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    SPP03N60S5 Price and Stock

    Infineon Technologies AG SPP03N60S5HKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPP03N60S5XKSA1

    LOW POWER_LEGACY
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    Verical SPP03N60S5XKSA1 30,800 572
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    SPP03N60S5XKSA1 17,130 572
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    SPP03N60S5XKSA1 9,505 572
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    SPP03N60S5XKSA1 2,500 572
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    SPP03N60S5XKSA1 1,500 572
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    SPP03N60S5XKSA1 45 21
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    Arrow Electronics SPP03N60S5XKSA1 45 52 Weeks 1
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    Rochester Electronics SPP03N60S5XKSA1 62,065 1
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    Rochester Electronics LLC SPP03N60S5XKSA1

    MOSFET N-CH 600V 3.2A TO220-3
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    DigiKey SPP03N60S5XKSA1 Tube 495
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    Infineon Technologies AG SPP03N60S5

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    Bristol Electronics SPP03N60S5 2,548
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    Quest Components SPP03N60S5 2,857
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    SPP03N60S5 2,038
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    SPP03N60S5 1,400
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    Others SPP03N60S5

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    Chip 1 Exchange SPP03N60S5 178
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    SPP03N60S5 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP03N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=1.40 ?, 3.2A Original PDF
    SPP03N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPP03N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-220AB Original PDF
    SPP03N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF

    SPP03N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 SPP03N60S5 P-TO220-3-1 P-TO263-3-2 03N60S5 Q67040-S4184 03N60S5 Q67040-S4184 SPB03N60S5

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197

    03N60S5

    Abstract: Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPB03N60S5 SPP03N60S5 P-TO-263-3-2

    SPPX4N60S5

    Abstract: 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 SPPx4N60S5/SPBx4N60S5 Q67040-S4184 03N60S5 SPPX4N60S5 03n60s5 Q67040-S4184 SPB03N60S5 SPP03N60S5

    diode 1538

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5 diode 1538

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5

    03n60s5

    Abstract: No abstract text available
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4184 Q67040-S4197 03n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 P-TO220-3-1 PG-TO220-3-1 SPP03N60S5 PG-TO220-3-1 Q67040-S4184 03N60S5

    03n60s5

    Abstract: TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5
    Text: SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-TO220-3-1 03N60S5 Q67040-S4184 P-TO263-3-2 SPP03N60S5 03n60s5 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 03N60S5 Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 TRANSISTOR SMD MARKING CODE 2A 03N60S5 Q67040-S4184 SPP03N60S5

    03N60S5

    Abstract: P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60
    Text: SPP03N60S5 SPB03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 P-TO263-3-2 P-TO-263-3-2 03N60S5 TO263 TRANSISTOR SMD MARKING CODE 2A Q67040-S4184 SPB03N60S5 SPP03N60S5 diode 1538 03n60

    03N60S5

    Abstract: Q67040-S4184 SPP03N60S5
    Text: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP03N60S5 PG-TO220 P-TO220-3-1 Q67040-S4184 03N60S5 03N60S5 Q67040-S4184 SPP03N60S5

    03n60s5

    Abstract: SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538
    Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original     		PDF SPP03N60S5 SPB03N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4184 03N60S5 Q67040-S4197 03n60s5 SPP03N60S5 Q67040-S4184 SPB03N60S5 P-TO-263-3-1 diode 1538

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    P-TO263-3-2

    Abstract: No abstract text available
    Text: SPB03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB03N60S5 P-TO263-3-2 03N60S5 SPB03N60S5 Q67040-S4197 P-TO263-3-2

    03N60

    Abstract: SPB03N60S5
    Text: SPB03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		PDF SPB03N60S5 PG-TO263 03N60S5 SPB03N60S5 Q67040-S4197 03N60

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    irfp460 dc welding circuit diagram

    Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers


    Original     		PDF AN-CoolMOS-02 Room14J1 Room1101 irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    UPS SIEMENS

    Abstract: SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5
    Text: C o o l M O S TM C 2 COOL & FAST C o o l M O S TM C 2 the second generation www.infineon.com Never stop thinking. C o o l M O S TM C 2 the second generation Infineon’s introduction of the 600V CoolMOSTM C2 technology is a breakthrough design for power conversion systems such as


    Original     		PDF B152-H7641-X-X-7600 UPS SIEMENS SPW17N80C2 500 coolmos SPD01N60S5 SPN01N60S5 A1040 to-252 SPN04N60C2 Infineon CoolMOS SPU01N60S5 SPD02N60S5

    DIODE JS.9 smd

    Abstract: No abstract text available
    Text: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan     		PDF SPP03N60S5 SPB03N60S5 SPPx4N60S5/SPBx4N60S5 P-T0220-3-1 03N60S5 Q67040-S4184 P-T0263-3-2 DIODE JS.9 smd