IRF3205 smd
Abstract: No abstract text available
Text: MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 3.30 ±0.10 TO-220 2.54 ±0.20 ø3.18 ±0.10 0.70 15.80 ±0.20 ● Advanced Process Technology ● Ultra Low On-Resistance (1.00x45°) 15.87 ±0.20 6.68 ±0.20
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IRF3205
O-220
00x45Â
54TYP
IRF3205 smd
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF310 Feafares 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF310
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Abstract: No abstract text available
Text: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRFF130 Features 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF130
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Untitled
Abstract: No abstract text available
Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFF330 Features 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF330
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Abstract: No abstract text available
Text: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF430 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Features • 4.5A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF430
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Abstract: No abstract text available
Text: Product specification IRFML8244TRPbF VDS 25 V VGS Max ± 20 V 24 m 41 m RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET * ' 6 Micro3TM (SOT-23) IRFML8244TRPbF Application(s) •Load/ System Switch Features and Benefits
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IRFML8244TRPbF
OT-23)
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF9150
-100V,
-100V
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irf52 0
Abstract: No abstract text available
Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()
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IRF520
IRF52
O220AB
IRF520
irf52 0
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IRF820
Abstract: irf-82
Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()
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IRF820
IRF82
O220AB
IRF820
irf-82
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transistor irf510
Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark
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IRF510
IRF51
O220AB
IRF510
transistor irf510
IRF510 MOSFET
IRF510 Power Mosfet transistor
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Untitled
Abstract: No abstract text available
Text: IRF9Z22, SiHF9Z22 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.33 Qg (Max.) (nC) 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S The Power MOSFET technology is the key to Vishay’s
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IRF9Z22,
SiHF9Z22
11-Mar-11
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AN609
Abstract: IRF820 SiHF820 90268
Text: IRF820_RC, SiHF820_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF820
SiHF820
AN609,
11-Mar-10
AN609
90268
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4139 temperature
Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139
Text: IRFBC30AS_RC, SiHFBC30AS_RC, IRFBC30AL_RC, SiHFBC30AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC30AS
SiHFBC30AS
IRFBC30AL
SiHFBC30AL
AN609,
20-Apr-10
4139 temperature
9571
AN609
74139
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7905 datasheet
Abstract: IRF540R AN609 IRF540 SiHF540
Text: IRF540_RC, SiHF540_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF540
SiHF540
AN609,
01-Mar-10
7905 datasheet
IRF540R
AN609
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AN609
Abstract: IRF840AL IRF840AS SiHF840AL SiHF840AS
Text: IRF840AS_RC, IRF840AL_RC, SiHF840AS_RC, SiHF840AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRF840AS
IRF840AL
SiHF840AS
SiHF840AL
AN609,
18-Mar-10
AN609
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AN609
Abstract: IRF740S SiHF740S
Text: IRF740S_RC, SiHF740S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF740S
SiHF740S
AN609,
11-Mar-10
AN609
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SiHFBC30L
Abstract: 5611/M 90430 AN609 IRFBC30L IRFBC30S SiHFBC30S
Text: IRFBC30S_RC, SiHFBC30S_RC, IRFBC30L_RC, SiHFBC30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC30S
SiHFBC30S
IRFBC30L
SiHFBC30L
AN609,
20-Apr-10
5611/M
90430
AN609
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SiHF9Z24S
Abstract: AN609 IRF9Z24L IRF9Z24S
Text: IRF9Z24S_RC, IRF9Z24L_RC, SiHF9Z24S_RC, SiHF9Z24L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRF9Z24S
IRF9Z24L
SiHF9Z24S
SiHF9Z24L
AN609,
29-Mar-10
AN609
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AN609
Abstract: IRF9530
Text: IRF9530_RC, SiHF9530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF9530
SiHF9530
AN609,
18-Mar-10
AN609
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IRFI640G
Abstract: IRFI640G_RC, SiHFI640G_RC transistor c 6093 IRFI640 SIHFI640G AN609 90446
Text: IRFI640G_RC, SiHFI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFI640G
SiHFI640G
AN609,
06-May-10
IRFI640G_RC, SiHFI640G_RC
transistor c 6093
IRFI640
AN609
90446
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AN609
Abstract: IRF9610 SiHF9610
Text: IRF9610_RC, SiHF9610_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF9610
SiHF9610
AN609,
18-Mar-10
AN609
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Untitled
Abstract: No abstract text available
Text: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP140
O-247
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Untitled
Abstract: No abstract text available
Text: IRFP240 Semiconductor Data Sheet July 1999 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP240
O-247
180i2
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Untitled
Abstract: No abstract text available
Text: IRF520 Semiconductor D ata S h eet June 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET • 9.2A, 100V Ordering Information • SOA is Power Dissipation Limited • Single Pulse Avalanche Energy Rated • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRF520
O-220AB
TB334
TA09594.
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