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    T 3866 POWER TRANSISTOR Search Results

    T 3866 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T 3866 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t 3866 mosfet

    Abstract: FDA28N50 failchild MOSFET 3866 s
    Text: UniFETTM FDA28N50 N-Channel MOSFET 500V, 28A, 0.155Ω Features Description • RDS on = 0.122Ω ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology.


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    PDF FDA28N50 FDA28N50 t 3866 mosfet failchild MOSFET 3866 s

    t 3866 power transistor

    Abstract: t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97
    Text: 2N 3866 M ULTI-EM ITTER SILICON PLANAR NPN 97 V H F -U H F O S C ILL A T O R POWER A M P L IF IE R The 2N 3866/B F R 97 is a silicon planar epitaxial NPN transistor in Jedec T O -3 9 metal case. It is designed fo r V H F -U H F class A , B, or C am plifier circuits and oscillator applications.


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    PDF 3866/BFR BFR97 t 3866 power transistor t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97

    2n4427

    Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
    Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.


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    PDF 711Dfl2b 00L3b7fl 2N3866 2N4427 2N3866 711002b 00b3bà 2n4427 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640

    t 3866 power transistor

    Abstract: transistor 3866 s t 3866 transistor transistor 3866
    Text: • bb53131 0031761 b03 H A P X N AflER PHILIPS/DISCRETE 2N3866 2N4427 blE D SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are prim arily intended fo r class-A, B or C amplifiers, frequency m ultiplier and oscillator circuits.


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    PDF bb53131 2N3866 2N4427 t 3866 power transistor transistor 3866 s t 3866 transistor transistor 3866

    BFR90 transistor

    Abstract: 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N3866 2N5032
    Text: f Device Type ^ Pout O u tp u t Power Watts g PE Power Gain dB M in. V cc S upply Voltage V o lts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01


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    PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N5032

    power amplifier IC 4440

    Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
    Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min


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    PDF TQ-60 T0-60 BSX33 2N956 power amplifier IC 4440 BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38

    uhf amplifier design BFR90

    Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
    Text: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01


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    PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91

    BFR99

    Abstract: BC377 UHF UHF Transistors transistor 2n 3839 BFR38 t 3866 transistor 2N956 BFX89 BSX33 uhf amplifier
    Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Noise figure Trans. Freq. Max ratings Polar. Type Main unction Package •c NF (MHz (mA) 1000 le f pg m (mA) (MHz) m 3 3.5 3 800 850 1000 typ 1200


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    PDF BFR38 BSX33 2N956 BFR99 BC377 UHF UHF Transistors transistor 2n 3839 t 3866 transistor BFX89 uhf amplifier

    BFR99

    Abstract: BFR38 BC377 BFR36 BFR99A bfr18 2N3137 2N5109 LH105 t 3866 transistor
    Text: /IT SGS-THOMSON TELECOM AND DATA COMMUNICATIONS * 7# »»lajgraoraotss SMALL SIGNAL TRANSISTORS C haracteristics Max ratings Polar. V CEO V *C (m A) Type P .o, (m W ) *T (M H z) ar d NF (dB) NPN NPN NPN PNP NPN NPN NPN 15 15 15 25 20 30 20 25 50 50 50 200


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    PDF BFY90 2N918 BFX73 BFR99A 2N3137 BFR36 2N5109 LH1056 LH1061 BSX33 BFR99 BFR38 BC377 bfr18 LH105 t 3866 transistor

    rca 40290

    Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
    Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry


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    PDF to-72 1N1183A-1 1190AA D2406F-D2406M* 1N3879-1N3883* D2412F-D2412M* 1N3889-1N3893* D2520F-D2520M* 1N3899-1N3903* 1N3909-1 rca 40290 RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012

    LA 4440 IC

    Abstract: L 4440 ic 4440 3TE445 3TX603 BDY15 BDY16 bd 106 case 603 b bd 3055
    Text: NPN Silicon Power Transistors NPN Silicon Epitaxial Planar Transistors in SOT-9 SO-55 metal case For l.f. driver and output stages and high power switching Type Maximum Ratings Characteristics at Tlimh ~ 25 °C @ VCE = 2 V fc - 0,5 A @ "^case — 25 °C


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    PDF BDY15 LA 4440 IC L 4440 ic 4440 3TE445 3TX603 BDY16 bd 106 case 603 b bd 3055

    MPS3866

    Abstract: transistor 3866 s t 3866 transistor
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor • MPS3866 MRF3866R2 Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel lc = 400 m A H IG H -F R E Q U E N C Y T R A N S IS T O R S


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    PDF MRF3866R2: MPS3866 MRF3866R2 MRF3866R2 transistor 3866 s t 3866 transistor

    BFR38

    Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
    Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022


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    PDF XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a

    transistor rc 3866

    Abstract: transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983
    Text: MPS1983 See MPS901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS3866 D ie S o u rc e S a m e as 2N 3866 The RF Line 1C = 400 m A M A X IM U M RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage


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    PDF MPS1983 MPS901) MPS3866 transistor rc 3866 transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983

    MJ2955 equivalent

    Abstract: MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent
    Text: TRANSISTORS BIPOLAR Direct Commercial Equivalent C atalog N um ber M at. Appli. Polarity Pow er Diss. fT Typ ica l @ 25° c: M Hz Free Air v EBO V v CBO VCEQ V V >C Max hFE Max 5>v c e : V 'C B O at max mA VCB Case style 276-2001 ÏN 1 3 0 4 G s NPN 150m W


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    PDF N1304 150mW 300mA 2SD187 200mW 150mA 2SA221 2SB22/ORN 170mW 2SB22/YEL MJ2955 equivalent MPS3640 equivalent 276-2043 MPS918 equivalent 276-2027 2N3053 equivalent MJE34 pnp 2SB22 2N3055 equivalent 2N3819 equivalent

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


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    PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    BCW23

    Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
    Text: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed


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    PDF ZTX330, ZTX331, BCW20 BCW22 2N3707 2N929 ZTX107 ZTX108 ZTX1I09 BC107 BCW23 BFS98 2N3866 pin diagram 2N4127 BC108

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Text: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


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    PDF 2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690

    2N3866 pin diagram

    Abstract: CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N3866 pin diagram CV7753 2N4429 BFS98 CV7644 ferranti 2N4041 ZT280 CV7371 CV7373

    2N918

    Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
    Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574


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    PDF BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544

    2N5707

    Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
    Text: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C


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    PDF 2N5707 O-128 O-117 O-131 O-129 2N5707 TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041

    transistor rc 3866

    Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It


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    PDF MJW16212 AN1040. transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


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    PDF 302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811

    2N4041

    Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
    Text: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series


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    PDF ZT80-ZT180 100mA Series-ZT180 ZT110-ZT280 CV7373) CV7644) CV7371) CV7372) ZT183. ZT184 2N4041 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80