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    SRAM 2K X 8 Search Results

    SRAM 2K X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy
    27S03ALM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy

    SRAM 2K X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sram

    Abstract: sram datasheet FT6116 cmos sram S-RAM sram 2k x 8
    Text: FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 FT6116 2K X 8 CMOS SRAM FT6116 120 FT6116 150 FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116 120 2 FT6116 150(2) FT6116 2K X 8 CMOS SRAM FT6116 2K X 8 CMOS SRAM FT6116


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    PDF FT6116 sram sram datasheet FT6116 cmos sram S-RAM sram 2k x 8

    96182

    Abstract: 9715 cy7c136
    Text: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor


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    PDF CY7C130/131 CY7C140/141 CY7C132/136 CY7C142/146 CY7C13 /CY7C14* CY7C136 52-Lead CY7C025-JC CY7C025-AC 96182 9715 cy7c136

    CY7C136

    Abstract: ablestik 84-1LMISR4 Nitto MP 8000
    Text: Cypress Semiconductor Qualification Report QTP# 98482 VERSION 1.0 March, 1999 5V Asynchronous Dual Port SRAM - R28 Technology - Fab 2 CY7C130/131/140/141 1K x 8 Dual Port SRAM CY7C132/136/142/146 2K x 8 Dual Port SRAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


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    PDF CY7C130/131/140/141 CY7C132/136/142/146 CY7C13 /CY7C14* CY7C136 52-Lead CY7C0251-AC CY7C136 ablestik 84-1LMISR4 Nitto MP 8000

    CY7C136

    Abstract: No abstract text available
    Text: HD32/42 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 8 Master HD32L 2K x 8 Slave HD42L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns


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    PDF HD32/42 HD32L HD42L HD32L15J 5HD086 CY7C136

    SOP24

    Abstract: PDIP28 U631H16 a9235
    Text: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF U631H16 U631H16 PDIP28 300mil) SOP24 PDIP28 a9235

    M48Z02

    Abstract: M48Z12 MK48Z02
    Text: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATICPOWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: M48Z02 MK48Z02 600mil M48Z12

    PCDIP24

    Abstract: DS1220 M48Z02 M48Z12 M48Z02 Zeropower
    Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 M48Z02/12 DS1220. 600mil M48Z0ce. PCDIP24 DS1220 M48Z02 M48Z12 M48Z02 Zeropower

    PDIP24

    Abstract: U635H16 A-9215
    Text: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile


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    PDF U635H16 U635H16 PDIP24 A-9215

    sram 2k x 8

    Abstract: No abstract text available
    Text: M48Z02 M48Z12 CMOS 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECTand WRITE PROTECTION CHOICE of TWO WRITE PROTECT


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 M48Z12 AI01187 sram 2k x 8

    PDIP24

    Abstract: U635H16 ZMD AG
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


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    PDF U635H16 U635H16 D-01109 D-01101 PDIP24 ZMD AG

    Untitled

    Abstract: No abstract text available
    Text: U635H16 PowerStore 2K x 8 nvSRAM Features Description ! High-performance CMOS non- The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in


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    PDF U635H16 U635H16 D-01109 D-01101

    PCDIP24

    Abstract: M48Z02 Zeropower DS1220 M48Z02 M48Z12
    Text: M48Z02 M48Z12 16Kb 2K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES


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    PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 M48Z02/12 DS1220. 600mil M48Z02 M48Z12 PCDIP24 M48Z02 Zeropower DS1220

    all stk ic diagram

    Abstract: stk all ic data
    Text: U630H16PA35 HardStore 2K x 8 nvSRAM Features Description ‡ The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to


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    PDF U630H16PA35 to125 M3015 PLCC32 U630H16 all stk ic diagram stk all ic data

    Untitled

    Abstract: No abstract text available
    Text: HD121/125 ADP SRAM I o 5 Volt x8 Asynchronous Dual-Port Static RAM Memory Configuration Mode Device 2K x 9 Master HD121L 2K x 9 Slave HD125L Key Features: • • • • • • • • • • • Industry leading asynchronous Dual-Port Static RAM up to 15ns


