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    T0240 Search Results

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    T0240 Price and Stock

    KEMET Corporation SBT-0240

    FIXED IND 40UH 500MA 0.034OHM TH
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    DigiKey SBT-0240 Bulk 2,857 1
    • 1 $0.91
    • 10 $0.705
    • 100 $0.5471
    • 1000 $0.42385
    • 10000 $0.38258
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    Mouser Electronics SBT-0240 3,000
    • 1 $0.63
    • 10 $0.459
    • 100 $0.351
    • 1000 $0.343
    • 10000 $0.343
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    Newark SBT-0240 Bulk 10
    • 1 -
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    • 100 $0.454
    • 1000 $0.432
    • 10000 $0.432
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    RS SBT-0240 Bulk 20 Weeks 3,000
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    • 10000 $0.64
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    Avnet Abacus SBT-0240 31 Weeks 3,000
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    SunFounder ST0240

    MINI TRAFFIC LIGHT LED MODULE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ST0240 Bag 19 1
    • 1 $14.52
    • 10 $11.495
    • 100 $9.3773
    • 1000 $8.31861
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    METZ CONNECT USA AST0240504

    ST02405HDNC
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    DigiKey AST0240504 Bulk 5,000
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    Newark AST0240504 Bulk 5,000
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    METZ CONNECT USA AST0240304

    ST02403HDNC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AST0240304 Bulk 5,000
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    Newark AST0240304 Bulk 5,000
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    • 10000 $1.39
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    Samtec Inc IDMD-05-T-02.40

    SLIM BODY DOUBLE-ROW IDC MALE AS
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    DigiKey IDMD-05-T-02.40 Bulk 1
    • 1 $6.06
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    Avnet Americas IDMD-05-T-02.40 Bulk 1
    • 1 $6.06
    • 10 $6.06
    • 100 $4.37
    • 1000 $3.92
    • 10000 $3.92
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    Mouser Electronics IDMD-05-T-02.40
    • 1 $6.06
    • 10 $6.06
    • 100 $4.37
    • 1000 $3.5
    • 10000 $2.98
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    Master Electronics IDMD-05-T-02.40
    • 1 -
    • 10 $7.46
    • 100 $5.79
    • 1000 $3.71
    • 10000 $2.48
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    T0240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DCF1900-T0240

    Abstract: No abstract text available
    Text: DCF Drop-in Isolators & Circulators DCF1900-T0240 2.3 GHz to 2.7 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3 GHz to 2.7 GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)


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    PDF DCF1900-T0240 DCF1900-T0240

    DCF1900-T0240

    Abstract: T0240
    Text: DCF Drop-in Isolators & Circulators DCF1900-T0240 2.3GHz to 2.7GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 2.3GHz to 2.7GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)


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    PDF DCF1900-T0240 DCF1900-T0240 T0240

    Untitled

    Abstract: No abstract text available
    Text: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DCF1900-T0240 2.3 GHz to 2.7 GHz DCF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation


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    PDF DCF1900-T0240

    D-68623

    Abstract: T0240 westcode igbt
    Text: An IXYS Company Provisional Data Data Sheet Issue:- 3  WESTCODE Date:- 1 Dec, 2005 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0240NA45E MAXIMUM LIMITS UNITS 4500 V Collector – emitter voltage VDC link Permanent DC voltage for 100 FIT failure rate.


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    PDF T0240NA45E T0240NA45E D-68623 T0240 westcode igbt

    Untitled

    Abstract: No abstract text available
    Text: Part num ber schem e TO-240AA compatible package PS MT 91 N 16 KNX 1 80 6.2 6 7 21 2 3 20 M5 20 2 3 4 5 6 1 Power Semiconductors initials 2) Circuit designation 3) Series number 4) Designates standard recovery time 5) Voltage Multiplier example: 16 x 100 = 1600 Volts)


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    PDF O-240AA

    Untitled

    Abstract: No abstract text available
    Text: St a n da r d Re cove r y Re ct ifie r P WER Semiconductors Inc. Pa r t # PSM D 2 5 N . . se r ie s I F AVE 2 5 A V RRM 1 2 0 0 V ~ 1 8 0 0 V TO-240AA compatible package Short Form Data Sheet 80 6.2 6 7 Part num ber schem e 2 21 3 20 4 5 1 13 20 PS MD 25 N 12 KNX


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    PDF O-240AA T0-240AA. 125OC.

    press-pack igbt

    Abstract: T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E
    Text: PRODUCT BRIEF d e v o V r Imp nd 4.5k a V s k t 5 e . s 2 chip Press-Pack IGBTs Features and Benefits May 2010 Issue 2 Featuring the improved 2.5kV and 4.5 kV chipsets with typically 25% reduced Vce sat With a track record spanning more than 10 years as a leading


