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J133 mosfet transistor
Abstract: transistor 955 MOTOROLA
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
J133 mosfet transistor
transistor 955 MOTOROLA
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IRGP30B60
Abstract: C-150 IRGP30B60KD-E
Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.
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4388A
IRGP30B60KD-E
O-247AD
O-247AD
IRGP30B60
C-150
IRGP30B60KD-E
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motorola MOSFET 935
Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make
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MRF9002R2/D
MRF9002R2
MRF9002R2
MRF9002R2/D
motorola MOSFET 935
J133 mosfet transistor
transistor 955 MOTOROLA
sps transistor
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J239
Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET
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MRF9002R2/D
MRF9002R2
J239
motorola J122
A113
MRF9002R2
RO4350
mosfet j133
motorola rf Power Transistor
j122 mosfet
J104 MOSFET
J239 mosfet transistor
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Untitled
Abstract: No abstract text available
Text: SM572067574D6UP May 26, 2000 Revision History • May 26, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • January 6, 2000 Modified module length from 133.37mm to 133.35mm.
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SM572067574D6UP
SM572067574D6BP
SM572067574D6UP.
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Untitled
Abstract: No abstract text available
Text: FDS9934C Complementary Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching
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FDS9934C
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MLWS-815
Abstract: MLWS-805 mlwt-955f MLWS-812F Lambda MPU MIL-STD-704D MLW-10 MLWD-815 MLWT-955 mlwf-200
Text: PART II— DC-TO-DC CONVERTERS LAMBDA'S MIL-ENVIRONMENT MLW SERIES HIGH DENSITY, HIGH RELIABILITY MILITARIZED DC-TO-DC CONVERTERS Lambda has introduced many new models to the MLW Series of isolated DC-to-DC converters and filters for military and civilian aerospace applications:
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MLW-1000
MLWF-600
MLW-1000;
MLW-300
MLWF-300
28VDC
MIL-STD-704D
MLWS-600
MLWD-600
MLWS-815
MLWS-805
mlwt-955f
MLWS-812F
Lambda MPU
MLW-10
MLWD-815
MLWT-955
mlwf-200
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70RIA40
Abstract: TO-209AE 2N3094 70RIA60
Text: SbE D IN TER NATIONAL RECTIFIER • 4055455 Q0107G5 1 ■ International Iio r IRectifier Phase Control Thyristors 110 TO 125 AMPS RMS Part number RRM 2N3091 2N3092 2N3093 2N3094 2N3095 2N3096 2N3097 2N3098 2N1909 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2N1916
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Q0107G5
2N1792
2N1793
2N1794
2N1795
2N1796
2N1797
2N1798
2N1799
2N1800
70RIA40
TO-209AE
2N3094
70RIA60
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Untitled
Abstract: No abstract text available
Text: 5& 1.27 TYP _ \ ± _ .050 Z *. i- 3 £• X— DIM "A" ^ r 1 DIM "A" SEE NOTE 3 DIM "B" Is A n i i * t! i (T2 Jp « C 1.27 TYP IE i £•yfy Ou DIM ” C ? oZ0 0,9 REF !|i S ^s lifi • I* = 11.S3 « O-J i^ i B It] 05 @3 .100 3 -ia l .125 s si -^)e o.3 8 (. 015)1
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T60298
278WN/813WN/818VAI
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RETU 3.02
Abstract: OT363 K2280
Text: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)
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BGA425
25-Technology
Q62702-G0058
RETU 3.02
OT363
K2280
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