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    PDF HD121/125 HD121L HD125L HD121 HD121; HD125 HD121L15J 5HD091A

    Untitled

    Abstract: No abstract text available
    Text: U630H16P HardStore 2K x 8 nvSRAM Features Description ! High-performance CMOS nonvo- The U630H16P has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In


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    PDF U630H16P U630H16P D-01109 D-01101 U630H16PA35 U630H16 U631H16)

    Untitled

    Abstract: No abstract text available
    Text: U63716 CapStore 2K x 8 nvSRAM Features Description ! CMOS non- volatile static RAM The U63716 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in


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    PDF U63716 U63716 D-01109 D-01101

    MT5C1608

    Abstract: No abstract text available
    Text: M IC R O N 2K SRAM MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible


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    PDF MT5C1608 24-Pin

    sram 2k x 8

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE ]> b lllS M T D003440 b4S M IC R O N 2K SRAM IMRN MT5C1608 X 8 SRAM 2K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V +10% power supply • Easy memory expansion with CE and OE options


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    PDF D003440 MT5C1608 24-Pin sram 2k x 8

    MT5C1608

    Abstract: No abstract text available
    Text: MICRON SEMICONDU CTOR INC M I C R O N I , L.7E D , • blllSMS 000^330 2bb ■ MRN w SRAM 2K 2K X MT5C1608 X 8 SRAM 8 SRAM • H igh speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low-power, CM OS double-m etal process • Single +5V +10% pow er supply


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    PDF MT5C1608 24-Pin DQDR33fi

    52002HR

    Abstract: 52002I IN3064 2k x 8 nvram
    Text: 52002 2K BIT 256 x 8 NVRAM 2K Bit Static RAM backed by 2K Bit Electrically Erasable PROM Fully 5V Only Operation Directly TTL Compatible In Circuit EEPROM Changes SRAM Cycle Time less than 300 ns Power-Faiiure Protection Unlimited Recall Cycles Memory Margining Capability


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    PDF 52002HR. 52002HR 52002I IN3064 2k x 8 nvram

    ms6116

    Abstract: F0059 F0228 PAL20S10 MS29673 F0062 "32K x 8" SRAM dil F0057 128K X 8 BIT CMOS SRAM 6 pin DIL And Gate
    Text: MICROTECH SEMICONDUCTORS 4SE D | • MICS MICROTECH r-­ BS9000 Approved product list Memory Part N9 Package style BS Spec. N2 Functional Description MS6116-2 24 PIN DIL BS9400 G0085 2k x 8 SRAM MS29653 18 PIN DIL BS9400 G0112 2k x 4 Power Switched PROM


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    PDF 00Q0024 BS9000 MS6116-2 MS29653 MS29673 MS29683 MS27C256 MS28C256 HT58128 jxT6832 ms6116 F0059 F0228 PAL20S10 F0062 "32K x 8" SRAM dil F0057 128K X 8 BIT CMOS SRAM 6 pin DIL And Gate

    Untitled

    Abstract: No abstract text available
    Text: VITELIC V61C3S FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 DkJAL PORT MEMORY Features Description • 2K x 8 bit C M O S Static RAM with 3-state outputs The Vitelic V61C35 is a CMOS 2K x 8 low-cost dual port SRAM that eliminates on-chip arbitration to fit applications where timing or design makes arbitration


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    PDF V61C3S V61C35

    Untitled

    Abstract: No abstract text available
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


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    PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 DIP-52P-M01 MB8431) 374T7Sb

    B8432

    Abstract: sram 2k x 8 MB8432
    Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB8431/32-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL PORT SRAM 2K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujitsu MB8431/32 are 2K words x 8 bits Dual port high-performance-static Random Access Memories SRAMs fabricated in CMOS. The SRAMs use asynchronous circuits;


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    PDF MB8431/32-90/-90U-90LU-12/-12U-12LL 16K-BIT MB8431/32 MB8431 MB8432 B8432 sram 2k x 8