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    PDF D-68623 press-pack igbt T0240NB45E T2400GB45E E0800QC25C E0280YH25C snubber IGCT T1200TB25A westcode igbt IGBT 5kV T1500TB25E

    Halbleiterbauelemente DDR

    Abstract: mikroelektronik Heft 12 VEB mikroelektronik information applikation Mikroelektronik Information Applikation Transistoren DDR information applikation mikroelektronik mikroelektronik Heft sy 710 applikation heft
    Text: m o t ^ o e l e l - c f a n c i r Information Applikation Bauelemente der Leistungs­ elektronik SW77 Bipolare SchaltTransistoren i i l - c m t n r D o lk in î^ e lB l-c ta n a r iik Information Applikation H e f t : BAUELEMENTE DER LEISTUNGSELEKTRONIK


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    Untitled

    Abstract: No abstract text available
    Text: VMK 90-02T2 Dual Power MOSFET Module VDSS Id25 = 200 V “ 83 A ^ D S o n “ 25 m Q Common-Source connected N-Channel Enhancement Mode Sym bol Test C onditions vv DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 6.8 kß 200 V VGS V GSM


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    PDF 90-02T2 O-240

    MCC44-12IO1B

    Abstract: io1B mcc94-22io1b MCC56-08IO8B MCC56-12IO8B MCC95-14IO1B MCC95-12io1B MCC26-14IO1 MCC26 MCC56-16IO1B
    Text: j Thyristor/Thyristor Modules lTAV = 18-116 A Type M CC .io1B v v RRM 1 TAV M CC.io8B p T c ^TRMS *TSM A 45°C 10 ms A V DRM rr "^ VJM ^ th J C Package style thCH per Chip per Chip o z d> V A MCC19-08io1B MCC19-12io1B MCC19-14io1B MCC19-16io1B 800 1200


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    PDF MCC19-08io1B MCC19-12io1B MCC19-14io1B MCC19-16io1B MCC19-08io8B MCC19-12io8B MCC19-14io8B MCC19-16io8B MCC21-14io8B MCC21-16io8B MCC44-12IO1B io1B mcc94-22io1b MCC56-08IO8B MCC56-12IO8B MCC95-14IO1B MCC95-12io1B MCC26-14IO1 MCC26 MCC56-16IO1B

    Untitled

    Abstract: No abstract text available
    Text: s e MIKROn V rsm V rrm Ifrm s Ifa v V Ultrafast Epitaxial Diode Modules maximum value for continuous operation 110 A | (sin. 325 A 1 8 0 ; Tease = 8 5 ° C ; 5 0 4 8 ,5 A Hz) 207 A 100 SKKD 50 E 01 200 SKKD 50 E 02 SKND 50 E 02 SKMD 202 E 02 SKND 202 E 02


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    PDF SKND50E T0-240 SKMD202E SKKD50E SKND202 B2-20

    ior e78996

    Abstract: FK6H350 IR E78996 e78996 india E78996 rectifier module hex-pak IRFK6H350 IRFK6J350 J350
    Text: Bulletin E27112 International B Rectifier IRFK6H350,1RFK6J350 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.


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    PDF E27112 FK6H350 E78996. T0-240 CH-8032 IL60067. NJ07650. FL32743. CA90245. MJW/1/92 ior e78996 IR E78996 e78996 india E78996 rectifier module hex-pak IRFK6H350 IRFK6J350 J350

    14MQ

    Abstract: IRFK4H150 IRFK4J150
    Text: Bulletin E27104 International IxsrIR a tifie r 1RFK4H150,IRFK4J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically isolated Base Plate. Easy Assembly into Eauipment


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    PDF E27104 IRFK4H150 IRFK4J150 E78996. T0-240 14MQ

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


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    PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    Untitled

    Abstract: No abstract text available
    Text: Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol Test Conditions MDD 26 lFRMS = 2 x 60 A ^favm = 2 x 36 A VRRM =800-1800 V TO-240 AA Type MDD 26-08N1 MDD 26-12N1 MDD 26-14N1 MDD 26-16N1 MDD 26-18N1 B B B B B < < Maximum Ratings


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    PDF O-240 26-08N1 26-12N1 26-14N1 26-16N1 26-18N1 4bflb22b

    DIODE 22-35 L

    Abstract: No abstract text available
    Text: □ IXYS Diode Modules MDD ^RSM ^RRM TYP6 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MDD MDD MDD MDD MDD Test Conditions_ ^FRMS ^FAVM TVJ Tc = 92°C; 180° sine Tc = 100°C; 180° sine ^FSM TVJ = 45°C; VR= 0 T Maximum Ratings 100


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    PDF 44-08N1 44-14N1 44-18N1 4bflb22b 00D324b DIODE 22-35 L

    e78996 india

    Abstract: E78996 rectifier module F350 IRFK3D350 IRFK3F350 E2799
    Text: Bulletin E2799 International IïôrI Rectifier IRFK3D350,IRFK3F350 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • H igh C urrent C apability. UL re cognised E 78996. E lectrically Isolated B ase Plate. E asy A s s e m b ly into E quipm ent.


