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    SS125 TRANSISTOR Search Results

    SS125 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SS125 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SS125

    Abstract: ss125 transistor ss125 datasheet BSS125 Q67000-S233 S233 marking Q62702-S021 Q67000-S008 marking "BSs"
    Text: BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 125 600 V 0.1 A 45 Ω TO-92 SS125 Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021


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    PDF SS125 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 SS125 ss125 transistor ss125 datasheet BSS125 Q67000-S233 S233 marking Q62702-S021 Q67000-S008 marking "BSs"

    ss129

    Abstract: SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101
    Text: SIPMOS Small-Signal Transistor BSS 84 ● VDS − 50 V − 0.13 A ● ID ● RDS on 10 Ω ● VGS(th) − 0.8 … − 1.6 V ● P channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 2 3


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    PDF Q62702-S568 E6327: Q67000-S243 E6433: OT-23 ss129 SS100 TRANSISTOR DATASHEET ss110 TRANSISTOR ss100 transistor SS125 q62702-s566 ss110 to-92 ss89 to-92 SS100 TO92 TRANSISTOR ss101

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125


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    PDF Q62702-S021 Q67000-S008 Q67000-S233 SS125 E6288 E6296 E6325

    ss125 transistor

    Abstract: bss125 SS125 Q67000-S008
    Text: SIEMENS BSS125 SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 V Type VDS to BSS 125 600 V 0.1 A Type BSS 125 BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 ^DS(on) 45 Q


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    PDF BSS125 SS125 Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 ss125 transistor bss125 SS125

    ss125 transistor

    Abstract: ss125
    Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92


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    PDF SS125 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 ss125 transistor ss125

    ss125c

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5/us (Max.) Low Saturation Voltage : V c e (sat) = 2.7V (Max.)


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    PDF MG200Q1ZS11 sS125 ss125c

    SSY20

    Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
    Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3


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