sram
Abstract: sram datasheet FT6116 cmos sram S-RAM sram 2k x 8
Text: FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 FT6116 2K X 8 CMOS SRAM FT6116 120 FT6116 150 FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 120 2 FT6116 150(2) FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116
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FT6116
sram
sram datasheet
FT6116
cmos sram
S-RAM
sram 2k x 8
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96182
Abstract: 9715 cy7c136
Text: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor
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CY7C130/131
CY7C140/141
CY7C132/136
CY7C142/146
CY7C13
/CY7C14*
CY7C136
52-Lead
CY7C025-JC
CY7C025-AC
96182
9715
cy7c136
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CY7C136
Abstract: ablestik 84-1LMISR4 Nitto MP 8000
Text: Cypress Semiconductor Qualification Report QTP# 98482 VERSION 1.0 March, 1999 5V Asynchronous Dual Port SRAM - R28 Technology - Fab 2 CY7C130/131/140/141 1K x 8 Dual Port SRAM CY7C132/136/142/146 2K x 8 Dual Port SRAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
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CY7C130/131/140/141
CY7C132/136/142/146
CY7C13
/CY7C14*
CY7C136
52-Lead
CY7C0251-AC
CY7C136
ablestik 84-1LMISR4
Nitto MP 8000
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CY7C136
Abstract: No abstract text available
Text: HD32/42 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 8 Master HD32L 2K x 8 Slave HD42L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns
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HD32/42
HD32L
HD42L
HD32L15J
5HD086
CY7C136
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SOP24
Abstract: PDIP28 U631H16 a9235
Text: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile
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U631H16
U631H16
PDIP28
300mil)
SOP24
PDIP28
a9235
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M48Z02
Abstract: M48Z12 MK48Z02
Text: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT
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M48Z02
M48Z12
M48Z02:
M48Z12:
M48Z02
MK48Z02
600mil
M48Z12
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PCDIP24
Abstract: DS1220 M48Z02 M48Z12 M48Z02 Zeropower
Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
M48Z02/12
DS1220.
600mil
M48Z0ce.
PCDIP24
DS1220
M48Z02
M48Z12
M48Z02 Zeropower
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PDIP24
Abstract: U635H16 A-9215
Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile
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U635H16
U635H16
PDIP24
A-9215
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sram 2k x 8
Abstract: No abstract text available
Text: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
M48Z12
AI01187
sram 2k x 8
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PDIP24
Abstract: U635H16 ZMD AG
Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in
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U635H16
U635H16
D-01109
D-01101
PDIP24
ZMD AG
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Untitled
Abstract: No abstract text available
Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in
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U635H16
U635H16
D-01109
D-01101
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PCDIP24
Abstract: M48Z02 Zeropower DS1220 M48Z02 M48Z12
Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES
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M48Z02
M48Z12
M48Z02:
M48Z12:
PCDIP24
M48Z02/12
DS1220.
600mil
M48Z02
M48Z12
PCDIP24
M48Z02 Zeropower
DS1220
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all stk ic diagram
Abstract: stk all ic data
Text: U630H16PA35 HardStore 2K x 8 nvSRAM Features Description The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to
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U630H16PA35
to125
M3015
PLCC32
U630H16
all stk ic diagram
stk all ic data
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Untitled
Abstract: No abstract text available
Text: HD121/125 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 9 Master HD121L 2K x 9 Slave HD125L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns
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HD121/125
HD121L
HD125L
HD121
HD121;
HD125
HD121L15J
5HD091A
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Untitled
Abstract: No abstract text available
Text: U630H16P HardStore 2K x 8 nvSRAM Features Description ! High-performance CMOS nonvo- The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In
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U630H16P
U630H16P
D-01109
D-01101
U630H16PA35
U630H16
U631H16)
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Untitled
Abstract: No abstract text available
Text: U63716 CapStore 2K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in
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U63716
U63716
D-01109
D-01101
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MT5C1608
Abstract: No abstract text available
Text: M IC R O N 2K SRAM MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible
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MT5C1608
24-Pin
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sram 2k x 8
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE ]> b lllS M T D003440 b4S M IC R O N 2K SRAM IMRN MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE and OE options
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D003440
MT5C1608
24-Pin
sram 2k x 8
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MT5C1608
Abstract: No abstract text available
Text: MICRON SEMICONDU CTOR INC M I C R O N I , L.7E D , • blllSMS 000^330 2bb ■ MRN w SRAM 2K 2K X MT5C1608 X 8 SRAM 8 SRAM • H igh speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low-power, CM OS double-m etal process • Single +5V +10% pow er supply
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MT5C1608
24-Pin
DQDR33fi
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52002HR
Abstract: 52002I IN3064 2k x 8 nvram
Text: 52002 2K BIT 256 x 8 NVRAM 2K Bit Static RAM backed by 2K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Faiiure Protection Unlimited Recall Cycles Memory Margining Capability
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52002HR.
52002HR
52002I
IN3064
2k x 8 nvram
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ms6116
Abstract: F0059 F0228 PAL20S10 MS29673 F0062 "32K x 8" SRAM dil F0057 128K X 8 BIT CMOS SRAM 6 pin DIL And Gate
Text: MICROTECH SEMICONDUCTORS 4SE D | • MICS MICROTECH r- BS9000 Approved product list Memory Part N9 Package style BS Spec. N2 Functional Description MS6116-2 24 PIN DIL BS9400 G0085 2k x 8 SRAM MS29653 18 PIN DIL BS9400 G0112 2k x 4 Power Switched PROM
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00Q0024
BS9000
MS6116-2
MS29653
MS29673
MS29683
MS27C256
MS28C256
HT58128
jxT6832
ms6116
F0059
F0228
PAL20S10
F0062
"32K x 8" SRAM dil
F0057
128K X 8 BIT CMOS SRAM
6 pin DIL And Gate
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Untitled
Abstract: No abstract text available
Text: VITELIC V61C3S FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 DkJAL PORT MEMORY Features Description • 2K x 8 bit C M O S Static RAM with 3-state outputs The Vitelic V61C35 is a CMOS 2K x 8 low-cost dual port SRAM that eliminates on-chip arbitration to fit applications where timing or design makes arbitration
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V61C3S
V61C35
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Untitled
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;
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MB8431/32-90/-90U-90LU-12/-12U-12LL
16K-BIT
MB8431/32
MB8431
MB8432
DIP-52P-M01
MB8431)
374T7Sb
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B8432
Abstract: sram 2k x 8 MB8432
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;
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MB8431/32-90/-90U-90LU-12/-12U-12LL
16K-BIT
MB8431/32
MB8431
MB8432
B8432
sram 2k x 8
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