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    PDF E2799 FK3D350 E78996. T0-240 S-162 CH-8032 IL60067. NJ07650. FL32743. CA90245. e78996 india E78996 rectifier module F350 IRFK3D350 IRFK3F350 E2799

    E78996 rectifier module

    Abstract: IRFK2D450 9453B 100-C IRFK2D451 hex-pak
    Text: H E D MflSSMSa INTERNATIONAL □ 0 0 ö cn 4 & I Data Sheet No. PD-9.453B r e c t if ie r T-39-27 INTERNATIONAL. RECTIFIER S \ 1 RECOGNIZED File no E78996 I“R HEXPAK POWER MODULE IRFKSD450 IRFKSD451 Isolated Base Power HEXFET Assembly Half Bridge Configuration


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    PDF T-39-27 E78996 E78996 rectifier module IRFK2D450 9453B 100-C IRFK2D451 hex-pak

    Str W 5754

    Abstract: cny 76 IRFK2D054 Str 5754 L1298 DIODE 76A e78996 india IRFK2F054 60788 772200
    Text: Bulletin E2790 International Iîsr I Rectifier IRFK2D054, IRFK2F054 Isolated B ase Power H E X -p a k A s s e m b ly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.


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    PDF E2790 IRFK2D054, IRFK2F054 E78996. T0-240 10lTlQ fa336 S-162 CH-8032ZURICH. IL60067. Str W 5754 cny 76 IRFK2D054 Str 5754 L1298 DIODE 76A e78996 india IRFK2F054 60788 772200

    diode 0A90

    Abstract: B0937 0A90
    Text: Bulletin 127140 rev. B 09/97 International IS R Rectifier ir k .56, STANDARD DIODES .71 s e r ie s NEW ADD-A-pak Power Modules Features 60 A 80 A • Electrically isolated: DBC base plate ■ 3 50 0 V RMS isolating voltage ■ Standard J E D E C package


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    PDF

    ma 8630

    Abstract: MCC56-14i01 MCC56-14i01 B MCC56-16IO1 MCC56-06IO1 MCD56-04IO8 MCC56-08IO8 B
    Text: 4bE D • 4bflb22fc. 00011fl4 b B I X Y 'T Z S - i y I X Y S CORP n ix Y S Thyristor Modules Thyristor/Diode Modules Vrm VotM V VM V ra V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 Type Version 1 Version 8 Version 6 MCC56-06IO1 MCC56-08IO1 MCC56-12I01


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    PDF 4bflb22fc. 00011fl4 MCC56 MCD56 MCC56-06IO1 MCC56-08IO1 MCC56-12I01 MCC56-14 MCC56-16io1 MCC56-06 ma 8630 MCC56-14i01 MCC56-14i01 B MCD56-04IO8 MCC56-08IO8 B

    diode g1s

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER b5E D • MÛSS4S2 G D l b m 43T ■ INR Bulletin E2790 International [ïq rI R e c tifie r IR F K 2 D 0 5 4 , IR F K 2 F 054 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • High Current Capability.


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    PDF E2790 E78996. T0-240 diode g1s

    463345

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER b5E J> MflSSLfiS DOlbaDS 735 INR Bulletin E27110 International S Rectifier IRFK6H150,IRFK6J150 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.


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    PDF E27110 IRFK6H150 IRFK6J150 E78996. T0-240 463345

    ztuc

    Abstract: MDD26 MDD26-04N1 inverter SM 1600 output 48 V E72873 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1
    Text: 4bE D • MböbEEb DDDlElb H HIXY I X Y S CORP E ilX Y S _ MDD26 Diode Modules iTAV= 2 x 36 A VRRM= 400-1600 V V rsm VflRM Type V V Version 1 500 700 900 1300 1500 1700 400 600 BOO 1200 1400 1600 MDD26-04N1 MDD26-06N1 MDD26-08N1


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    PDF MDD26 MDD26-04N1 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1 ztuc MDD26-04N1 inverter SM 1600 output 48 V E72873 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1